Works matching IS 18626254 AND DT 2024 AND VI 18 AND IP 10

Results: 19

Masthead.

Published in:: Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202470025
Publication type:: Article

Encapsulation Effects on Ge‐Rich GeSbTe Phase‐Change Materials at High Temperature.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202470024

By:

Daoudi, Oumaima;
Nolot, Emmanuel;
Dartois, Mélanie;
Tessaire, Magali;
Aussenac, François;
Bernier, Nicolas;
Gauthier, Nicolas;
Rochat, Névine;
Fillot, Frédéric;
Le, Van‐Hoan;
Renevier, Hubert;
Navarro, Gabriele

Publication type:

Article

Phase‐Change and Ovonic Materials (fifth edition).

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202400239

By:

Noé, Pierre;
Kooi, Bart J.;
Wuttig, Matthias

Publication type:

Article

Optical Properties of GeSe1−xTex Chalcogenide Materials Promising for on‐Chip Low and Ultra‐Low Loss Reconfigurable Photonics and Nonlinear Devices.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202400129

By:

Albanese, Anthony;
Tomelleri, Martina;
Karam, Lara;
Dory, Jean‐Baptiste;
Licitra, Christophe;
Charbonnier, Benoît;
Jager, Jean‐Baptiste;
Coillet, Aurélien;
Cluzel, Benoît;
Noé, Pierre

Publication type:

Article

Atomic Structure and Dynamics of Unusual and Wide‐Gap Phase‐Change Chalcogenides: A GeTe2 Case.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202300482

By:

Usuki, Takeshi;
Benmore, Chris J.;
Tverjanovich, Andrey;
Bereznev, Sergei;
Khomenko, Maxim;
Sokolov, Anton;
Fontanari, Daniele;
Ohara, Koji;
Bokova, Maria;
Kassem, Mohammad;
Bychkov, Eugene

Publication type:

Article

Modified Electronic Structure of Amorphous Mn–Si–Te for Ovonic Threshold Switch Application: Improved Thermal Stability by the Formation of Mn–Te Bonding.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202300474

By:

Saito, Kentaro;
Hatayama, Shogo;
Saito, Yuta

Publication type:

Article

Study of Ge‐Rich Ge–Sb–Te Device‐Dependent Segregation for Industrial Grade Embedded Phase‐Change Memory.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202300449

By:

Petroni, Elisa;
Allegra, Mario;
Baldo, Matteo;
Laurin, Luca;
Serafini, Andrea;
Favennec, Laurent;
Desvoivres, Latifa;
Sandrini, Jury;
Boccaccio, Christian;
Le‐Friec, Yannick;
Ostrovsky, Alain;
Gouraud, Pascal;
Bonnevialle, Aurore;
Ranica, Rossella;
Redaelli, Andrea

Publication type:

Article

Encapsulation Effects on Ge‐Rich GeSbTe Phase‐Change Materials at High Temperature.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202300448

By:

Daoudi, Oumaima;
Nolot, Emmanuel;
Dartois, Mélanie;
Tessaire, Magali;
Aussenac, François;
Bernier, Nicolas;
Gauthier, Nicolas;
Rochat, Névine;
Fillot, Frédéric;
Le, Van‐Hoan;
Renevier, Hubert;
Navarro, Gabriele

Publication type:

Article

Programming Operations Analysis and Statistics in One Selector and One Memory Ovonic Threshold Switching + Phase‐Change Memory Double‐Patterned Self‐Aligned Structure.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202300429

By:

Antonelli, Renzo;
Bourgeois, Guillaume;
Martin, Simon;
Meli, Valentina;
Castellani, Niccoló;
Salvi, Antoine;
Gout, Sylvain;
Bernard, Mathieu;
Dezest, Pattamon;
Andrieu, François;
Souifi, Abdelkader;
Navarro, Gabriele

Publication type:

Article

Low RESET Current Mushroom‐Cell Phase‐Change Memory Using Fiber‐Textured Homostructure GeSbTe on Highly Oriented Seed Layer.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202300426

By:

Cohen, Guy M.;
Majumdar, Amlan;
Cheng, Cheng‐Wei;
Ray, Asit;
Piatek, Daniel;
Gignac, Lynne;
Lavoie, Christian;
Grun, Alexander;
Cheng, Huai‐Yu;
Liu, Zhi‐Lun;
Lung, Hsiang‐Lan;
Miyazoe, Hiroyuki;
Bruce, Robert L.;
BrightSky, Matthew

Publication type:

Article

Flexible Electronics Applications of Ge‐Rich and Se‐Substituted Phase‐Change Materials in Nonvolatile Memories.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202300425

By:

Pady, Joe;
Costa, Julio;
Ramsdale, Catherine;
Alkhalil, Feras;
Nevill, Aimee;
Craciun, Monica F.;
Wright, C. David

Publication type:

Article

Crystallization of Amorphous N‐Doped Ge‐Rich GST Layers Deposited on a Polycrystalline GST Template.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202300421

By:

Luong, Minh‐Anh;
Rahier, Eloïse;
Ran, Sijia;
Claverie, Alain

Publication type:

Article

Developing GeSbTe Superlattice Through Understanding of the Reversible Phases and Engineering Its Interspaces.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202300419

By:

Lim, Hyeonwook;
Lee, Chang Woo;
Kim, Dasol;
Cho, Mann‐Ho

Publication type:

Article

Evidence of Heat‐Assisted Atomic Migration in GeSe Self‐Selecting Memory at High Operating Current Density.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202300415

By:

Ravsher, Taras;
Garbin, Daniele;
Fantini, Andrea;
Degraeve, Robin;
Clima, Sergiu;
Donadio, Gabriele Luca;
Kundu, Shreya;
Hody, Hubert;
Devulder, Wouter;
Potoms, Goedele;
Peissker, Tobias;
Nyns, Laura;
Van Houdt, Jan;
Afanas'ev, Valeri;
Belmonte, Attilio;
Kar, Gouri Sankar

Publication type:

Article

Thickness‐Dependent Bandgap and Atomic Structure in Elemental Tellurium Films.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202300414

By:

Sun, Yuting;
Gotoh, Tamihiro;
Li, Bowen;
Li, Huanglong;
Zhu, Min

Publication type:

Article

Excellent Reliability Characteristics of Ovonic Threshold Switch Device with Higher‐Temperature Forming Technique.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202300412

By:

Lee, Jangseop;
Ban, Sanghyun;
Seo, Yoori;
Kim, Dongmin;
Hwang, Hyunsang

Publication type:

Article

Investigation of Phase Segregation Dynamics in Ge‐Rich GST Thin Films by In Situ X‐Ray Fluorescence Mapping.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202300408

By:

Fernandes, Thomas;
Texier, Michael;
Hans, Philipp;
Mocuta, Cristian;
Comby‐Dassonneville, Solène;
Navarro, Gabriele;
Jeannot, Simon;
Cornelius, Thomas W.;
Han, Madeleine;
Ruiz, Jaime Segura;
Rosenthal, Martin;
le Friec, Yannick;
Simola, Roberto;
Thomas, Olivier

Publication type:

Article

Quantitative Scanning Transmission Electron Microscopy–High‐Angle‐Annular Dark‐Field Study of the Structure of Pseudo‐2D Sb2Te3 Films Grown by (Quasi) Van der Waals Epitaxy.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202300402

By:

Sever, Vitomir;
Bernier, Nicolas;
Térébénec, Damien;
Sabbione, Chiara;
Paterson, Jessy;
Castioni, Florian;
Quéméré, Patrick;
Jannaud, Audrey;
Rouvière, Jean‐Luc;
Roussel, Hervé;
Raty, Jean‐Yves;
Hippert, Françoise;
Noé, Pierre

Publication type:

Article

Investigating the Polarity Dependence of Multilevel Cell Operation in Conventional Mushroom Phase‐Change Memory Cells.

Published in:

Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 10, p. 1, doi. 10.1002/pssr.202300374

By:

Yadav, Aakash;
Lim, Dong-Hyeok;
Jeong, Hongsik

Publication type:

Article

Works matching IS 18626254 AND DT 2024 AND VI 18 AND IP 10

Masthead.

Encapsulation Effects on Ge‐Rich GeSbTe Phase‐Change Materials at High Temperature.

Phase‐Change and Ovonic Materials (fifth edition).

Optical Properties of GeSe<sub>1−x</sub>Te<sub>x</sub> Chalcogenide Materials Promising for on‐Chip Low and Ultra‐Low Loss Reconfigurable Photonics and Nonlinear Devices.

Atomic Structure and Dynamics of Unusual and Wide‐Gap Phase‐Change Chalcogenides: A GeTe<sub>2</sub> Case.

Modified Electronic Structure of Amorphous Mn–Si–Te for Ovonic Threshold Switch Application: Improved Thermal Stability by the Formation of Mn–Te Bonding.

Study of Ge‐Rich Ge–Sb–Te Device‐Dependent Segregation for Industrial Grade Embedded Phase‐Change Memory.

Encapsulation Effects on Ge‐Rich GeSbTe Phase‐Change Materials at High Temperature.

Programming Operations Analysis and Statistics in One Selector and One Memory Ovonic Threshold Switching + Phase‐Change Memory Double‐Patterned Self‐Aligned Structure.

Low RESET Current Mushroom‐Cell Phase‐Change Memory Using Fiber‐Textured Homostructure GeSbTe on Highly Oriented Seed Layer.

Flexible Electronics Applications of Ge‐Rich and Se‐Substituted Phase‐Change Materials in Nonvolatile Memories.

Crystallization of Amorphous N‐Doped Ge‐Rich GST Layers Deposited on a Polycrystalline GST Template.

Developing GeSbTe Superlattice Through Understanding of the Reversible Phases and Engineering Its Interspaces.

Evidence of Heat‐Assisted Atomic Migration in GeSe Self‐Selecting Memory at High Operating Current Density.

Thickness‐Dependent Bandgap and Atomic Structure in Elemental Tellurium Films.

Excellent Reliability Characteristics of Ovonic Threshold Switch Device with Higher‐Temperature Forming Technique.

Investigation of Phase Segregation Dynamics in Ge‐Rich GST Thin Films by In Situ X‐Ray Fluorescence Mapping.

Quantitative Scanning Transmission Electron Microscopy–High‐Angle‐Annular Dark‐Field Study of the Structure of Pseudo‐2D Sb<sub>2</sub>Te<sub>3</sub> Films Grown by (Quasi) Van der Waals Epitaxy.

Investigating the Polarity Dependence of Multilevel Cell Operation in Conventional Mushroom Phase‐Change Memory Cells.