Masthead.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 22, p. 1, doi. 10.1002/pssa.202470044
- Publication type:
- Article
Works matching IS 18626300 AND DT 2024 AND VI 221 AND IP 22
Results: 14
1
2
Nanoswitches: Resistively Switching Chalcogenides for Future Electronics.
- Published in:
- 2024
- By:
- Publication type:
- Correction Notice
3
Nanoswitches: Resistively Switching Chalcogenides for Future Electronics.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 22, p. 1, doi. 10.1002/pssa.202400810
- By:
- Publication type:
- Article
4
Growth of Textured Chalcogenide Thin Films and Their Functionalization through Confinement.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 22, p. 1, doi. 10.1002/pssa.202300921
- By:
- Publication type:
- Article
5
Resistive Switching Systems: A Spectromicroscopy Approach.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 22, p. 1, doi. 10.1002/pssa.202300500
- By:
- Publication type:
- Article
6
Eightwise Switching Mechanism in Memristive SrTiO<sub>3</sub> Devices and Its Implications on the Device Performance.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 22, p. 1, doi. 10.1002/pssa.202300483
- By:
- Publication type:
- Article
7
On the Application Potential of Chemically Tailored Metal Oxide and Higher Chalcogenide Nanoparticles for Nanoscale Resistive Switching Devices.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 22, p. 1, doi. 10.1002/pssa.202300456
- By:
- Publication type:
- Article
8
Atom Probe Tomography Advances Chalcogenide Phase‐Change and Thermoelectric Materials.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 22, p. 1, doi. 10.1002/pssa.202300425
- By:
- Publication type:
- Article
9
Dual‐Mode Operation of Epitaxial Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>: Ferroelectric and Filamentary‐Type Resistive Switching.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 22, p. 1, doi. 10.1002/pssa.202300409
- By:
- Publication type:
- Article
10
Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 22, p. 1, doi. 10.1002/pssa.202300407
- By:
- Publication type:
- Article
11
Physical Origin of Threshold Switching in Amorphous Chromium‐Doped V<sub>2</sub>O<sub>3</sub>.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 22, p. 1, doi. 10.1002/pssa.202300405
- By:
- Publication type:
- Article
12
Doped HfO<sub>x</sub> Nanoclusters: Polar and Resistive Switching in the Smallest Functional Units.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 22, p. 1, doi. 10.1002/pssa.202300404
- By:
- Publication type:
- Article
13
Investigation of the Large Variability of HfO<sub>2</sub>‐Based Resistive Random Access Memory Devices with a Small Current Compliance by a Kinetic Monte Carlo Model.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 22, p. 1, doi. 10.1002/pssa.202300403
- By:
- Publication type:
- Article
14
Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 22, p. 1, doi. 10.1002/pssa.202300401
- By:
- Publication type:
- Article