Works matching IS 18626300 AND DT 2024 AND VI 221 AND IP 24

Results: 11

Masthead.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 24, p. 1, doi. 10.1002/pssa.202470048
Publication type:
Article
Cover Picture.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 24, p. 1, doi. 10.1002/pssa.202470047
Publication type:
Article
Ultra‐Doped Semiconductors by Non‐Equilibrium Processing.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 24, p. 1, doi. 10.1002/pssa.202400887
By:
- Zhou, Shengqiang;
- Pastor, David;
- Napolitani, Enrico;
- Chang, Guo‐En
Publication type:
Article
Tuning Superconductivity in Nanosecond Laser‐Annealed Boron‐Doped Si1–xGex Epilayers.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 24, p. 1, doi. 10.1002/pssa.202400313
By:
- Nath, Shimul Kanti;
- Turan, Ibrahim;
- Desvignes, Léonard;
- Largeau, Ludovic;
- Mauguin, Olivia;
- Túnica, Marc;
- Amato, Michele;
- Renard, Charles;
- Hallais, Géraldine;
- Débarre, Dominique;
- Chiodi, Francesca
Publication type:
Article
Milliseconds Thermal Processing of Boron Hyperdoped Germanium.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 24, p. 1, doi. 10.1002/pssa.202400260
By:
- Cheng, Yu;
- Long, FangChao;
- Steuer, Oliver;
- Lambeva, Nikol;
- Bärwolf, Florian;
- Zscharschuch, Jens;
- Erbe, Artur;
- Helm, Manfred;
- Zhou, Shengqiang;
- Prucnal, Slawomir
Publication type:
Article
Extended Infrared Absorption in Nanostructured Si Through Se Implantation and Flash Lamp Annealing.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 24, p. 1, doi. 10.1002/pssa.202400133
By:
- Radfar, Behrad;
- Liu, Xiaolong;
- Berencén, Yonder;
- Shaikh, Mohd Saif;
- Prucnal, Slawomir;
- Kentsch, Ulrich;
- Vähänissi, Ville;
- Zhou, Shengqiang;
- Savin, Hele
Publication type:
Article
Effective Carrier Lifetime in Ultrashort Pulse Laser Hyperdoped Silicon: Sulfur Concentration Dependence and Practical Limitations.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 24, p. 1, doi. 10.1002/pssa.202400132
By:
- Schäfer, Sören;
- Liu, Xiaolong;
- Mc Kearney, Patrick;
- Paulus, Simon;
- Radfar, Behrad;
- Vähänissi, Ville;
- Savin, Hele;
- Kontermann, Stefan
Publication type:
Article
Ultrafast Laser Hyperdoped Black Silicon and Its Application in Photodetectors: A Review.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 24, p. 1, doi. 10.1002/pssa.202400127
By:
- Huang, Song;
- Jin, Xiaorong;
- Wu, Qiang;
- Song, Guanting;
- Cao, Jiaxin;
- Zhou, Xu;
- Jiang, Haonan;
- Gao, Weiqing;
- Xu, Jingjun
Publication type:
Article
Native Oxide Layer Role during Cryogenic‐Temperature Ion Implantations in Germanium.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 24, p. 1, doi. 10.1002/pssa.202400124
By:
- Caudevilla, Daniel;
- Pérez‐Zenteno, Francisco José;
- Duarte‐Cano, Sebastián;
- Algaidy, Sari;
- Benítez‐Fernández, Rafael;
- Godoy‐Pérez, Guilleromo;
- Olea, Javier;
- San Andrés, Enrique;
- García‐Hernansanz, Rodrigo;
- del Prado, Álvaro;
- Mártil, Ignacio;
- Pastor, David;
- García‐Hemme, Eric
Publication type:
Article
Optical, Electrical, and Optoelectronic Characterization of Ti‐Supersaturated Gallium Arsenide.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 24, p. 1, doi. 10.1002/pssa.202400123
By:
- Algaidy, Sari;
- Caudevilla, Daniel;
- Godoy‐Pérez, Guillermo;
- Benítez‐Fernández, Rafael;
- Pérez‐Zenteno, Francisco;
- Duarte‐Cano, Sebastián;
- García‐Hernansanz, Rodrigo;
- San Andrés, Enrique;
- García‐Hemme, Eric;
- Olea, Javier;
- Siegel, Jan;
- Gonzalo, José;
- Pastor, David;
- del Prado, Álvaro
Publication type:
Article
Laser‐Annealed SiO2/Si1−xGex Scaffolds for Nanoscaled Devices, Synergy of Experiment, and Computation.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 24, p. 1, doi. 10.1002/pssa.202400120
By:
- Ricciarelli, Damiano;
- Müller, Jonas;
- Larrieu, Guilhem;
- Deretzis, Ioannis;
- Calogero, Gaetano;
- Martello, Enrico;
- Fisicaro, Giuseppe;
- Hartmann, Jean‐Michel;
- Kerdilès, Sébastien;
- Opprecht, Mathieu;
- Mio, Antonio Massimiliano;
- Daubriac, Richard;
- Cristiano, Fuccio;
- La Magna, Antonino
Publication type:
Article

Works matching IS 18626300 AND DT 2024 AND VI 221 AND IP 24

Masthead.

Cover Picture.

Ultra‐Doped Semiconductors by Non‐Equilibrium Processing.

Tuning Superconductivity in Nanosecond Laser‐Annealed Boron‐Doped Si<sub>1–x</sub>Ge<sub>x</sub> Epilayers.

Milliseconds Thermal Processing of Boron Hyperdoped Germanium.

Extended Infrared Absorption in Nanostructured Si Through Se Implantation and Flash Lamp Annealing.

Effective Carrier Lifetime in Ultrashort Pulse Laser Hyperdoped Silicon: Sulfur Concentration Dependence and Practical Limitations.

Ultrafast Laser Hyperdoped Black Silicon and Its Application in Photodetectors: A Review.

Native Oxide Layer Role during Cryogenic‐Temperature Ion Implantations in Germanium.

Optical, Electrical, and Optoelectronic Characterization of Ti‐Supersaturated Gallium Arsenide.

Laser‐Annealed SiO<sub>2</sub>/Si<sub>1−x</sub>Ge<sub>x</sub> Scaffolds for Nanoscaled Devices, Synergy of Experiment, and Computation.