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Spintronics: Magnetoresistance and Spinterface of Organic Spin Valves Based on Diketopyrrolopyrrole Polymers (Adv. Electron. Mater. 12/2019).
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201970065
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- Article
Display Technology: Plasmon‐Enhanced InGaZnO Ultraviolet Photodetectors Tuned by Ferroelectric HfZrO (Adv. Electron. Mater. 12/2019).
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201970064
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Stretchable Electronics: Omnidirectional Strain‐Independent Organic Transistors Integrated onto an Elastomer Template with a Spontaneously Formed Fingerprint‐Mimicking Microtopography (Adv. Electron. Mater. 12/2019).
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201970062
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Masthead: (Adv. Electron. Mater. 12/2019).
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201970063
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- Article
Neuromorphic Computing: A Fully Printed Flexible MoS<sub>2</sub> Memristive Artificial Synapse with Femtojoule Switching Energy (Adv. Electron. Mater. 12/2019).
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900740
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Additional Organic‐Solvent‐Rinsing Process to Enhance Perovskite Photovoltaic Performance.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201901062
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Thickness‐Dependent Electronic Transport in Ultrathin, Single Crystalline Silicon Nanomembranes.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900917
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High‐Performance All‐Inorganic Perovskite‐Quantum‐Dot‐Based Flexible Organic Phototransistor Memory with Architecture Design.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900864
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Electrochemical Performance of Manganese Coordinated Polyaniline.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900816
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Biaxial Strain‐Mediated Room Temperature Ferromagnetism of ReS<sub>2</sub> Web Buckles.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900814
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Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O<sub>2</sub> Plasma Treatment.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900768
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Strain Improving the Performance of a Flexible Monolayer MoS<sub>2</sub> Photodetector.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900803
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Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900744
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Thermo‐Phototronic‐Effect‐Enhanced Photodetectors Based on Porous ZnO Materials.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900776
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- Article
Ballistic Quantum Transport of Sub‐10 nm 2D Sb<sub>2</sub>Te<sub>2</sub>Se Transistors.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900813
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A Fully Printed Flexible MoS<sub>2</sub> Memristive Artificial Synapse with Femtojoule Switching Energy.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900740
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- Article
Ultrabroadband, Large Sensitivity Position Sensitivity Detector Based on a Bi<sub>2</sub>Te<sub>2.7</sub>Se<sub>0.3</sub>/Si Heterojunction and Its Performance Improvement by Pyro‐Phototronic Effect.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900786
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- Article
Advanced Multifunctional Field Effect Devices Using Common Gate for Both 2D Transition‐Metal Dichalcogenide and InGaZnO Channels.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900730
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Sunlight‐Triggerable Transient Energy Harvester and Sensors Based on Triboelectric Nanogenerator Using Acid‐Sensitive Poly(phthalaldehyde).
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900725
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A Robust 2D Photo‐Electrochemical Detector Based on NiPS<sub>3</sub> Flakes.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900726
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Compressible All‐In‐One Supercapacitor with Adjustable Output Voltage Based on Polypyrrole‐Coated Melamine Foam.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900724
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Material and Thickness Investigation in Ferromagnet/Ta/CoFeB Trilayers for Enhancement of Spin–Orbit Torque and Field‐Free Switching.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900598
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Perspectives of Unicolored Phosphor‐Sensitized Fluorescence.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900646
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- Article
Ultrathin PEDOT:PSS/rGO Aerogel Providing Tape‐Like Self‐Healable Electrode for Sensing Space Electric Field with Electrochemical Mechanism.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900637
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Comprehensive Investigation on the Thermoelectric Properties of p‐Type PbTe‐PbSe‐PbS Alloys.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900609
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In Situ Nanostructural Analysis of Volatile Threshold Switching and Non‐Volatile Bipolar Resistive Switching in Mixed‐Phased a‐VO<sub>x</sub> Asymmetric Crossbars.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900605
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Edge Effect on the Population of Free Carriers and Excitons in Single‐Crystal CH3NH3PbBr3 Perovskite Nanomaterials.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900718
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A Multilayer‐Graphene/Silicon Infrared Schottky Photo‐Diode.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900594
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- Article
Plasmon‐Enhanced InGaZnO Ultraviolet Photodetectors Tuned by Ferroelectric HfZrO.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900588
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- Article
High‐Performance Proximity Sensors with Nanogroove‐Template‐Enhanced Extended‐Gate Field‐Effect Transistor Configuration.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900586
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Flexible and Stretchable Self‐Powered Multi‐Sensors Based on the N‐Type Thermoelectric Response of Polyurethane/Na<sub>x</sub>(Ni‐ett)<sub>n</sub> Composites.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900582
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Insulating Property Improvement of Polyimide in Devices by Low‐Temperature Supercritical Fluids.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900580
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Electrically Stable Organic Permeable Base Transistors for Display Applications.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900576
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Machine Learning for Understanding the Relationship between the Charge Transport Mobility and Electronic Energy Levels for n‐Type Organic Field‐Effect Transistors.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900573
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Emerging High Coercivity and Huge Exchange Bias Effect in Single Phased Mn<sub>1−</sub><sub>x</sub>Ru<sub>x</sub>Co<sub>2</sub>O<sub>4</sub> Compounds.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900572
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A Study on the Relationship Between Grain Size and Electrical Properties in (K,Na)NbO<sub>3</sub>‐Based Lead‐Free Piezoelectric Ceramics.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900570
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- Article
Solution Processed AlInO/In<sub>2</sub>O<sub>3</sub> Heterostructure Channel Thin Film Transistor with Enhanced Performance.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900550
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- Article
Low‐Voltage Operation of Ring Oscillators Based on Room‐Temperature‐Deposited Amorphous Zinc‐Tin‐Oxide Channel MESFETs.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900548
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- Article
MXene‐Reduced Graphene Oxide Aerogel for Aqueous Zinc‐Ion Hybrid Supercapacitor with Ultralong Cycle Life.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900537
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All‐Oxide Thin Film Transistors and Rectifiers Enabling On‐Chip Capacitive Energy Storage.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900531
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- Article
Hybrid Supercapacitors Based on Interwoven CoO‐NiO‐ZnO Nanowires and Porous Graphene Hydrogel Electrodes with Safe Aqueous Electrolyte for High Supercapacitance.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900397
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Tribo‐Tunneling DC Generator with Carbon Aerogel/Silicon Multi‐Nanocontacts.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900464
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Exploiting the Novel Electronic and Magnetic Structure of C<sub>3</sub>N via Functionalization and Conformation.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900459
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Application of Perovskite‐Structured Materials in Field‐Effect Transistors.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900444
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- Article
Omnidirectional Strain‐Independent Organic Transistors Integrated onto an Elastomer Template with a Spontaneously Formed Fingerprint‐Mimicking Microtopography.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900441
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- Publication type:
- Article
Apparent Piezo‐Photocurrent Modulation in Methylammonium Lead Iodide Perovskite Photodetectors.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900518
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Biomimetic and Radially Symmetric Graphene Aerogel for Flexible Electronics.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900353
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- Article
Spin‐Momentum Locking in the Gate Tunable Topological Insulator BiSbTeSe<sub>2</sub> in Non‐Local Transport Measurements.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900334
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- Article
Magnetoresistance and Spinterface of Organic Spin Valves Based on Diketopyrrolopyrrole Polymers.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900318
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- Publication type:
- Article
On the Origin of the Large Remanent Polarization in La:HfO<sub>2</sub>.
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- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900303
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- Article