Strain-Engineered Nonlinear Hall Effect in HgTe.
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- SPIN (2010-3247), 2019, v. 9, n. 4, p. N.PAG, doi. 10.1142/S2010324719400174
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Works matching IS 20103247 AND DT 2019 AND VI 9 AND IP 4
Results: 7
1
2
Quantum Spin Hall Insulators in Tin Films: Beyond Stanene.
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- SPIN (2010-3247), 2019, v. 9, n. 4, p. N.PAG, doi. 10.1142/S2010324719400125
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- Article
3
Author Index Volume 9 (2019).
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- SPIN (2010-3247), 2019, v. 9, n. 4, p. N.PAG, doi. 10.1142/S2010324719990017
- Publication type:
- Article
4
Confinement Effect Driven Quantum Spin Hall Effect in Monolayer AuTe<sub>2</sub>Cl.
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- SPIN (2010-3247), 2019, v. 9, n. 4, p. N.PAG, doi. 10.1142/S2010324719400149
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- Article
5
The Road to High-Temperature Quantum Anomalous Hall Effect in Magnetic Topological Insulators.
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- SPIN (2010-3247), 2019, v. 9, n. 4, p. N.PAG, doi. 10.1142/S2010324719400162
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- Article
6
Topological Surface Dirac Fermion in BiTeCl-Based Heterostructures.
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- SPIN (2010-3247), 2019, v. 9, n. 4, p. N.PAG, doi. 10.1142/S2010324719400150
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- Article
7
Generation of Spin Currents by Magnetic Field in 𝒯- and 𝒫-Broken Materials.
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- SPIN (2010-3247), 2019, v. 9, n. 4, p. N.PAG, doi. 10.1142/S2010324719400137
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- Publication type:
- Article