Works matching IS 21967350 AND DT 2025 AND VI 12 AND IP 2

Results: 11

Progresses and Frontiers in Ultrawide Bandgap Semiconductors.

Published in:

Advanced Materials Interfaces, 2025, v. 12, n. 2, p. 1, doi. 10.1002/admi.202400993

By:

Li, Xiaohang;
Rajan, Siddharth

Publication type:

Article

First‐Principles Study of Twin Boundaries and Stacking Faults in β‐Ga2O3.

Published in:

Advanced Materials Interfaces, 2025, v. 12, n. 2, p. 1, doi. 10.1002/admi.202300318

By:

Wang, Mengen;
Mu, Sai;
Speck, James S.;
Van de Walle, Chris G.

Publication type:

Article

Laser Writing of GaN/Ga2O3 Heterojunction Photodetector Arrays.

Published in:

Advanced Materials Interfaces, 2025, v. 12, n. 2, p. 1, doi. 10.1002/admi.202300371

By:

Sun, Pengxiang;
Yang, Xun;
Li, Kexue;
Wei, Zhipeng;
Fan, Wei;
Wang, Shaoyi;
Zhou, Weimin;
Shan, Chongxin

Publication type:

Article

Issue Information.

Published in:: Advanced Materials Interfaces, 2025, v. 12, n. 2, p. 1, doi. 10.1002/admi.202570006
Publication type:: Article

Solid‐Solution Limits and Thorough Characterization of Bulk β‐(AlxGa1‐x)2O Single Crystals Grown by the Czochralski Method (Adv. Mater. Interfaces 2/2025).

Published in:

Advanced Materials Interfaces, 2025, v. 12, n. 2, p. 1, doi. 10.1002/admi.202400122

By:

Galazka, Zbigniew;
Fiedler, Andreas;
Popp, Andreas;
Seyidov, Palvan;
Anooz, Saud Bin;
Blukis, Roberts;
Rehm, Jana;
Tetzner, Kornelius;
Pietsch, Mike;
Dittmar, Andrea;
Ganschow, Steffen;
Akhtar, Arub;
Remmele, Thilo;
Albrecht, Martin;
Schulz, Tobias;
Chou, Ta‐Shun;
Kwasniewski, Albert;
Suendermann, Manuela;
Schroeder, Thomas;
Bickermann, Matthias

Publication type:

Article

Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral Overgrowth.

Published in:

Advanced Materials Interfaces, 2025, v. 12, n. 2, p. 1, doi. 10.1002/admi.202300394

By:

Polyakov, Alexander;
Lee, In‐Hwan;
Nikolaev, Vladimir;
Pechnikov, Aleksei;
Miakonkikh, Andrew;
Scheglov, Mikhail;
Yakimov, Eugene;
Chikiryaka, Andrei;
Vasilev, Anton;
Kochkova, Anastasia;
Shchemerov, Ivan;
Chernykh, Alexey;
Pearton, Stephen

Publication type:

Article

Solid‐Solution Limits and Thorough Characterization of Bulk β‐(AlxGa1‐x)2O Single Crystals Grown by the Czochralski Method.

Published in:

Advanced Materials Interfaces, 2025, v. 12, n. 2, p. 1, doi. 10.1002/admi.202400122

By:

Galazka, Zbigniew;
Fiedler, Andreas;
Popp, Andreas;
Seyidov, Palvan;
Anooz, Saud Bin;
Blukis, Roberts;
Rehm, Jana;
Tetzner, Kornelius;
Pietsch, Mike;
Dittmar, Andrea;
Ganschow, Steffen;
Akhtar, Arub;
Remmele, Thilo;
Albrecht, Martin;
Schulz, Tobias;
Chou, Ta‐Shun;
Kwasniewski, Albert;
Suendermann, Manuela;
Schroeder, Thomas;
Bickermann, Matthias

Publication type:

Article

Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors.

Published in:

Advanced Materials Interfaces, 2025, v. 12, n. 2, p. 1, doi. 10.1002/admi.202400639

By:

Ghandiparsi, Soroush;
Chatterjee, Bikram;
Shen, Jimmy‐Xuan;
Gottlieb, Miranda S.;
Frye, Clint D.;
Schneider, Joseph D.;
Muir, Ryan D.;
Buckley, Brandon W.;
Harrison, Sara E.;
Shao, Qinghui;
Varley, Joel B.;
Voss, Lars F.

Publication type:

Article

Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts.

Published in:

Advanced Materials Interfaces, 2025, v. 12, n. 2, p. 1, doi. 10.1002/admi.202301080

By:

Klein, Brianna;
Allerman, Andrew;
Armstrong, Andrew;
Rosprim, Mary;
Tyznik, Colin;
Zhu, Yinxuan;
Joishi, Chandan;
Chae, Chris;
Rajan, Siddharth

Publication type:

Article

Microscopic and Spectroscopic Investigation of (AlxGa1–X)2O3 Films: Unraveling the Impact of Growth Orientation and Aluminum Content.

Published in:

Advanced Materials Interfaces, 2025, v. 12, n. 2, p. 1, doi. 10.1002/admi.202301016

By:

Sarker, Jith;
Garg, Prachi;
Rauf, Abrar;
Nirjhar, Ahsiur Rahman;
Huang, Hsien‐Lien;
Zhu, Menglin;
Bhuiyan, A. F. M. Anhar Uddin;
Meng, Lingyu;
Zhao, Hongping;
Hwang, Jinwoo;
Osei‐Agyemang, Eric;
Ahmed, Saquib;
Mazumder, Baishakhi

Publication type:

Article

Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate.

Published in:

2025

By:

Zhao, Xuanyi;
Wang, Shouzhi;
Liu, Lei;
Li, Qiubo;
Yu, Jiaoxian;
Wang, Guodong;
Liang, Chang;
Wang, Zhongxin;
Hao, Han;
Xu, Xiangang;
Zhang, Lei

Publication type:

Literature Review

Works matching IS 21967350 AND DT 2025 AND VI 12 AND IP 2

Progresses and Frontiers in Ultrawide Bandgap Semiconductors.

First‐Principles Study of Twin Boundaries and Stacking Faults in β‐Ga<sub>2</sub>O<sub>3</sub>.

Laser Writing of GaN/Ga<sub>2</sub>O<sub>3</sub> Heterojunction Photodetector Arrays.

Issue Information.

Solid‐Solution Limits and Thorough Characterization of Bulk β‐(Al<sub>x</sub>Ga<sub>1‐x</sub>)<sub>2</sub>O Single Crystals Grown by the Czochralski Method (Adv. Mater. Interfaces 2/2025).

Properties of κ‐Ga<sub>2</sub>O<sub>3</sub> Prepared by Epitaxial Lateral Overgrowth.

Solid‐Solution Limits and Thorough Characterization of Bulk β‐(Al<sub>x</sub>Ga<sub>1‐x</sub>)<sub>2</sub>O Single Crystals Grown by the Czochralski Method.

Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors.

Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts.

Microscopic and Spectroscopic Investigation of (AlxGa1–X)2O3 Films: Unraveling the Impact of Growth Orientation and Aluminum Content.

Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate.