Masthead.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 10, p. 1, doi. 10.1002/pssr.202270020
- Publication type:
- Article
Works matching IS 18626254 AND DT 2022 AND VI 16 AND IP 10
Results: 13
1
2
Ferroelectricity Improvement in Ultra‐Thin Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Capacitors by the Insertion of a Ti Interfacial Layer.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 10, p. 1, doi. 10.1002/pssr.202270019
- By:
- Publication type:
- Article
3
(Hf,Zr)O<sub>2</sub>‐based Ferroelectrics: From Fundamentals to Applications.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 10, p. 1, doi. 10.1002/pssr.202200324
- By:
- Publication type:
- Article
4
Review on the Microstructure of Ferroelectric Hafnium Oxides.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 10, p. 1, doi. 10.1002/pssr.202200168
- By:
- Publication type:
- Article
5
Accurate First‐Principles Treatment of the High‐Temperature Cubic Phase of Hafnia.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 10, p. 1, doi. 10.1002/pssr.202100642
- By:
- Publication type:
- Article
6
Characteristics of Low‐Energy Phases of Hafnia and Zirconia from Density Functional Theory Calculations.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 10, p. 1, doi. 10.1002/pssr.202100636
- By:
- Publication type:
- Article
7
Insertion of an Ultrathin Interfacial Aluminum Layer for the Realization of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 10, p. 1, doi. 10.1002/pssr.202100585
- By:
- Publication type:
- Article
8
Ferroelectricity Improvement in Ultra‐Thin Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Capacitors by the Insertion of a Ti Interfacial Layer.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 10, p. 1, doi. 10.1002/pssr.202100583
- By:
- Publication type:
- Article
9
From Doping to Dilution: Local Chemistry and Collective Interactions of La in HfO<sub>2</sub>.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 10, p. 1, doi. 10.1002/pssr.202100582
- By:
- Publication type:
- Article
10
Fabrication of Ferroelectric Gate Thin‐Film Transistors with a Lanthanum‐Doped HZO Gate Insulator and Indium‐Tin‐Oxide Channel via a Solution Process.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 10, p. 1, doi. 10.1002/pssr.202100581
- By:
- Publication type:
- Article
11
No‐Heating Deposition of 1‐μm‐Thick Y‐Doped HfO<sub>2</sub> Ferroelectric Films with Good Ferroelectric and Piezoelectric Properties by Radio Frequency Magnetron Sputtering Method.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 10, p. 1, doi. 10.1002/pssr.202100574
- By:
- Publication type:
- Article
12
Assessment of Back‐End‐of‐Line Compatibility of Sputtered HfO<sub>2</sub>‐Based Ferroelectrics.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 10, p. 1, doi. 10.1002/pssr.202100572
- By:
- Publication type:
- Article
13
Vertical‐Pillar Ferroelectric Field‐Effect‐Transistor Memory.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 10, p. 1, doi. 10.1002/pssr.202100532
- By:
- Publication type:
- Article