Works matching IS 18626254 AND DT 2021 AND VI 15 AND IP 5

Results: 30

Electric‐Field‐Induced Ferroelectricity in 5%Y‐doped Hf0.5Zr0.5O2: Transformation from the Paraelectric Tetragonal Phase to the Ferroelectric Orthorhombic Phase.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202000589

By:

Shimizu, Takao;
Tashiro, Yuki;
Mimura, Takanori;
Kiguchi, Takanori;
Shiraishi, Takahisa;
Konnno, Toyohiko J.;
Sakata, Osami;
Funakubo, Hiroshi

Publication type:

Article

On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100086

By:

Lederer, Maximilian;
Olivo, Ricardo;
Lehninger, David;
Abdulazhanov, Sukhrob;
Kämpfe, Thomas;
Kirbach, Sven;
Mart, Clemens;
Seidel, Konrad;
Eng, Lukas M.

Publication type:

Article

Atomistic Understanding of the Ferroelectric Properties of a Wurtzite‐Structure (AlN)n/(ScN)m Superlattice.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100009

By:

Ye, Kun Hee;
Han, Gyuseung;
Yeu, In Won;
Hwang, Cheol Seong;
Choi, Jung-Hae

Publication type:

Article

Electric‐Field‐Induced Ferroelectricity in 5%Y‐doped Hf0.5Zr0.5O2: Transformation from the Paraelectric Tetragonal Phase to the Ferroelectric Orthorhombic Phase.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202000589

By:

Shimizu, Takao;
Tashiro, Yuki;
Mimura, Takanori;
Kiguchi, Takanori;
Shiraishi, Takahisa;
Konnno, Toyohiko J.;
Sakata, Osami;
Funakubo, Hiroshi

Publication type:

Article

On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100086

By:

Lederer, Maximilian;
Olivo, Ricardo;
Lehninger, David;
Abdulazhanov, Sukhrob;
Kämpfe, Thomas;
Kirbach, Sven;
Mart, Clemens;
Seidel, Konrad;
Eng, Lukas M.

Publication type:

Article

Masthead.

Published in:: Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202170021
Publication type:: Article

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100028

By:

Kim, Hyo Jeong;
An, Yonghwan;
Jung, Yong Chan;
Mohan, Jaidah;
Yoo, Jeong Gyu;
Kim, Young In;
Hernandez-Arriaga, Heber;
Kim, Harrison Sejoon;
Kim, Jiyoung;
Kim, Si Joon

Publication type:

Article

Atomistic Understanding of the Ferroelectric Properties of a Wurtzite‐Structure (AlN)n/(ScN)m Superlattice.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100009

By:

Ye, Kun Hee;
Han, Gyuseung;
Yeu, In Won;
Hwang, Cheol Seong;
Choi, Jung-Hae

Publication type:

Article

Emerging Fluorite‐ and Wurtzite‐Type Ferroelectrics: From (Hf,Zr)O2 to AlN and Related Materials.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100201

By:

Barabash, Sergey V.;
Fichtner, Simon;
Park, Min Hyuk;
Schenk, Tony

Publication type:

Article

A Segmented‐Target Sputtering Process for Growth of Sub‐50 nm Ferroelectric Scandium–Aluminum–Nitride Films with Composition and Stress Tuning.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100087

By:

Rassay, Sushant;
Hakim, Faysal;
Li, Chao;
Forgey, Christian;
Choudhary, Nitin;
Tabrizian, Roozbeh

Publication type:

Article

On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100086

By:

Lederer, Maximilian;
Olivo, Ricardo;
Lehninger, David;
Abdulazhanov, Sukhrob;
Kämpfe, Thomas;
Kirbach, Sven;
Mart, Clemens;
Seidel, Konrad;
Eng, Lukas M.

Publication type:

Article

Ferroelectric Hf0.5Zr0.5O2 Thin Films Crystallized by Pulsed Laser Annealing.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100082

By:

Volodina, Natalia;
Dmitriyeva, Anna;
Chouprik, Anastasia;
Gatskevich, Elena;
Zenkevich, Andrei

Publication type:

Article

New Low‐Energy Crystal Structures in ZrO2 and HfO2.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100074

By:

Kersch, Alfred;
Falkowski, Max

Publication type:

Article

A Novel Combinatorial Approach to the Ferroelectric Properties in HfxZr1−xO2 Deposited by Atomic Layer Deposition.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100053

By:

Jung, Yong Chan;
Mohan, Jaidah;
Hwang, Su Min;
Kim, Jin-Hyun;
Le, Dan N.;
Sahota, Akshay;
Kim, Namhoon;
Hernandez-Arriaga, Heber;
Veyan, Jean-Francois;
Kim, Harrison Sejoon;
Kim, Si Joon;
Choi, Rino;
Kim, Jiyoung

Publication type:

Article

Understanding Reproducibility of Sputter‐Deposited Metastable Ferroelectric Wurtzite Al0.6Sc0.4N Films Using In Situ Optical Emission Spectrometry.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100043

By:

Drury, Daniel;
Yazawa, Keisuke;
Mis, Allison;
Talley, Kevin;
Zakutayev, Andriy;
Brennecka, Geoff L.

Publication type:

Article

Ferroelectric Aluminum Scandium Nitride Thin Film Bulk Acoustic Resonators with Polarization‐Dependent Operating States.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100034

By:

Wang, Jialin;
Zheng, Yue;
Ansari, Azadeh

Publication type:

Article

Ferroelectric La‐Doped ZrO2/HfxZr1−xO2 Bilayer Stacks with Enhanced Endurance.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100033

By:

Popovici, Mihaela;
Walke, Amey M.;
Banerjee, Kaustuv;
Ronchi, Nicolo;
Meersschaut, Johan;
Celano, Umberto;
McMitchell, Sean;
Spampinato, Valentina;
Franquet, Alexis;
Favia, Paola;
Swerts, Johan;
Van den Bosch, Geert;
Van Houdt, Jan

Publication type:

Article

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100028

By:

Kim, Hyo Jeong;
An, Yonghwan;
Jung, Yong Chan;
Mohan, Jaidah;
Yoo, Jeong Gyu;
Kim, Young In;
Hernandez-Arriaga, Heber;
Kim, Harrison Sejoon;
Kim, Jiyoung;
Kim, Si Joon

Publication type:

Article

Chemical Stability of IrO2 Top Electrodes in Ferroelectric Hf0.5Zr0.5O2‐Based Metal–Insulator–Metal Structures: The Impact of Annealing Gas.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100027

By:

Szyjka, Thomas;
Baumgarten, Lutz;
Mittmann, Terence;
Matveyev, Yury;
Schlueter, Christoph;
Mikolajick, Thomas;
Schroeder, Uwe;
Müller, Martina

Publication type:

Article

An Overview of Ferroelectric Hafnia and Epitaxial Growth.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100025

By:

Cao, Jing;
Shi, Shu;
Zhu, Yao;
Chen, Jingsheng

Publication type:

Article

Aging in Ferroelectric Si‐Doped Hafnium Oxide Thin Films.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100023

By:

Mart, Clemens;
Kohlenbach, Nico-Dominik;
Kühnel, Kati;
Eßlinger, Sophia;
Czernohorsky, Malte;
Ali, Tarek;
Weinreich, Wenke;
Eng, Lukas M.

Publication type:

Article

Effect of Hydrogen on Hafnium Zirconium Oxide Fabricated by Atomic Layer Deposition Using H2O2 Oxidant.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100020

By:

Kim, Hyoungkyu;
Yun, Seokjung;
Kim, Tae Ho;
Kim, Hoon;
Bae, Changdeuck;
Jeon, Sanghun;
Hong, Seungbum

Publication type:

Article

High‐Performance and High‐Endurance HfO2‐Based Ferroelectric Field‐Effect Transistor Memory with a Spherical Recess Channel.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100018

By:

Kim, Taeho;
Hwang, Junghyeon;
Kim, Giuk;
Jung, Minhyun;
Jeon, Sanghun

Publication type:

Article

Ferroelectric, Analog Resistive Switching in Back‐End‐of‐Line Compatible TiN/HfZrO4/TiOx Junctions.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202000524

By:

Bégon-Lours, Laura;
Halter, Mattia;
Popoff, Youri;
Offrein, Bert Jan

Publication type:

Article

Atomistic Understanding of the Ferroelectric Properties of a Wurtzite‐Structure (AlN)n/(ScN)m Superlattice.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100009

By:

Ye, Kun Hee;
Han, Gyuseung;
Yeu, In Won;
Hwang, Cheol Seong;
Choi, Jung-Hae

Publication type:

Article

In Situ Characterization of Ferroelectric HfO2 During Rapid Thermal Annealing.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202000598

By:

Narasimhan, Vijay Kris;
McBriarty, Martin E.;
Passarello, Donata;
Adinolfi, Valerio;
Toney, Michael F.;
Mehta, Apurva;
Littau, Karl A.

Publication type:

Article

Electric‐Field‐Induced Ferroelectricity in 5%Y‐doped Hf0.5Zr0.5O2: Transformation from the Paraelectric Tetragonal Phase to the Ferroelectric Orthorhombic Phase.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202000589

By:

Shimizu, Takao;
Tashiro, Yuki;
Mimura, Takanori;
Kiguchi, Takanori;
Shiraishi, Takahisa;
Konnno, Toyohiko J.;
Sakata, Osami;
Funakubo, Hiroshi

Publication type:

Article

Sub‐Microsecond Polarization Switching in (Al,Sc)N Ferroelectric Capacitors Grown on Complementary Metal–Oxide–Semiconductor‐Compatible Aluminum Electrodes.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202000575

By:

Wang, Dixiong;
Musavigharavi, Pariasadat;
Zheng, Jeffrey;
Esteves, Giovanni;
Liu, Xiwen;
Fiagbenu, Merrilyn Mercy Adzo;
Stach, Eric A.;
Jariwala, Deep;
Olsson, Roy H.

Publication type:

Article

Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf0.5Zr0.5O2 Films.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202100012

By:

Mittmann, Terence;
Szyjka, Thomas;
Alex, Hsain;
Istrate, Marian Cosmin;
Lomenzo, Patrick D.;
Baumgarten, Lutz;
Müller, Martina;
Jones, Jacob L.;
Pintilie, Lucian;
Mikolajick, Thomas;
Schroeder, Uwe

Publication type:

Article

HfO2‐Based Ferroelectrics Applications in Nanoelectronics.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 5, p. 1, doi. 10.1002/pssr.202000521

By:

Dragoman, Mircea;
Aldrigo, Martino;
Dragoman, Daniela;
Iordanescu, Sergiu;
Dinescu, Adrian;
Modreanu, Mircea

Publication type:

Article

Works matching IS 18626254 AND DT 2021 AND VI 15 AND IP 5

Electric‐Field‐Induced Ferroelectricity in 5%Y‐doped Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>: Transformation from the Paraelectric Tetragonal Phase to the Ferroelectric Orthorhombic Phase.

On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide.

Atomistic Understanding of the Ferroelectric Properties of a Wurtzite‐Structure (AlN)<sub>n</sub>/(ScN)<sub>m</sub> Superlattice.

Electric‐Field‐Induced Ferroelectricity in 5%Y‐doped Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>: Transformation from the Paraelectric Tetragonal Phase to the Ferroelectric Orthorhombic Phase.

On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide.

Masthead.

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications.

Atomistic Understanding of the Ferroelectric Properties of a Wurtzite‐Structure (AlN)<sub>n</sub>/(ScN)<sub>m</sub> Superlattice.

Emerging Fluorite‐ and Wurtzite‐Type Ferroelectrics: From (Hf,Zr)O<sub>2</sub> to AlN and Related Materials.

A Segmented‐Target Sputtering Process for Growth of Sub‐50 nm Ferroelectric Scandium–Aluminum–Nitride Films with Composition and Stress Tuning.

On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide.

Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films Crystallized by Pulsed Laser Annealing.

New Low‐Energy Crystal Structures in ZrO<sub>2</sub> and HfO<sub>2</sub>.

A Novel Combinatorial Approach to the Ferroelectric Properties in Hf<sub>x</sub>Zr<sub>1−x</sub>O<sub>2</sub> Deposited by Atomic Layer Deposition.

Understanding Reproducibility of Sputter‐Deposited Metastable Ferroelectric Wurtzite Al<sub>0.6</sub>Sc<sub>0.4</sub>N Films Using In Situ Optical Emission Spectrometry.

Ferroelectric Aluminum Scandium Nitride Thin Film Bulk Acoustic Resonators with Polarization‐Dependent Operating States.

Ferroelectric La‐Doped ZrO<sub>2</sub>/Hf<sub>x</sub>Zr<sub>1−x</sub>O<sub>2</sub> Bilayer Stacks with Enhanced Endurance.

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications.

Chemical Stability of IrO<sub>2</sub> Top Electrodes in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>‐Based Metal–Insulator–Metal Structures: The Impact of Annealing Gas.

An Overview of Ferroelectric Hafnia and Epitaxial Growth.

Aging in Ferroelectric Si‐Doped Hafnium Oxide Thin Films.

Effect of Hydrogen on Hafnium Zirconium Oxide Fabricated by Atomic Layer Deposition Using H<sub>2</sub>O<sub>2</sub> Oxidant.

High‐Performance and High‐Endurance HfO<sub>2</sub>‐Based Ferroelectric Field‐Effect Transistor Memory with a Spherical Recess Channel.

Ferroelectric, Analog Resistive Switching in Back‐End‐of‐Line Compatible TiN/HfZrO<sub>4</sub>/TiO<sub>x</sub> Junctions.

Atomistic Understanding of the Ferroelectric Properties of a Wurtzite‐Structure (AlN)<sub>n</sub>/(ScN)<sub>m</sub> Superlattice.

In Situ Characterization of Ferroelectric HfO<sub>2</sub> During Rapid Thermal Annealing.

Electric‐Field‐Induced Ferroelectricity in 5%Y‐doped Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>: Transformation from the Paraelectric Tetragonal Phase to the Ferroelectric Orthorhombic Phase.

Sub‐Microsecond Polarization Switching in (Al,Sc)N Ferroelectric Capacitors Grown on Complementary Metal–Oxide–Semiconductor‐Compatible Aluminum Electrodes.

Impact of Iridium Oxide Electrodes on the Ferroelectric Phase of Thin Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Films.

HfO<sub>2</sub>‐Based Ferroelectrics Applications in Nanoelectronics.