Works matching IS 18626254 AND DT 2019 AND VI 13 AND IP 5

Results: 23

Two‐Dimensional GaX/SnS2 (X = S, Se) van der Waals Heterostructures for Photovoltaic Application: Heteroatom Doping Strategy to Boost Power Conversion Efficiency.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800565

By:

Wu, Hong‐Yu;
Yang, Ke;
Si, Yuan;
Huang, Wei‐Qing;
Hu, Wangyu;
Huang, Gui‐Fang

Publication type:

Article

Impedance Spectroscopy: A Versatile Technique to Understand Solution‐Processed Optoelectronic Devices (Phys. Status Solidi RRL 5/2019).

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201970024

By:

Ali, Shmshad;
Chang, Shuai;
Imran, Muhammad;
Shi, Qingfan;
Chen, Yu;
Zhong, Haizheng

Publication type:

Article

Observation of Small Polaron and Acoustic Phonon Coupling in Ultrathin La0.7Sr0.3MnO3/SrTiO3 Structures.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800657

By:

Liu, Bo;
Niu, Wei;
Ruan, Xuezhong;
Zhu, Chunhui;
Wang, Xuefeng;
He, Liang;
Liu, Wenqing;
Turcu, Edmond;
Wang, Fengqiu;
Zhang, Rong;
Xu, Yongbing

Publication type:

Article

Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800573

By:

Cheng, Chun‐Hu;
Lin, Ming‐Huei;
Chen, Hsin‐Yu;
Fan, Chia‐Chi;
Liu, Chien;
Hsu, Hsiao‐Hsuan;
Chang, Chun‐Yen

Publication type:

Article

Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties (Phys. Status Solidi RRL 5/2019).

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201970022

By:

Wang, Zhanpeng;
Zhang, Shi‐Rui;
Zhou, Li;
Mao, Jing‐Yu;
Han, Su‐Ting;
Ren, Yi;
Yang, Jia‐Qin;
Wang, Yan;
Zhai, Yongbiao;
Zhou, Ye

Publication type:

Article

Masthead.

Published in:: Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201970023
Publication type:: Article

Erratum to: Nonhydrogenic Exciton Spectrum in Perovskite CH3NH3PbI3 (Phys. Status Solidi RRL 2015, 9, 559–563).

Published in:

2019

By:

Menéndez‐Proupin, Eduardo;
Beltrán Ríos, Carlos L.;
Wahnón, Perla;
Tempelaar, Roel

Publication type:

Correction Notice

Anisotropy Magnetoelectric Coupling in NiFe2O4/Bi5Ti3FeO15 0‐3 Type Nanocomposite Films.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800691

By:

Alyeksyei, Ariunbayasgalan;
Jiang, Ning;
Jiang, Yaoxiang;
Lu, Qingshan;
Zhao, Shifeng

Publication type:

Article

Strain Enhanced Visible–Ultraviolet Absorption of Blue Phosphorene/MoX2 (X = S,Se) Heterolayers.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800659

By:

Gu, Di;
Tao, Xiaoma;
Chen, Hongmei;
Ouyang, Yifang;
Zhu, Weiling;
Peng, Qing;
Du, Yong

Publication type:

Article

Nickel Interaction with Vacancy‐Type Radiation Defects in Silicon.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800651

By:

Yarykin, Nikolai;
Lastovskii, Stanislau;
Weber, Jörg

Publication type:

Article

Impedance Spectroscopy: A Versatile Technique to Understand Solution‐Processed Optoelectronic Devices.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800580

By:

Ali, Shmshad;
Chang, Shuai;
Imran, Muhammad;
Shi, Qingfan;
Chen, Yu;
Zhong, Haizheng

Publication type:

Article

Efficient CuInS2/ZnS Quantum Dots Light‐Emitting Diodes in Deep Red Region Using PEIE Modified ZnO Electron Transport Layer.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800575

By:

Yuan, Qilin;
Guan, Xin;
Xue, Xulan;
Han, Dengbao;
Zhong, Haizheng;
Zhang, Han;
Zhang, Hanzhuang;
Ji, Wenyu

Publication type:

Article

Defect State Analysis in Ion‐Irradiated Amorphous‐Silicon Heterojunctions by HAXPES.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800655

By:

Lee, Min‐I;
Defresne, Alice;
Plantevin, Olivier;
Ceolin, Denis;
Rueff, Jean‐Pascal;
Roca i Cabarrocas, Pere;
Tejeda, Antonio

Publication type:

Article

Impact of Outer Shell Structure and Localization Effects on Charge Carrier Dynamics in GaAs/(In,Ga)As Nanowire Core–Shell Quantum Wells.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800527

By:

Küpers, Hanno;
Corfdir, Pierre;
Lewis, Ryan B.;
Flissikowski, Timur;
Tahraoui, Abbes;
Grahn, Holger T.;
Brandt, Oliver;
Geelhaar, Lutz

Publication type:

Article

Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800644

By:

Wang, Zhanpeng;
Zhang, Shi‐Rui;
Zhou, Li;
Mao, Jing‐Yu;
Han, Su‐Ting;
Ren, Yi;
Yang, Jia‐Qin;
Wang, Yan;
Zhai, Yongbiao;
Zhou, Ye

Publication type:

Article

Experimental Observation of Bound States of 2D Dirac Electrons at Surface Steps of the Topological Insulator Bi2Se3.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800617

By:

Fedotov, Nikolai;
Zaitsev‐Zotov, Sergei

Publication type:

Article

Inelastic Spin‐Wave Scattering by Bloch Domain Wall Flexure Oscillations.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800589

By:

Dadoenkova, Nataliya N.;
Dadoenkova, Yuliya S.;
Lyubchanskii, Igor L.;
Krawczyk, Maciej;
Guslienko, Konstantin Y.

Publication type:

Article

Effect of the Annealing Temperature of the Seed Layer on the Following Main Layer in Atomic‐Layer‐Deposited SrTiO3 Thin Films.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800557

By:

Kim, Sang Hyeon;
Lee, Woongkyu;
An, Cheol Hyun;
Kim, Dong‐Gun;
Kwon, Dae Seon;
Cho, Seong Tak;
Cha, Soon Hyung;
Lim, Jun Il;
Hwang, Cheol Seong

Publication type:

Article

Mechanism Behind the Easy Exfoliation of Ga2O3 Ultra‐Thin Film Along (100) Surface.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800554

By:

Barman, Sajib K.;
Huda, Muhammad N.

Publication type:

Article

Recent Progress of Flexible Perovskite Solar Cells.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800566

By:

Xie, Haixia;
Yin, Xingtian;
Guo, Yuxiao;
Liu, Jie;
Que, Wenxiu;
Wang, Gangfeng

Publication type:

Article

Spatially Uniform Shallow Trap Distribution in an Ultrathin Organic Transistor.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800486

By:

Hoffman, Benjamin C.;
Pazoki, Sara;
Apperson, Aubrey;
Dougherty, Daniel B.

Publication type:

Article

A New Family of Two‐Dimensional Topological Materials: CdX (X = F, Cl, Br, and I).

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800466

By:

Yi, Xiao;
Wang, Wei;
Zhou, Pan;
Zou, Zheng Chun;
Sun, Li Zhong

Publication type:

Article

Electric‐Field Control of Dirac Two‐Dimensional Electron Gas in PbTe/CdTe Heterostructures.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800551

By:

Zhang, Le;
Shu, Tianyu;
Wu, Huizhen;
Ye, Zhizhen;
Zhu, Liping

Publication type:

Article

Works matching IS 18626254 AND DT 2019 AND VI 13 AND IP 5

Two‐Dimensional GaX/SnS<sub>2</sub> (X = S, Se) van der Waals Heterostructures for Photovoltaic Application: Heteroatom Doping Strategy to Boost Power Conversion Efficiency.

Impedance Spectroscopy: A Versatile Technique to Understand Solution‐Processed Optoelectronic Devices (Phys. Status Solidi RRL 5/2019).

Observation of Small Polaron and Acoustic Phonon Coupling in Ultrathin La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub>/SrTiO<sub>3</sub> Structures.

Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors.

Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties (Phys. Status Solidi RRL 5/2019).

Masthead.

Erratum to: Nonhydrogenic Exciton Spectrum in Perovskite CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> (Phys. Status Solidi RRL 2015, 9, 559–563).

Anisotropy Magnetoelectric Coupling in NiFe<sub>2</sub>O<sub>4</sub>/Bi<sub>5</sub>Ti<sub>3</sub>FeO<sub>15</sub> 0‐3 Type Nanocomposite Films.

Strain Enhanced Visible–Ultraviolet Absorption of Blue Phosphorene/MoX<sub>2</sub> (X = S,Se) Heterolayers.

Nickel Interaction with Vacancy‐Type Radiation Defects in Silicon.

Impedance Spectroscopy: A Versatile Technique to Understand Solution‐Processed Optoelectronic Devices.

Efficient CuInS<sub>2</sub>/ZnS Quantum Dots Light‐Emitting Diodes in Deep Red Region Using PEIE Modified ZnO Electron Transport Layer.

Defect State Analysis in Ion‐Irradiated Amorphous‐Silicon Heterojunctions by HAXPES.

Impact of Outer Shell Structure and Localization Effects on Charge Carrier Dynamics in GaAs/(In,Ga)As Nanowire Core–Shell Quantum Wells.

Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties.

Experimental Observation of Bound States of 2D Dirac Electrons at Surface Steps of the Topological Insulator Bi<sub>2</sub>Se<sub>3</sub>.

Inelastic Spin‐Wave Scattering by Bloch Domain Wall Flexure Oscillations.

Effect of the Annealing Temperature of the Seed Layer on the Following Main Layer in Atomic‐Layer‐Deposited SrTiO<sub>3</sub> Thin Films.

Mechanism Behind the Easy Exfoliation of Ga<sub>2</sub>O<sub>3</sub> Ultra‐Thin Film Along (100) Surface.

Recent Progress of Flexible Perovskite Solar Cells.

Spatially Uniform Shallow Trap Distribution in an Ultrathin Organic Transistor.

A New Family of Two‐Dimensional Topological Materials: CdX (X = F, Cl, Br, and I).

Electric‐Field Control of Dirac Two‐Dimensional Electron Gas in PbTe/CdTe Heterostructures.