Works matching IS 18626254 AND DT 2019 AND VI 13 AND IP 8

Results: 18

The Effect of Bending Deformation on Charge Transport and Electron Effective Mass of p‐doped GaAs Nanowires.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 8, p. N.PAG, doi. 10.1002/pssr.201900134

By:

Zeng, Lunjie;
Kanne, Thomas;
Nygård, Jesper;
Krogstrup, Peter;
Jäger, Wolfgang;
Olsson, Eva

Publication type:

Article

Masthead.

Published in:: Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 8, p. N.PAG, doi. 10.1002/pssr.201970032
Publication type:: Article

Universal Hall Coefficient Correction in Strongly Coupled Cr‐SiO2 Nanogranular Metals.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 8, p. N.PAG, doi. 10.1002/pssr.201900123

By:

Zheng, Bin;
He, Zhi‐Hao;
Li, Zhi‐Qing

Publication type:

Article

Energy Transfer Under Electrical Excitation and Enhanced Electroluminescence in the Nanolaminate Yb,Er Co‐Doped Al2O3 Films.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 8, p. N.PAG, doi. 10.1002/pssr.201900137

By:

Yang, Yang;
Ouyang, Zhongtao;
Liu, Jianzhao;
Sun, Jiaming

Publication type:

Article

Spin Reversal Mechanism of a Perpendicular Exchange Bias System with an Antiferromagnet Incorporating a Parasitic Ferromagnetism.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 8, p. N.PAG, doi. 10.1002/pssr.201900135

By:

Ye, Shujun;
Shiokawa, Yohei;
Pati, Satya P.;
Sahashi, Masashi

Publication type:

Article

The Effect of Bending Deformation on Charge Transport and Electron Effective Mass of p‐doped GaAs Nanowires.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 8, p. N.PAG, doi. 10.1002/pssr.201900134

By:

Zeng, Lunjie;
Kanne, Thomas;
Nygård, Jesper;
Krogstrup, Peter;
Jäger, Wolfgang;
Olsson, Eva

Publication type:

Article

Impact of Hydrogen‐Rich Silicon Nitride Material Properties on Light‐Induced Lifetime Degradation in Multicrystalline Silicon.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 8, p. N.PAG, doi. 10.1002/pssr.201900201

By:

Bredemeier, Dennis;
Walter, Dominic C.;
Heller, René;
Schmidt, Jan

Publication type:

Article

Memristive Devices and Networks for Brain‐Inspired Computing.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 8, p. N.PAG, doi. 10.1002/pssr.201900029

By:

Zhang, Teng;
Yang, Ke;
Xu, Xiaoyan;
Cai, Yimao;
Yang, Yuchao;
Huang, Ru

Publication type:

Article

Magnetic Conductive Outer Layer in Oxygen‐Deficient TiO2 Single Crystals.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 8, p. N.PAG, doi. 10.1002/pssr.201900160

By:

Zhang, Zhaoting;
Yan, Hong;
Ren, Lixia;
Li, Ming;
Wang, Shuanhu;
Jin, Kexin

Publication type:

Article

Lightweight Composite Microwave Absorbing Materials Based on Graphene Aerogels with Honeycomb Structure.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 8, p. N.PAG, doi. 10.1002/pssr.201900179

By:

Shi, Kouzhong;
Li, Jun;
Wu, You;
Bai, Han;
Hong, Yang;
Zhou, Zhongxiang

Publication type:

Article

Sound Velocities and Elastic Moduli of Phases I and V of Silicon at High Pressures.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 8, p. N.PAG, doi. 10.1002/pssr.201900173

By:

Zhao, Bin;
Xu, Feng;
Belliard, Laurent;
Huang, Haijun;
Perrin, Bernard;
Djemia, Philippe;
Zerr, Andreas

Publication type:

Article

Design of Efficient Type‐II ZnGeN2/In0.16Ga0.84N Quantum Well‐Based Red LEDs.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 8, p. N.PAG, doi. 10.1002/pssr.201900170

By:

Hyot, Bérangère;
Rollès, Mélanie;
Miska, Patrice

Publication type:

Article

Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 8, p. N.PAG, doi. 10.1002/pssr.201900167

By:

Zhang, Yachao;
Su, Kai;
Guo, Rui;
Xu, Shengrui;
Chen, Dazheng;
Zhu, Jiaduo;
Bao, Weimin;
Zhang, Jincheng;
Ning, Jing;
Hao, Yue

Publication type:

Article

High‐Speed Bipolar Switching of Sputtered Ge–Te/Sb–Te Superlattice iPCM with Enhanced Cyclability.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 8, p. N.PAG, doi. 10.1002/pssr.201900105

By:

Mitrofanov, Kirill V.;
Saito, Yuta;
Miyata, Noriyuki;
Fons, Paul;
Kolobov, Alexander V.;
Tominaga, Junji

Publication type:

Article

Self‐Powered X‐Ray Detector Based on All‐Inorganic Perovskite Thick Film with High Sensitivity Under Low Dose Rate.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 8, p. N.PAG, doi. 10.1002/pssr.201900094

By:

Gou, Zongyan;
Huanglong, Sibo;
Ke, Wenjun;
Sun, Hui;
Tian, Haibo;
Gao, Xiuying;
Zhu, Xinghua;
Yang, Dingyu;
Wangyang, Peihua

Publication type:

Article

Memristive Devices and Networks for Brain‐Inspired Computing.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 8, p. N.PAG, doi. 10.1002/pssr.201900029

By:

Zhang, Teng;
Yang, Ke;
Xu, Xiaoyan;
Cai, Yimao;
Yang, Yuchao;
Huang, Ru

Publication type:

Article

Ab‐Initio Investigation of the Band Alignment Between Cu2ZnSnS4 and Different Buffer Materials (Al2ZnO4, CeO2, ZnSnO3).

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 8, p. N.PAG, doi. 10.1002/pssr.201800649

By:

Albar, Arwa;
Schwingenschlögl, Udo

Publication type:

Article

Defect Formation Energies of Interstitial C, Si, and Ge Impurities in β‐Ga2O3.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 8, p. N.PAG, doi. 10.1002/pssr.201800633

By:

Bouzid, Assil;
Pasquarello, Alfredo

Publication type:

Article

Works matching IS 18626254 AND DT 2019 AND VI 13 AND IP 8

The Effect of Bending Deformation on Charge Transport and Electron Effective Mass of p‐doped GaAs Nanowires.

Masthead.

Universal Hall Coefficient Correction in Strongly Coupled Cr‐SiO<sub>2</sub> Nanogranular Metals.

Energy Transfer Under Electrical Excitation and Enhanced Electroluminescence in the Nanolaminate Yb,Er Co‐Doped Al<sub>2</sub>O<sub>3</sub> Films.

Spin Reversal Mechanism of a Perpendicular Exchange Bias System with an Antiferromagnet Incorporating a Parasitic Ferromagnetism.

The Effect of Bending Deformation on Charge Transport and Electron Effective Mass of p‐doped GaAs Nanowires.

Impact of Hydrogen‐Rich Silicon Nitride Material Properties on Light‐Induced Lifetime Degradation in Multicrystalline Silicon.

Memristive Devices and Networks for Brain‐Inspired Computing.

Magnetic Conductive Outer Layer in Oxygen‐Deficient TiO<sub>2</sub> Single Crystals.

Lightweight Composite Microwave Absorbing Materials Based on Graphene Aerogels with Honeycomb Structure.

Sound Velocities and Elastic Moduli of Phases I and V of Silicon at High Pressures.

Design of Efficient Type‐II ZnGeN<sub>2</sub>/In<sub>0.16</sub>Ga<sub>0.84</sub>N Quantum Well‐Based Red LEDs.

Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate.

High‐Speed Bipolar Switching of Sputtered Ge–Te/Sb–Te Superlattice iPCM with Enhanced Cyclability.

Self‐Powered X‐Ray Detector Based on All‐Inorganic Perovskite Thick Film with High Sensitivity Under Low Dose Rate.

Memristive Devices and Networks for Brain‐Inspired Computing.

Ab‐Initio Investigation of the Band Alignment Between Cu<sub>2</sub>ZnSnS<sub>4</sub> and Different Buffer Materials (Al<sub>2</sub>ZnO<sub>4</sub>, CeO<sub>2</sub>, ZnSnO<sub>3</sub>).

Defect Formation Energies of Interstitial C, Si, and Ge Impurities in β‐Ga<sub>2</sub>O<sub>3</sub>.