Works matching IS 18626254 AND DT 2025 AND VI 19 AND IP 4

Results: 17

Issue Information.

Published in:: Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 4, p. 1, doi. 10.1002/pssr.202570032
Publication type:: Article

Epitaxial Growth of Bi2Se3 Thin Films by Thermal Evaporation for the Application of Electrochemical Biosensors.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 4, p. 1, doi. 10.1002/pssr.202400322

By:

Zhang, Chunpan;
Gao, Haizhen;
Xu, Shiqi;
Bai, Jiangyue;
Jiang, Yujiu;
Li, Xiuxia;
Mao, Pengcheng;
Yang, Yanbo;
Han, Junfeng

Publication type:

Article

Epitaxial Growth of Bi2Se3 Thin Films by Thermal Evaporation for the Application of Electrochemical Biosensors.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 4, p. 1, doi. 10.1002/pssr.202400322

By:

Zhang, Chunpan;
Gao, Haizhen;
Xu, Shiqi;
Bai, Jiangyue;
Jiang, Yujiu;
Li, Xiuxia;
Mao, Pengcheng;
Yang, Yanbo;
Han, Junfeng

Publication type:

Article

Improved Threshold Voltage Stability and Gate Reliability in p‐GaN Gate High‐Electron‐Mobility Transistors with Hydrogen Plasma Treatment on the Sidewalls.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 4, p. 1, doi. 10.1002/pssr.202400367

By:

Zhang, Yuxiang;
Dong, Zhihua;
Yu, Guohao;
Sun, Yingfei;
Li, Yu;
Lu, Shaoqian;
Yue, Huixin;
Jiang, Leifeng;
Zeng, Zongming;
Cai, Yong;
Zhang, Baoshun

Publication type:

Article

Laser‐Textured Polydimethylsiloxane/Multiwalled Carbon Nanotubes Composites for Strain Sensors Resistant to Droplet Interference.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 4, p. 1, doi. 10.1002/pssr.202400365

By:

Chen, Lie;
Tian, Yuyang;
Li, Qianliang;
Cheng, Jian;
Yang, Qibiao;
Liu, Dun

Publication type:

Article

Super‐Resolution by Structured Illumination: Digital Holographic Microscopy for Metrology of Nanomaterials.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 4, p. 1, doi. 10.1002/pssr.202400364

By:

Shaji, Athira;
M. K., Sheeja

Publication type:

Article

Improved Light Outcoupling in Quantum Dot Light‐Emitting Diodes Employing Multilevel Wrinkle Structures.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 4, p. 1, doi. 10.1002/pssr.202400353

By:

Guo, Peng;
Xie, Yukai;
Yuan, Peiling;
Li, Sumin;
Guo, Ying;
Jin, Wentao;
Song, Jiaojiao;
Zhang, Kun;
Qi, Hui

Publication type:

Article

Acoustic‐Vibration Coupling Characteristics of Composite Plate Structure with Acoustic Black Hole and Acoustic Coating.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 4, p. 1, doi. 10.1002/pssr.202400369

By:

Wen, Huabing;
Qiao, Yunjie;
Li, Wei;
Guo, Junhua

Publication type:

Article

Biaxial Magnetic Anisotropy for Multimodal Ferromagnetic Resonance Through Two‐Dimensional Permalloy Microstructure Array.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 4, p. 1, doi. 10.1002/pssr.202400351

By:

Feng, Chenyu;
Fu, Tianlong;
Bo, Guohao;
Xu, Xiaoguang;
Meng, Kangkang;
Zhang, Jian;
Zhao, Rongzhi;
Zhang, Xuefeng

Publication type:

Article

Optimization of the Sensitivity of a Temperature Sensor Based on the Germanium‐Vacancy Color Center (GeV) in Diamond.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 4, p. 1, doi. 10.1002/pssr.202400315

By:

Cojocaru, Ivan S.;
Soshenko, Vladimir V.;
Bolshedvorskii, Stepan V.;
Davydov, Valeriy A.;
Kulikova, Liudmila F.;
Agafonov, Viatcheslav N.;
Chernyavskiy, Alexandr;
Smolyaninov, Andrey N.;
Sorokin, Vadim N.;
Kilin, Sergey Ya.;
Akimov, Alexey V.

Publication type:

Article

Revealing Dielectric's Degradation Effect on Charge Transport in Dual Gate In–Ga–Zn–O Thin Film Transistor via Accumulation–Depletion Operation Mode.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 4, p. 1, doi. 10.1002/pssr.202400350

By:

Chuai, Xichen;
Yang, Guanhua;
Duan, Xinlv;
Lu, Congyan;
Lu, Nianduan;
Geng, Di;
Zhao, Ying;
Wang, Jiawei;
Li, Ling

Publication type:

Article

Correlation between Crystalline Defects and Electrical Characteristics of In Situ Boron‐Doped Epitaxial Si0.8Ge0.2 Films.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 4, p. 1, doi. 10.1002/pssr.202400335

By:

Shin, Hyungchul;
Eom, Deokjoon;
Yoon, Dongmin;
Kim, Kangwon;
Yoo, Hyung Keun;
Ko, Dae‐Hong;
Kim, Hyoungsub

Publication type:

Article

The Critical Influence of Spin‐Dry Technique on the Surface Passivation Quality of Crystalline Silicon Solar Cell Structures.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 4, p. 1, doi. 10.1002/pssr.202400314

By:

Kumar, Vibhor;
Gao, Munan;
Zin, Ngwe

Publication type:

Article

Enhancing the Performance and Stability of FAPbI3 Perovskite X‐ray Detectors via Bi‐Doping.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 4, p. 1, doi. 10.1002/pssr.202400342

By:

Wang, Zhenyu;
Zhang, Hui;
Wang, Zihan;
Wan, Changmao;
Ma, Yuanbo;
Liu, Yupeng;
Cao, Chentai;
Song, Shuo;
Ye, Jiajiu;
Pan, Xu

Publication type:

Article

Carrier Tunnelings on Ultrashort‐Gate Junction‐Less Field‐Effect Transistor Designs.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 4, p. 1, doi. 10.1002/pssr.202400336

By:

Sugiura, Takaya

Publication type:

Article

Enhanced Nanoporosity of Single‐Walled Carbon Nanotube Network.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 4, p. 1, doi. 10.1002/pssr.202400310

By:

Seo, Kang Hoon;
Hahm, Myung Gwan;
Kim, Dong Young

Publication type:

Article

Surface Plasmon Polariton Photoluminescence Enhancement of Single InP Nanowires with InAsP Quantum Wells.

Published in:

Physica Status Solidi - Rapid Research Letters, 2025, v. 19, n. 4, p. 1, doi. 10.1002/pssr.202400296

By:

Shugabaev, Talgat;
Gridchin, Vladislav O.;
Melnichenko, Ivan A.;
Bulkin, Pavel;
Abramov, Artem N.;
Kuznetsov, Alexey;
Maksimova, Alina A.;
Novikov, Ivan A.;
Khrebtov, Artem I.;
Ubyivovk, Yevgeniy V.;
Kotlyar, Konstantin P.;
Kryzhanovskaya, Natalia V.;
Reznik, Rodion R.;
Cirlin, George E.

Publication type:

Article

Works matching IS 18626254 AND DT 2025 AND VI 19 AND IP 4

Issue Information.

Epitaxial Growth of Bi<sub>2</sub>Se<sub>3</sub> Thin Films by Thermal Evaporation for the Application of Electrochemical Biosensors.

Epitaxial Growth of Bi<sub>2</sub>Se<sub>3</sub> Thin Films by Thermal Evaporation for the Application of Electrochemical Biosensors.

Improved Threshold Voltage Stability and Gate Reliability in p‐GaN Gate High‐Electron‐Mobility Transistors with Hydrogen Plasma Treatment on the Sidewalls.

Laser‐Textured Polydimethylsiloxane/Multiwalled Carbon Nanotubes Composites for Strain Sensors Resistant to Droplet Interference.

Super‐Resolution by Structured Illumination: Digital Holographic Microscopy for Metrology of Nanomaterials.

Improved Light Outcoupling in Quantum Dot Light‐Emitting Diodes Employing Multilevel Wrinkle Structures.

Acoustic‐Vibration Coupling Characteristics of Composite Plate Structure with Acoustic Black Hole and Acoustic Coating.

Biaxial Magnetic Anisotropy for Multimodal Ferromagnetic Resonance Through Two‐Dimensional Permalloy Microstructure Array.

Optimization of the Sensitivity of a Temperature Sensor Based on the Germanium‐Vacancy Color Center (GeV) in Diamond.

Revealing Dielectric's Degradation Effect on Charge Transport in Dual Gate In–Ga–Zn–O Thin Film Transistor via Accumulation–Depletion Operation Mode.

Correlation between Crystalline Defects and Electrical Characteristics of In Situ Boron‐Doped Epitaxial Si<sub>0.8</sub>Ge<sub>0.2</sub> Films.

The Critical Influence of Spin‐Dry Technique on the Surface Passivation Quality of Crystalline Silicon Solar Cell Structures.

Enhancing the Performance and Stability of FAPbI<sub>3</sub> Perovskite X‐ray Detectors via Bi‐Doping.

Carrier Tunnelings on Ultrashort‐Gate Junction‐Less Field‐Effect Transistor Designs.

Enhanced Nanoporosity of Single‐Walled Carbon Nanotube Network.

Surface Plasmon Polariton Photoluminescence Enhancement of Single InP Nanowires with InAsP Quantum Wells.