Works matching IS 19516355 AND DT 2025 AND VI 234 AND IP 2

Results: 17

Ultra-wide-bandgap semiconductors: opportunities and challenges.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 225, doi. 10.1140/epjs/s11734-025-01528-9

By:

Zheng, Wei;
Guo, Daoyou;
Yuan, Ye

Publication type:

Article

AlGaN-based self-powered solar-blind UV photodetectors with Ni/Au electrodes.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 369, doi. 10.1140/epjs/s11734-025-01488-0

By:

Lin, Tingting;
Liu, Liwei;
Liu, Xinguo;
Liu, Chengyu;
Zhou, Changjian;
Wang, Wenliang

Publication type:

Article

β-Ga2O3 extreme ultraviolet photodetectors.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 303, doi. 10.1140/epjs/s11734-025-01487-1

By:

Zhang, Naiji;
Wang, Zhao;
Lin, Zhuogeng;
Zhu, Siqi;
Cai, Wei;
Zhang, Lixin;
Zhang, Xin;
Rong, Muqi;
Zhang, Xiaoshi;
Chen, Duanyang;
Qi, Hongji;
Zheng, Wei

Publication type:

Article

Growth of gallium oxide bulk crystals: a review.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 231, doi. 10.1140/epjs/s11734-025-01486-2

By:

Huang, Lin;
Tang, Huili;
Zhang, Chaoyi;
Sun, Peng;
Fang, Qiancheng;
Wu, Feng;
Luo, Ping;
Liu, Bo;
Xu, Jun

Publication type:

Article

Epitaxial lateral overgrowth of ε-Ga2O3 by metal–organic chemical vapor deposition.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 273, doi. 10.1140/epjs/s11734-025-01485-3

By:

Luo, Tiecheng;
Chen, Xifu;
Yang, Zhuo;
Chen, Weiqu;
Huang, Chenhong;
Luo, Hongtai;
Pei, Yanli;
Lu, Xing;
Wang, Gang;
Chen, Zimin

Publication type:

Article

Investigating effect of sapphire miscut angle on UVC-LED performance with single-crystalline AlN/sapphire templates.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 363, doi. 10.1140/epjs/s11734-024-01460-4

By:

Wen, Nianfei;
Yuan, Ye;
Cai, Tianren;
Lu, Tongxin;
Li, Tai;
Li, Jiahui;
Zhao, Jiale;
Yin, Hengyi;
Cao, Jiakang;
Liu, Shuai;
Feng, Yulin;
Liu, Yuan;
Zheng, Xiantong

Publication type:

Article

Impact of contact properties on the performance of β-Ga2O3 solar-blind photodetector.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 319, doi. 10.1140/epjs/s11734-024-01459-x

By:

Dong, Yu-Song;
Liang, Ming-Xuan;
Qian, Ling-Xuan

Publication type:

Article

Progress in first-principles studies on doped semiconductor diamond.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 385, doi. 10.1140/epjs/s11734-024-01458-y

By:

Wang, Zhen;
Jin, Peng;
Qu, Pengfei;
Cao, Fanqiu;
Han, Xu;
Wang, Zhanguo

Publication type:

Article

Structural evolution of high temperature annealed single-crystalline AlN on SiC substrate.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 357, doi. 10.1140/epjs/s11734-024-01433-7

By:

Li, Jiahui;
Yuan, Ye;
Cai, Tianren;
Yin, Hengyi;
Zhao, Jiale;
Cao, Jiakang;
Wan, Wenting;
Liu, Shuai;
Zhao, Yu

Publication type:

Article

Demonstration of vertical Ga2O3 Schottky barrier diodes directly on heavily doped single-crystal substrate using thermal oxidation technology.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 283, doi. 10.1140/epjs/s11734-024-01432-8

By:

Liu, Hongyu;
Han, Shida;
Lu, Xiaoli;
Wang, Yuangang;
Dun, Shaobo;
Han, Tingting;
Lv, Yuanjie;
Feng, Zhihong

Publication type:

Article

Design of high-frequency surface acoustic wave resonators based on Al0.8Sc0.2N/AlN/Sapphire multilayer structure.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 375, doi. 10.1140/epjs/s11734-024-01430-w

By:

Li, Ji;
Guo, Wei;
Meng, Fanping;
Chen, Sitong;
Ye, Fang;
Xie, Weiping;
Chen, Li;
Wang, Jinyan;
Ye, Jichun

Publication type:

Article

A novel Ga2O3 cascode JFET with normally off operation and low switching loss.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 291, doi. 10.1140/epjs/s11734-024-01429-3

By:

Song, Hao Yu;
Yi, Bo;
Zhao, Ze Lin;
Zhang, Wan Li;
Qian, Ling-Xuan

Publication type:

Article

Improved performance of Ga2O3 solar-blind ultraviolet photodetectors with integrated n+n/Schottky-junctions.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 337, doi. 10.1140/epjs/s11734-024-01393-y

By:

Li, Weisen;
Liang, Jiarong;
Sun, Qijun;
Tang, Xingui;
Zhang, Dan

Publication type:

Article

Enabling DUV polarization detection with isotropic amorphous gallium oxide.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 311, doi. 10.1140/epjs/s11734-024-01390-1

By:

Zhang, Yaqian;
Zhang, Yonghui;
Liang, Huili;
Zhu, Rui;
Wang, Xina;
Peng, Xiaoniu;
Mei, Zengxia

Publication type:

Article

Cubic boron nitride Schottky diode for vacuum ultraviolet photodetection.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 403, doi. 10.1140/epjs/s11734-024-01389-8

By:

Lin, Zhuogeng;
Zhang, Lixin;
Zhu, Siqi;
Wang, Zhao;
Zhang, Naiji;
Wei, Xing;
Zhang, Xiangfa;
Zheng, Wei

Publication type:

Article

Chromatic aberration in homogeneous diameter expansion growth of AlN crystals by the PVT method.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 347, doi. 10.1140/epjs/s11734-024-01388-9

By:

Qin, Zuoyan;
Li, Wenliang;
He, Guangze;
Tan, Jun;
Yin, Liying;
Ji, Jianhua;
Li, Baikui;
Sun, Zhenhua;
Wu, Honglei

Publication type:

Article

Gallium vacancy displacement damage induced by 1 MeV neutron irradiation in β-Ga2O3 solar-blind photodetector.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 327, doi. 10.1140/epjs/s11734-024-01387-w

By:

Guo, Xi;
Chang, Mengmeng;
Wang, Jinbin;
Bai, Ruxue;
Zhong, Xiangli;
Zhang, Fabi;
Wu, Fengmin;
Guo, Daoyou

Publication type:

Article

Works matching IS 19516355 AND DT 2025 AND VI 234 AND IP 2

Ultra-wide-bandgap semiconductors: opportunities and challenges.

AlGaN-based self-powered solar-blind UV photodetectors with Ni/Au electrodes.

β-Ga<sub>2</sub>O<sub>3</sub> extreme ultraviolet photodetectors.

Growth of gallium oxide bulk crystals: a review.

Epitaxial lateral overgrowth of ε-Ga<sub>2</sub>O<sub>3</sub> by metal–organic chemical vapor deposition.

Investigating effect of sapphire miscut angle on UVC-LED performance with single-crystalline AlN/sapphire templates.

Impact of contact properties on the performance of β-Ga<sub>2</sub>O<sub>3</sub> solar-blind photodetector.

Progress in first-principles studies on doped semiconductor diamond.

Structural evolution of high temperature annealed single-crystalline AlN on SiC substrate.

Demonstration of vertical Ga<sub>2</sub>O<sub>3</sub> Schottky barrier diodes directly on heavily doped single-crystal substrate using thermal oxidation technology.

Design of high-frequency surface acoustic wave resonators based on Al<sub>0.8</sub>Sc<sub>0.2</sub>N/AlN/Sapphire multilayer structure.

A novel Ga<sub>2</sub>O<sub>3</sub> cascode JFET with normally off operation and low switching loss.

Improved performance of Ga<sub>2</sub>O<sub>3</sub> solar-blind ultraviolet photodetectors with integrated n<sup>+</sup>n/Schottky-junctions.

Enabling DUV polarization detection with isotropic amorphous gallium oxide.

Cubic boron nitride Schottky diode for vacuum ultraviolet photodetection.

Chromatic aberration in homogeneous diameter expansion growth of AlN crystals by the PVT method.

Gallium vacancy displacement damage induced by 1 MeV neutron irradiation in β-Ga<sub>2</sub>O<sub>3</sub> solar-blind photodetector.