Works matching IS 18626254 AND DT 2024 AND VI 18 AND IP 11

Results: 28

Effective Lifetime of Nonequilibrium Carriers in Perovskite‐Inspired Cu2AgBiI6.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400134

By:

Cai, Zenghua;
Dai, Chen‐Min;
Ma, Chunlan

Publication type:

Article

Long‐Range Charge Carrier Transport in Planar Polymer Bulk‐Heterojunction Photovoltaic Cells.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400139

By:

AlTal, Faleh;
Gao, Jun

Publication type:

Article

Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na‐Flux Method and Enlargement of the Substrate Surpassing 6 Inches.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400106

By:

Imanishi, Masayuki;
Usami, Shigeyoshi;
Murakami, Kosuke;
Okumura, Kanako;
Nakamura, Kosuke;
Kakinouchi, Keisuke;
Otoki, Yohei;
Yamashita, Tomio;
Tsurumi, Naohiro;
Tamura, Satoshi;
Ohno, Hiroshi;
Okayama, Yoshio;
Fujimori, Taku;
Nagai, Seiji;
Moriyama, Miki;
Mori, Yusuke

Publication type:

Article

Epitaxial AlBN/β‐Nb2N Ferroelectric/Superconductor Heterostructures.

Published in:

2024

By:

Savant, Chandrashekhar;
Nguyen, Thai‐Son;
Vishwakarma, Saurabh;
Lee, Joongwon;
Ithepalli, Anand;
Chen, Yu‐Hsin;
Nomoto, Kazuki;
Rana, Farhan;
Smith, David J.;
Xing, Huili Grace;
Jena, Debdeep

Publication type:

Case Study

Nitride Semiconductors.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400312

By:

Fujioka, Hiroshi;
Miyake, Hideto;
Hirayama, Hideki;
Yamada, Yoichi;
Funato, Mitsuru;
Katayama, Ryuji;
Kojima, Kazunobu;
Ichikawa, Shuhei;
Murotani, Hideaki;
Uemukai, Masahiro

Publication type:

Article

Masthead.

Published in:: Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202470028
Publication type:: Article

GaN Quantum Dots in Resonant Cavity Nanopillars as Deep‐UV Single‐Photon Sources.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400188

By:

Schürmann, Hannes;
Bertram, Frank;
Schmidt, Gordon;
Veit, Peter;
August, Olga;
Berger, Christoph;
Dadgar, Armin;
Strittmatter, André;
Kullig, Julius;
Wiersig, Jan;
Gao, Kang;
Holmes, Mark;
Arakawa, Yasuhiko;
Christen, Jürgen

Publication type:

Article

Robust Electrothermal Switching of Optical Phase‐Change Materials through Computer‐Aided Adaptive Pulse Optimization.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400177

By:

Garud, Parth;
Aryana, Kiumars;
Popescu, Cosmin Constantin;
Vitale, Steven;
Sharma, Rashi;
Richardson, Kathleen A.;
Gu, Tian;
Hu, Juejun;
Kim, Hyun Jung

Publication type:

Article

3D Nanostructured Electrodes Based on Anodic Alumina Templates for Stable Pseudocapacitors.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400144

By:

Aftab, Tabish;
Almora, Osbel;
Ferre‐Borrull, Josep;
Marsal, Lluis F.

Publication type:

Article

Pulsed Sputtering Epitaxy of Coherent AlN/Al0.5Ga0.5N/AlN Multichannel Structures.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400142

By:

Kozaka, Takao;
Maeda, Ryota;
Ueno, Kohei;
Fujioka, Hiroshi

Publication type:

Article

Epitaxial AlBN/β‐Nb2N Ferroelectric/Superconductor Heterostructures.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400157

By:

Savant, Chandrashekhar;
Nguyen, Thai‐Son;
Vishwakarma, Saurabh;
Lee, Joongwon;
Ithepalli, Anand;
Chen, Yu‐Hsin;
Nomoto, Kazuki;
Rana, Farhan;
Smith, David J.;
Xing, Huili Grace;
Jena, Debdeep

Publication type:

Article

True‐Red InGaN Light‐Emitting Diodes for Display Applications.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400012

By:

Armitage, Robert;
Ren, Zhongmin;
Holmes, Mark;
Flemish, Joseph

Publication type:

Article

High‐Cerium‐Content Fe–Ce–Nd–B Sintered Magnets with High Coercivity.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400151

By:

Goll, Dagmar;
Boettle, Marius;
Buschbeck, Joerg;
Loeffler, Ralf;
Schneider, Gerhard

Publication type:

Article

Demonstration of Near‐Size‐Independent External Quantum Efficiency for 368 nm UV Micro‐LEDs.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400119

By:

Wang, Guangying;
Xie, Shuwen;
Li, Yuting;
Zhang, Wentao;
Vigen, Jonathan;
Shih, Timothy;
Lin, Qinchen;
Gong, Jiarui;
Ma, Zhenqiang;
Pasayat, Shubhra S;
Gupta, Chirag

Publication type:

Article

Spontaneously Integrated Multicolor InGaN Micro‐Light‐Emitting Diodes for Spectrum‐Controllable Broadband Light Sources.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400094

By:

Matsuda, Yoshinobu;
Miyawaki, Haruyoshi;
Funato, Mitsuru;
Kawakami, Yoichi

Publication type:

Article

Annealing Process on Metal–Oxide–Semiconductor Channel Properties for Quasivertical GaN‐on‐Sapphire Trench Metal–Oxide–Semiconductor Field‐Effect Transistor.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400075

By:

Zhou, Jiaan;
Yang, An;
Yu, Guohao;
Xing, Runxian;
Guo, Bohan;
Hao, Chunfeng;
Li, Yu;
Liu, Bosen;
Yue, Huixin;
Jiang, Jinxia;
Zhang, Li;
Deng, Xuguang;
Zeng, Zhongming;
Zhang, Baoshun;
Zhang, Xinping

Publication type:

Article

Graphene Plasmonic Time Crystals.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400116

By:

Kim, Kwang‐Hyon;
O, Kang‐Hyok

Publication type:

Article

Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na‐Flux Method and Enlargement of the Substrate Surpassing 6 Inches.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400106

By:

Imanishi, Masayuki;
Usami, Shigeyoshi;
Murakami, Kosuke;
Okumura, Kanako;
Nakamura, Kosuke;
Kakinouchi, Keisuke;
Otoki, Yohei;
Yamashita, Tomio;
Tsurumi, Naohiro;
Tamura, Satoshi;
Ohno, Hiroshi;
Okayama, Yoshio;
Fujimori, Taku;
Nagai, Seiji;
Moriyama, Miki;
Mori, Yusuke

Publication type:

Article

First‐Principles Study of the Al–N‐Codoped Zincblende ZnO.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400104

By:

Xiang, Yang;
Tang, Hao;
Zhu, Zihao;
Pang, Bo;
Zhou, Tingjun;
Zhan, Huahan;
Kang, Junyong;
Zhou, Yongliang

Publication type:

Article

Optoelectronic Transistor Based on InSe/MoS2 Heterostructure for Multimodal Nociceptor.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400111

By:

Wang, Haobin;
Yang, Yifei;
Yu, Niannian;
Chen, Ziqi;
Yuan, Junhui;
Wang, Jiafu

Publication type:

Article

Strategic Review of Organic–Inorganic Perovskite Photodetectors.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400110

By:

Goel, Neeraj;
Kushwaha, Aditya;
Kwoka, Monika;
Kumar, Mahesh

Publication type:

Article

Oxygen Stoichiometry Engineering in P‐Type NiOx for High‐Performance NiO/Ga2O3 Heterostructure p–n Diode.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400109

By:

Hong, Yuehua;
Zheng, Xuefeng;
Zhang, Hao;
He, Yunlong;
Zhu, Tian;
Liu, Kai;
Li, Ang;
Ma, Xiaohua;
Zhang, Weidong;
Zhang, Jianfu;
Hao, Yue

Publication type:

Article

Deep‐Ultraviolet Luminescence Properties of AlN.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400017

By:

Ishii, Ryota;
Yoshikawa, Akira;
Funato, Mitsuru;
Kawakami, Yoichi

Publication type:

Article

GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400013

By:

Brunner, Frank;
Brusaterra, Enrico;
Bahat‐Treidel, Eldad;
Hilt, Oliver;
Weyers, Markus

Publication type:

Article

226 nm Far‐Ultraviolet‐C Light Emitting Diodes with an Emission Power over 2 mW.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400092

By:

Kolbe, Tim;
Cho, Hyun Kyong;
Hagedorn, Sylvia;
Rass, Jens;
Ruschel, Jan;
Einfeldt, Sven;
Weyers, Markus

Publication type:

Article

A High Channel Mobility and a Normally‐off Operation of a Vertical GaN Metal‐Oxide‐Semiconductor Field‐Effect Transistors using an AlSiO/AlN Gate Stack Structure on m‐plane Trench Sidewall.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400010

By:

Kanechika, Masakazu;
Ito, Kenji;
Narita, Tetsuo;
Tomita, Kazuyoshi;
Iwasaki, Shiro;
Kikuta, Daigo;
Kachi, Tetsu

Publication type:

Article

Enhanced Wall‐Plug Efficiency over 2.4% and Wavelength Dependence of Electrical Properties at Far UV‐C Light‐Emitting Diodes on Single‐Crystal AlN Substrate.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400002

By:

Kobayashi, Hirotsugu;
Sato, Kosuke;
Okuaki, Yusuke;
Lee, TaeGi;
Kunimi, Yoshihisa;
Kuze, Naohiro

Publication type:

Article

Fabrication of Vertical AlGaN‐Based Ultraviolet‐B Laser Diodes Using a Substrate Exfoliation Method with Water.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202300460

By:

Nishibayashi, Toma;
Kondo, Ryosuke;
Matsubara, Eri;
Yamada, Ryoya;
Miyake, Rintaro;
Sasaki, Yusuke;
Imoto, Yoshinori;
Iwayama, Sho;
Takeuchi, Tetsuya;
Kamiyama, Satoshi;
Miyake, Hideto;
Iwaya, Motoaki

Publication type:

Article

Works matching IS 18626254 AND DT 2024 AND VI 18 AND IP 11

Effective Lifetime of Nonequilibrium Carriers in Perovskite‐Inspired Cu<sub>2</sub>AgBiI<sub>6</sub>.

Long‐Range Charge Carrier Transport in Planar Polymer Bulk‐Heterojunction Photovoltaic Cells.

Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na‐Flux Method and Enlargement of the Substrate Surpassing 6 Inches.

Epitaxial AlBN/β‐Nb<sub>2</sub>N Ferroelectric/Superconductor Heterostructures.

Nitride Semiconductors.

Masthead.

GaN Quantum Dots in Resonant Cavity Nanopillars as Deep‐UV Single‐Photon Sources.

Robust Electrothermal Switching of Optical Phase‐Change Materials through Computer‐Aided Adaptive Pulse Optimization.

3D Nanostructured Electrodes Based on Anodic Alumina Templates for Stable Pseudocapacitors.

Pulsed Sputtering Epitaxy of Coherent AlN/Al<sub>0.5</sub>Ga<sub>0.5</sub>N/AlN Multichannel Structures.

Epitaxial AlBN/β‐Nb<sub>2</sub>N Ferroelectric/Superconductor Heterostructures.

True‐Red InGaN Light‐Emitting Diodes for Display Applications.

High‐Cerium‐Content Fe–Ce–Nd–B Sintered Magnets with High Coercivity.

Demonstration of Near‐Size‐Independent External Quantum Efficiency for 368 nm UV Micro‐LEDs.

Spontaneously Integrated Multicolor InGaN Micro‐Light‐Emitting Diodes for Spectrum‐Controllable Broadband Light Sources.

Annealing Process on Metal–Oxide–Semiconductor Channel Properties for Quasivertical GaN‐on‐Sapphire Trench Metal–Oxide–Semiconductor Field‐Effect Transistor.

Graphene Plasmonic Time Crystals.

Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na‐Flux Method and Enlargement of the Substrate Surpassing 6 Inches.

First‐Principles Study of the Al–N‐Codoped Zincblende ZnO.

Optoelectronic Transistor Based on InSe/MoS<sub>2</sub> Heterostructure for Multimodal Nociceptor.

Strategic Review of Organic–Inorganic Perovskite Photodetectors.

Oxygen Stoichiometry Engineering in P‐Type NiO<sub>x</sub> for High‐Performance NiO/Ga<sub>2</sub>O<sub>3</sub> Heterostructure p–n Diode.

Deep‐Ultraviolet Luminescence Properties of AlN.

GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices.

226 nm Far‐Ultraviolet‐C Light Emitting Diodes with an Emission Power over 2 mW.

A High Channel Mobility and a Normally‐off Operation of a Vertical GaN Metal‐Oxide‐Semiconductor Field‐Effect Transistors using an AlSiO/AlN Gate Stack Structure on m‐plane Trench Sidewall.

Enhanced Wall‐Plug Efficiency over 2.4% and Wavelength Dependence of Electrical Properties at Far UV‐C Light‐Emitting Diodes on Single‐Crystal AlN Substrate.

Fabrication of Vertical AlGaN‐Based Ultraviolet‐B Laser Diodes Using a Substrate Exfoliation Method with Water.