Works matching IS 19317573 AND DT 2010 AND VI 5 AND IP 12
Results: 26
Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands.
- Published in:
- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1868, doi. 10.1007/s11671-010-9713-z
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- Publication type:
- Article
Biocompatible Polyhydroxyethylaspartamide-based Micelles with Gadolinium for MRI Contrast Agents.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1970, doi. 10.1007/s11671-010-9734-7
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- Article
Self-Assembled Local Artificial Substrates of GaAs on Si Substrate.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1905, doi. 10.1007/s11671-010-9760-5
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- Article
Highly Efficient Near-IR Photoluminescence of Er Immobilized in Mesoporous SBA-15.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1952, doi. 10.1007/s11671-010-9732-9
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- Publication type:
- Article
Single InGaAs Quantum Dot Coupling to the Plasmon Resonance of a Metal Nanocrystal.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1926, doi. 10.1007/s11671-010-9785-9
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- Publication type:
- Article
Statistical Analysis of Surface Reconstruction Domains on InAs Wetting Layer Preceding Quantum Dot Formation.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1901, doi. 10.1007/s11671-010-9754-3
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- Publication type:
- Article
Optimization of an Electron Transport Layer to Enhance the Power Conversion Efficiency of Flexible Inverted Organic Solar Cells.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1908, doi. 10.1007/s11671-010-9769-9
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- Publication type:
- Article
Filtering of Defects in Semipolar (11−22) GaN Using 2-Steps Lateral Epitaxial Overgrowth.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1878, doi. 10.1007/s11671-010-9724-9
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- Publication type:
- Article
Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1913, doi. 10.1007/s11671-010-9771-2
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- Publication type:
- Article
Ordered Arrays of SiGe Islands from Low-Energy PECVD.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1917, doi. 10.1007/s11671-010-9773-0
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- Publication type:
- Article
Porous Alumina Films with Width-Controllable Alumina Stripes.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1977, doi. 10.1007/s11671-010-9735-6
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- Publication type:
- Article
Morphology Analysis of Si Island Arrays on Si(001).
- Published in:
- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1882, doi. 10.1007/s11671-010-9725-8
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- Publication type:
- Article
Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111).
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1888, doi. 10.1007/s11671-010-9731-x
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- Publication type:
- Article
Surface Modification and Planar Defects of Calcium Carbonates by Magnetic Water Treatment.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1982, doi. 10.1007/s11671-010-9736-5
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- Publication type:
- Article
Hydrothermal Synthesis, Microstructure and Photoluminescence of Eu-Doped Mixed Rare Earth Nano-Orthophosphates.
- Published in:
- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1962, doi. 10.1007/s11671-010-9733-8
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- Publication type:
- Article
Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1892, doi. 10.1007/s11671-010-9747-2
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- Publication type:
- Article
Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy.
- Published in:
- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1897, doi. 10.1007/s11671-010-9752-5
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- Publication type:
- Article
In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron Diffraction and Scanning Tunneling Microscopy.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1935, doi. 10.1007/s11671-010-9814-8
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- Publication type:
- Article
Erratum to: Concentric Multiple Rings by Droplet Epitaxy: Fabrication and Study of the Morphological Anisotropy.
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- 2010
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- Publication type:
- Correction Notice
Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1942, doi. 10.1007/s11671-010-9818-4
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- Publication type:
- Article
Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1948, doi. 10.1007/s11671-010-9820-x
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- Publication type:
- Article
Eighth International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces.
- Published in:
- 2010
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- Publication type:
- Editorial
Temperature-Dependent Site Control of InAs/GaAs (001) Quantum Dots Using a Scanning Tunneling Microscopy Tip During Growth.
- Published in:
- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1930, doi. 10.1007/s11671-010-9802-z
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- Publication type:
- Article
Concentric Multiple Rings by Droplet Epitaxy: Fabrication and Study of the Morphological Anisotropy.
- Published in:
- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1865, doi. 10.1007/s11671-010-9699-6
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- Publication type:
- Article
Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001).
- Published in:
- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1873, doi. 10.1007/s11671-010-9723-x
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- Publication type:
- Article
Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1921, doi. 10.1007/s11671-010-9781-0
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- Publication type:
- Article