Works matching IS 21967350 AND DT 2025 AND VI 12 AND IP 2

Results: 11

Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral Overgrowth.
Published in:
Advanced Materials Interfaces, 2025, v. 12, n. 2, p. 1, doi. 10.1002/admi.202300394
By:
- Polyakov, Alexander;
- Lee, In‐Hwan;
- Nikolaev, Vladimir;
- Pechnikov, Aleksei;
- Miakonkikh, Andrew;
- Scheglov, Mikhail;
- Yakimov, Eugene;
- Chikiryaka, Andrei;
- Vasilev, Anton;
- Kochkova, Anastasia;
- Shchemerov, Ivan;
- Chernykh, Alexey;
- Pearton, Stephen
Publication type:
Article
First‐Principles Study of Twin Boundaries and Stacking Faults in β‐Ga2O3.
Published in:
Advanced Materials Interfaces, 2025, v. 12, n. 2, p. 1, doi. 10.1002/admi.202300318
By:
- Wang, Mengen;
- Mu, Sai;
- Speck, James S.;
- Van de Walle, Chris G.
Publication type:
Article
Laser Writing of GaN/Ga2O3 Heterojunction Photodetector Arrays.
Published in:
Advanced Materials Interfaces, 2025, v. 12, n. 2, p. 1, doi. 10.1002/admi.202300371
By:
- Sun, Pengxiang;
- Yang, Xun;
- Li, Kexue;
- Wei, Zhipeng;
- Fan, Wei;
- Wang, Shaoyi;
- Zhou, Weimin;
- Shan, Chongxin
Publication type:
Article
Issue Information.
Published in:
Advanced Materials Interfaces, 2025, v. 12, n. 2, p. 1, doi. 10.1002/admi.202570006
Publication type:
Article
Solid‐Solution Limits and Thorough Characterization of Bulk β‐(AlxGa1‐x)2O Single Crystals Grown by the Czochralski Method (Adv. Mater. Interfaces 2/2025).
Published in:
Advanced Materials Interfaces, 2025, v. 12, n. 2, p. 1, doi. 10.1002/admi.202400122
By:
- Galazka, Zbigniew;
- Fiedler, Andreas;
- Popp, Andreas;
- Seyidov, Palvan;
- Anooz, Saud Bin;
- Blukis, Roberts;
- Rehm, Jana;
- Tetzner, Kornelius;
- Pietsch, Mike;
- Dittmar, Andrea;
- Ganschow, Steffen;
- Akhtar, Arub;
- Remmele, Thilo;
- Albrecht, Martin;
- Schulz, Tobias;
- Chou, Ta‐Shun;
- Kwasniewski, Albert;
- Suendermann, Manuela;
- Schroeder, Thomas;
- Bickermann, Matthias
Publication type:
Article
Progresses and Frontiers in Ultrawide Bandgap Semiconductors.
Published in:
Advanced Materials Interfaces, 2025, v. 12, n. 2, p. 1, doi. 10.1002/admi.202400993
By:
- Li, Xiaohang;
- Rajan, Siddharth
Publication type:
Article
Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors.
Published in:
Advanced Materials Interfaces, 2025, v. 12, n. 2, p. 1, doi. 10.1002/admi.202400639
By:
- Ghandiparsi, Soroush;
- Chatterjee, Bikram;
- Shen, Jimmy‐Xuan;
- Gottlieb, Miranda S.;
- Frye, Clint D.;
- Schneider, Joseph D.;
- Muir, Ryan D.;
- Buckley, Brandon W.;
- Harrison, Sara E.;
- Shao, Qinghui;
- Varley, Joel B.;
- Voss, Lars F.
Publication type:
Article
Solid‐Solution Limits and Thorough Characterization of Bulk β‐(AlxGa1‐x)2O Single Crystals Grown by the Czochralski Method.
Published in:
Advanced Materials Interfaces, 2025, v. 12, n. 2, p. 1, doi. 10.1002/admi.202400122
By:
- Galazka, Zbigniew;
- Fiedler, Andreas;
- Popp, Andreas;
- Seyidov, Palvan;
- Anooz, Saud Bin;
- Blukis, Roberts;
- Rehm, Jana;
- Tetzner, Kornelius;
- Pietsch, Mike;
- Dittmar, Andrea;
- Ganschow, Steffen;
- Akhtar, Arub;
- Remmele, Thilo;
- Albrecht, Martin;
- Schulz, Tobias;
- Chou, Ta‐Shun;
- Kwasniewski, Albert;
- Suendermann, Manuela;
- Schroeder, Thomas;
- Bickermann, Matthias
Publication type:
Article
Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts.
Published in:
Advanced Materials Interfaces, 2025, v. 12, n. 2, p. 1, doi. 10.1002/admi.202301080
By:
- Klein, Brianna;
- Allerman, Andrew;
- Armstrong, Andrew;
- Rosprim, Mary;
- Tyznik, Colin;
- Zhu, Yinxuan;
- Joishi, Chandan;
- Chae, Chris;
- Rajan, Siddharth
Publication type:
Article
Microscopic and Spectroscopic Investigation of (AlxGa1–X)2O3 Films: Unraveling the Impact of Growth Orientation and Aluminum Content.
Published in:
Advanced Materials Interfaces, 2025, v. 12, n. 2, p. 1, doi. 10.1002/admi.202301016
By:
- Sarker, Jith;
- Garg, Prachi;
- Rauf, Abrar;
- Nirjhar, Ahsiur Rahman;
- Huang, Hsien‐Lien;
- Zhu, Menglin;
- Bhuiyan, A. F. M. Anhar Uddin;
- Meng, Lingyu;
- Zhao, Hongping;
- Hwang, Jinwoo;
- Osei‐Agyemang, Eric;
- Ahmed, Saquib;
- Mazumder, Baishakhi
Publication type:
Article
Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate.
Published in:
Advanced Materials Interfaces, 2025, v. 12, n. 2, p. 1, doi. 10.1002/admi.202301032
By:
- Zhao, Xuanyi;
- Wang, Shouzhi;
- Liu, Lei;
- Li, Qiubo;
- Yu, Jiaoxian;
- Wang, Guodong;
- Liang, Chang;
- Wang, Zhongxin;
- Hao, Han;
- Xu, Xiangang;
- Zhang, Lei
Publication type:
Article

Works matching IS 21967350 AND DT 2025 AND VI 12 AND IP 2

Properties of κ‐Ga<sub>2</sub>O<sub>3</sub> Prepared by Epitaxial Lateral Overgrowth.

First‐Principles Study of Twin Boundaries and Stacking Faults in β‐Ga<sub>2</sub>O<sub>3</sub>.

Laser Writing of GaN/Ga<sub>2</sub>O<sub>3</sub> Heterojunction Photodetector Arrays.

Issue Information.

Solid‐Solution Limits and Thorough Characterization of Bulk β‐(Al<sub>x</sub>Ga<sub>1‐x</sub>)<sub>2</sub>O Single Crystals Grown by the Czochralski Method (Adv. Mater. Interfaces 2/2025).

Progresses and Frontiers in Ultrawide Bandgap Semiconductors.

Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors.

Solid‐Solution Limits and Thorough Characterization of Bulk β‐(Al<sub>x</sub>Ga<sub>1‐x</sub>)<sub>2</sub>O Single Crystals Grown by the Czochralski Method.

Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts.

Microscopic and Spectroscopic Investigation of (AlxGa1–X)2O3 Films: Unraveling the Impact of Growth Orientation and Aluminum Content.

Advance Chemical Mechanical Polishing Technique for Gallium Nitride Substrate.