VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY IN SPINTRONIC DEVICES.
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- SPIN (2010-3247), 2012, v. 2, n. 3, p. -1, doi. 10.1142/S2010324712400024
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- Publication type:
- Article
Works matching IS 20103247 AND DT 2012 AND VI 2 AND IP 3
Results: 10
1
2
WRITE ERROR RATE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY.
- Published in:
- SPIN (2010-3247), 2012, v. 2, n. 3, p. -1, doi. 10.1142/S2010324712400012
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- Publication type:
- Article
3
VOLTAGE CONTROL OF MAGNETISM IN MULTIFERROIC HETEROSTRUCTURES AND DEVICES.
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- SPIN (2010-3247), 2012, v. 2, n. 3, p. -1, doi. 10.1142/S2010324712400048
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- Publication type:
- Article
4
VOLTAGE DRIVEN NONDESTRUCTIVE SELF-REFERENCE SENSING FOR STT-RAM YIELD ENHANCEMENT.
- Published in:
- SPIN (2010-3247), 2012, v. 2, n. 3, p. -1, doi. 10.1142/S2010324712400085
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- Publication type:
- Article
5
RADIO FREQUENCY MAGNETIZATION NONVOLATILITY.
- Published in:
- SPIN (2010-3247), 2012, v. 2, n. 3, p. -1, doi. 10.1142/S2010324712400097
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- Publication type:
- Article
6
DESIGN OF SPIN WAVE FUNCTIONS-BASED LOGIC CIRCUITS.
- Published in:
- SPIN (2010-3247), 2012, v. 2, n. 3, p. -1, doi. 10.1142/S2010324712400061
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- Publication type:
- Article
7
RECENT PROGRESS OF PERPENDICULAR ANISOTROPY MAGNETIC TUNNEL JUNCTIONS FOR NONVOLATILE VLSI.
- Published in:
- SPIN (2010-3247), 2012, v. 2, n. 3, p. -1, doi. 10.1142/S2010324712400036
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- Publication type:
- Article
8
STT-RAM CELL DESIGN CONSIDERING MTJ ASYMMETRIC SWITCHING.
- Published in:
- SPIN (2010-3247), 2012, v. 2, n. 3, p. -1, doi. 10.1142/S2010324712400073
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- Publication type:
- Article
9
PROGRESS ON MAXIMIZING OUTPUT POWER IN SPIN TRANSFER NANO-OSCILLATORS.
- Published in:
- SPIN (2010-3247), 2012, v. 2, n. 3, p. -1, doi. 10.1142/S201032471240005X
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- Publication type:
- Article
10
GUEST EDITORIAL - RECENT PROGRESS IN SPINTRONIC DEVICES.
- Published in:
- SPIN (2010-3247), 2012, v. 2, n. 3, p. -1, doi. 10.1142/S2010324712020018
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- Publication type:
- Article