Works matching IS 18626254 AND DT 2014 AND VI 8 AND IP 4

Results: 22

Cover Picture: Ab-initio calculations and structural studies of (SiTe)2(Sb2Te3) n ( n: 1, 2, 4 and 6) phase-change superlattice films (Phys. Status Solidi RRL 4/2014).

Published in:

2014

By:

Saito, Y.;
Tominaga, J.;
Fons, P.;
Kolobov, A. V.;
Nakano, T.

Publication type:

Editorial

Dopant profiling in silicon nanowires measured by scanning capacitance microscopy.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 4, p. n/a, doi. 10.1002/pssr.201409041

By:

Bassani, Franck;
Periwal, Priyanka;
Salem, Bassem;
Chevalier, Nicolas;
Mariolle, Denis;
Audoit, Guillaume;
Gentile, Pascal;
Baron, Thierry

Publication type:

Article

Solid-phase epitaxy of InO x N y alloys via thermal oxidation of InN films on yttria-stabilized zirconia.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 4, p. n/a, doi. 10.1002/pssr.201400007

By:

Kobayashi, Atsushi;
Itoh, Takeki;
Ohta, Jitsuo;
Oshima, Masaharu;
Fujioka, Hiroshi

Publication type:

Article

Saturated low-temperature conductivity in ultrafast semiconductor nanocomposites.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 4, p. n/a, doi. 10.1002/pssr.201308326

By:

Zhang, W.;
Martin, M.;
Brown, E. R.

Publication type:

Article

Strain control in germanium nanowires: the use of a silicon nitride shell.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 4, p. n/a, doi. 10.1002/pssr.201409050

By:

Dupré, Ludovic;
Buttard, Denis;
Gentile, Pascal;
Benoit à la Guillaume, Quentin;
Gorisse, Thérèse;
Renevier, Hubert

Publication type:

Article

Mechanical properties and structures of bulk nanomaterials based on carbon nanopolymorphs.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 4, p. n/a, doi. 10.1002/pssr.201409063

By:

Baimova, Julia A.;
Liu, Bo;
Dmitriev, Sergey V.;
Zhou, Kun

Publication type:

Article

Recent and forthcoming publications in pss: Phys. Status Solidi RRL 4/2014.

Published in:: 2014
Publication type:: Editorial

Annealing of gold nanoparticles on GaP(111)B: initial stage of GaP nanowire growth.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 4, p. n/a, doi. 10.1002/pssr.201409014

By:

Eliáš, Peter;
Hasenöhrl, Stanislav;
Laurencíková, Agáta;
Rosová, Alica;
Novák, Jozef

Publication type:

Article

Topological phases of silicene and germanene in an external magnetic field: Quantitative results.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 4, p. n/a, doi. 10.1002/pssr.201409025

By:

Singh, N.;
Schwingenschlögl, U.

Publication type:

Article

Double-layer channel structure based ZnO thin-film transistor grown by atomic layer deposition.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 4, p. n/a, doi. 10.1002/pssr.201409044

By:

Ahn, Cheol Hyoun;
Kim, So Hee;
Cho, Sung Woon;
Yun, Myeong Gu;
Cho, Hyung Koun

Publication type:

Article

Contents: Phys. Status Solidi RRL 4/2014.

Published in:: 2014
Publication type:: Editorial

Tin - an unlikely ally for silicon field effect transistors?

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 4, p. n/a, doi. 10.1002/pssr.201308300

By:

Hussain, Aftab M.;
Fahad, Hossain M.;
Singh, Nirpendra;
Sevilla, Galo A. Torres;
Schwingenschlögl, Udo;
Hussain, Muhammad M.

Publication type:

Article

Thermoelectric properties of unoxidized graphene/Bi2Te2.7Se0.3 composites synthesized by exfoliation/re-assembly method.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 4, p. n/a, doi. 10.1002/pssr.201308321

By:

Kim, Jin Il;
Lee, Eun Sil;
Kim, Jong‐Young;
Choi, Soon‐Mok;
Lee, Kyu Hyoung;
Seo, Won‐Seon

Publication type:

Article

Issue Information: Phys. Status Solidi RRL 4/2014.

Published in:: 2014
Publication type:: Editorial

Thermal oxidation and facet-formation mechanisms of Si nanowires.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 4, p. n/a, doi. 10.1002/pssr.201308280

By:

Kioseoglou, J.;
Komninou, Ph.;
Zervos, M.

Publication type:

Article

AgInS2-ZnS nanocrystals: Evidence of bistable states using light-induced electron paramagnetic resonance and photoluminescence.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 4, p. n/a, doi. 10.1002/pssr.201308329

By:

Nobre, Sónia S.;
Renard, Olivier;
Lombard, Christian;
Chevallier, Théo;
Pépin‐Donat, Brigitte;
Le Blevennec, Gilles

Publication type:

Article

Wire metamaterial based on semiconductor matrices.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 4, p. n/a, doi. 10.1002/pssr.201409060

By:

Atrashchenko, A.;
Nashchekin, A.;
Mitrofanov, M.;
Ulin, V. P.;
Evtikhiev, V. P.

Publication type:

Article

Ab-initio calculations and structural studies of (SiTe)2(Sb2Te3) n ( n: 1, 2, 4 and 6) phase-change superlattice films.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 4, p. n/a, doi. 10.1002/pssr.201409013

By:

Saito, Y.;
Tominaga, J.;
Fons, P.;
Kolobov, A. V.;
Nakano, T.

Publication type:

Article

Formation of three-dimensional GaAs microstructures by combination of wet and metal-assisted chemical etching.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 4, p. n/a, doi. 10.1002/pssr.201409046

By:

Lee, A Ri;
Kim, Jungkil;
Choi, Suk‐Ho;
Shin, Jae Cheol

Publication type:

Article

Back Cover: Tin - an unlikely ally for silicon field effect transistors? (Phys. Status Solidi RRL 4/2014).

Published in:

2014

By:

Hussain, Aftab M.;
Fahad, Hossain M.;
Singh, Nirpendra;
Sevilla, Galo A. Torres;
Schwingenschlögl, Udo;
Hussain, Muhammad M.

Publication type:

Editorial

Stress relaxation of GaN microstructures on a graphene-buffered Al2O3 substrate.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 4, p. n/a, doi. 10.1002/pssr.201400001

By:

Mun, Dae‐Hwa;
Bae, Hyojung;
Bae, Sukang;
Lee, Hyunjung;
Ha, Jun‐Seok;
Lee, Sanghyun

Publication type:

Article

Information for authors: Phys. Status Solidi RRL 4/2014.

Published in:: 2014
Publication type:: Editorial

Works matching IS 18626254 AND DT 2014 AND VI 8 AND IP 4

Cover Picture: Ab-initio calculations and structural studies of (SiTe)<sub>2</sub>(Sb<sub>2</sub>Te<sub>3</sub>) <sub>n</sub> ( n: 1, 2, 4 and 6) phase-change superlattice films (Phys. Status Solidi RRL 4/2014).

Dopant profiling in silicon nanowires measured by scanning capacitance microscopy.

Solid-phase epitaxy of InO <sub>x</sub> N <sub>y</sub> alloys via thermal oxidation of InN films on yttria-stabilized zirconia.

Saturated low-temperature conductivity in ultrafast semiconductor nanocomposites.

Strain control in germanium nanowires: the use of a silicon nitride shell.

Mechanical properties and structures of bulk nanomaterials based on carbon nanopolymorphs.

Recent and forthcoming publications in pss: Phys. Status Solidi RRL 4/2014.

Annealing of gold nanoparticles on GaP(111)B: initial stage of GaP nanowire growth.

Topological phases of silicene and germanene in an external magnetic field: Quantitative results.

Double-layer channel structure based ZnO thin-film transistor grown by atomic layer deposition.

Contents: Phys. Status Solidi RRL 4/2014.

Tin - an unlikely ally for silicon field effect transistors?

Thermoelectric properties of unoxidized graphene/Bi<sub>2</sub>Te<sub>2.7</sub>Se<sub>0.3</sub> composites synthesized by exfoliation/re-assembly method.

Issue Information: Phys. Status Solidi RRL 4/2014.

Thermal oxidation and facet-formation mechanisms of Si nanowires.

AgInS<sub>2</sub>-ZnS nanocrystals: Evidence of bistable states using light-induced electron paramagnetic resonance and photoluminescence.

Wire metamaterial based on semiconductor matrices.

Ab-initio calculations and structural studies of (SiTe)<sub>2</sub>(Sb<sub>2</sub>Te<sub>3</sub>) <sub>n</sub> ( n: 1, 2, 4 and 6) phase-change superlattice films.

Formation of three-dimensional GaAs microstructures by combination of wet and metal-assisted chemical etching.

Back Cover: Tin - an unlikely ally for silicon field effect transistors? (Phys. Status Solidi RRL 4/2014).

Stress relaxation of GaN microstructures on a graphene-buffered Al<sub>2</sub>O<sub>3</sub> substrate.

Information for authors: Phys. Status Solidi RRL 4/2014.