Works matching IS 18626254 AND DT 2013 AND VI 7 AND IP 10

Results: 38

First principles studies of structural, electrical and magnetic properties of semiconductor nanowires.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 739, doi. 10.1002/pssr.201307234

By:

Galicka, Marta;
Buczko, Ryszard;
Kacman, Perla;
Lima, Erika N.;
Schmidt, Tome M.;
Shtrikman, Hadas

Publication type:

Article

Study of radial growth in patterned self-catalyzed GaAs nanowire arrays by gas source molecular beam epitaxy.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 845, doi. 10.1002/pssr.201307142

By:

Gibson, Sandra;
LaPierre, Ray

Publication type:

Article

Zincblende-to-wurtzite interface improvement by group III loading in Au-seeded GaAs nanowires.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 855, doi. 10.1002/pssr.201307251

By:

Jacobsson, Daniel;
Lehmann, Sebastian;
Dick, Kimberly A.

Publication type:

Article

Contents: Phys. Status Solidi RRL 10/2013.

Published in:: Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 685, doi. 10.1002/pssr.201370461
Publication type:: Article

Radial composition of single InGaN nanowires: a combined study by EDX, Raman spectroscopy, and X-ray diffraction.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 864, doi. 10.1002/pssr.201307244

By:

Gómez‐Gómez, M.;
Garro, N.;
Segura‐Ruiz, J.;
Martínez‐Criado, G.;
Chu, M. H.;
Cantarero, A.;
Denker, C.;
Malindretos, J.;
Rizzi, A.

Publication type:

Article

Quantum efficiency of InAs/InP nanowire heterostructures grown on silicon substrates.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 878, doi. 10.1002/pssr.201307242

By:

Anufriev, Roman;
Chauvin, Nicolas;
Khmissi, Hammadi;
Naji, Khalid;
Patriarche, Gilles;
Gendry, Michel;
Bru‐Chevallier, Catherine

Publication type:

Article

Information for authors: Phys. Status Solidi RRL 10/2013.

Published in:: Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 924, doi. 10.1002/pssr.201370463
Publication type:: Article

Nanofunctional gallium oxide (Ga2O3) nanowires/nanostructures and their applications in nanodevices.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 781, doi. 10.1002/pssr.201307253

By:

Kumar, Sudheer;
Singh, R.

Publication type:

Article

On the single-particle-reduced entropy of a gated nanowire system in the Coulomb blockade regime.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 907, doi. 10.1002/pssr.201307235

By:

Castelo, José María;
Indlekofer, Klaus Michael;
Malindretos, Joerg

Publication type:

Article

Distribution of zinc-blende twins and wurtzite segments in GaAs nanowires probed by X-ray nanodiffraction.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 860, doi. 10.1002/pssr.201307246

By:

Biermanns, Andreas;
Carbone, Dina;
Breuer, Steffen;
Jacques, Vincent L. R.;
Schulli, Tobias;
Geelhaar, Lutz;
Pietsch, Ullrich

Publication type:

Article

Thermoelectricity in semiconductor nanowires.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 767, doi. 10.1002/pssr.201307239

By:

Kim, Jungwon;
Bahk, Je‐Hyeong;
Hwang, Junphil;
Kim, Hoon;
Park, Hwanjoo;
Kim, Woochul

Publication type:

Article

Advances in semiconductor nanowire growth on graphene.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 713, doi. 10.1002/pssr.201308010

By:

Mazid Munshi, A.;
Weman, Helge

Publication type:

Article

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 911, doi. 10.1002/pssr.201308014

By:

Ullah, A. R.;
Joyce, H. J.;
Burke, A. M.;
Wong‐Leung, J.;
Tan, H. H.;
Jagadish, C.;
Micolich, A. P.

Publication type:

Article

High aspect ratio semiconducting nanostructure random networks: highly versatile materials for multiple applications.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 919, doi. 10.1002/pssr.201308047

By:

Ternon, Céline;
Serre, Pauline;
Rey, Germain;
Holtzinger, Claire;
Periwal, Priyanka;
Martin, Mickaël;
Baron, Thierry;
Stambouli, Valérie;
Langlet, Michel

Publication type:

Article

Intense intra-3d luminescence and waveguide properties of single Co-doped ZnO nanowires.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 886, doi. 10.1002/pssr.201307230

By:

Geburt, Sebastian;
Röder, Robert;
Kaiser, Uwe;
Chen, Limei;
Chu, Manh‐Hung;
Segura‐Ruiz, Jaime;
Martínez‐Criado, Gema;
Heimbrodt, Wolfram;
Ronning, Carsten

Publication type:

Article

Cu particle seeded InP-InAs axial nanowire heterostructures.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 850, doi. 10.1002/pssr.201307241

By:

Hillerich, Karla;
Ghidini, Dario S.;
Dick, Kimberly A.;
Deppert, Knut;
Johansson, Jonas

Publication type:

Article

Recent and forthcoming publications in pss: Phys. Status Solidi RRL 10/2013.

Published in:: Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 696, doi. 10.1002/pssr.201370462
Publication type:: Article

Atomistic simulation of phonon and alloy limited hole mobility in Si1- xGe x nanowires.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 903, doi. 10.1002/pssr.201307124

By:

Mehrotra, Saumitra;
Long, Pengyu;
Povolotskyi, Michael;
Klimeck, Gerhard

Publication type:

Article

Focus on Semiconductor Nanowires.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 683, doi. 10.1002/pssr.201370460

By:

Jagadish, Chennupati;
Geelhaar, Lutz;
Gradečak, Silvija

Publication type:

Article

Properties and tailoring of the ubiquitous core-shell p-n junction in semiconductor nanowires by δ-doping.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 894, doi. 10.1002/pssr.201307139

By:

Zervos, Matthew

Publication type:

Article

Issue Information: Phys. Status Solidi RRL 10/2013.

Published in:: Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. n/a, doi. 10.1002/pssr.201370459
Publication type:: Article

Built-in elastic strain and localization effects on GaAs luminescence of MOVPE-grown GaAs-AlGaAs core-shell nanowires.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 874, doi. 10.1002/pssr.201308046

By:

Prete, Paola;
Miccoli, Ilio;
Marzo, Fabio;
Lovergine, Nico

Publication type:

Article

Equivalent circuit model of a nanogenerator based on a piezoelectric nanowire-polymer composite.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 915, doi. 10.1002/pssr.201308017

By:

Graton, Olivier;
Poulin‐Vittrant, Guylaine;
Dahiya, Abhishek Singh;
Camara, Nicolas;
Hue, Louis‐Pascal Tran Huu;
Lethiecq, Marc

Publication type:

Article

A RHEED investigation of self-assembled GaN nanowire nucleation dynamics on bare Si and on Si covered with a thin AlN buffer layer.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 835, doi. 10.1002/pssr.201307255

By:

Hestroffer, Karine;
Daudin, Bruno

Publication type:

Article

Group III nitride core-shell nano- and microrods for optoelectronic applications.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 800, doi. 10.1002/pssr.201307250

By:

Mandl, Martin;
Wang, Xue;
Schimpke, Tilman;
Kölper, Christopher;
Binder, Michael;
Ledig, Johannes;
Waag, Andreas;
Kong, Xiang;
Trampert, Achim;
Bertram, Frank;
Christen, Jürgen;
Barbagini, Francesca;
Calleja, Enrique;
Strassburg, Martin

Publication type:

Article

Self-induced growth of GaN nanowires by molecular beam epitaxy: A critical review of the formation mechanisms.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 699, doi. 10.1002/pssr.201307237

By:

Consonni, V.

Publication type:

Article

Back Cover: Structural and optical properties of Al x Ga1- xN nanowires (Phys. Status Solidi RRL 10/2013).

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. n/a, doi. 10.1002/pssr.201370458

By:

Pierret, A.;
Bougerol, C.;
Hertog, M. den;
Gayral, B.;
Kociak, M.;
Renevier, H.;
Daudin, B.

Publication type:

Article

Influence of surface roughness on Ge nanowire growth by MBE.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 831, doi. 10.1002/pssr.201307248

By:

Bansen, Roman;
Schmidtbauer, Jan;
Juda, Uta;
Markurt, Toni;
Teubner, Thomas;
Heimburger, Robert;
Boeck, Torsten

Publication type:

Article

III-V nanowire photovoltaics: Review of design for high efficiency.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 815, doi. 10.1002/pssr.201307109

By:

LaPierre, R. R.;
Chia, A. C. E.;
Gibson, S. J.;
Haapamaki, C. M.;
Boulanger, J.;
Yee, R.;
Kuyanov, P.;
Zhang, J.;
Tajik, N.;
Jewell, N.;
Rahman, K. M. A.

Publication type:

Article

Structural and optical properties of Al x Ga1- xN nanowires.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 868, doi. 10.1002/pssr.201308009

By:

Pierret, A.;
Bougerol, C.;
Hertog, M. den;
Gayral, B.;
Kociak, M.;
Renevier, H.;
Daudin, B.

Publication type:

Article

Interface defects and impurities at the growth zone of Au-catalyzed GaAs nanowire from first principles.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 882, doi. 10.1002/pssr.201307210

By:

Sakong, Sung;
Du, Yaojun A.;
Kratzer, Peter

Publication type:

Article

Electrical transport in C-doped GaAs nanowires: surface effects.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 890, doi. 10.1002/pssr.201307162

By:

Casadei, Alberto;
Schwender, Jil;
Russo‐Averchi, Eleonora;
Rüffer, Daniel;
Heiss, Martin;
Alarcó‐Lladó, Esther;
Jabeen, Fauzia;
Ramezani, Mohammad;
Nielsch, Kornelius;
Morral, Anna Fontcuberta i

Publication type:

Article

Silicon nanowires - a versatile technology platform.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 793, doi. 10.1002/pssr.201307247

By:

Mikolajick, Thomas;
Heinzig, André;
Trommer, Jens;
Pregl, Sebastian;
Grube, Matthias;
Cuniberti, Gianaurelio;
Weber, Walter M.

Publication type:

Article

Cover Picture: III-V nanowire photovoltaics: Review of design for high efficiency (Phys. Status Solidi RRL 10/2013).

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. n/a, doi. 10.1002/pssr.201370457

By:

LaPierre, R. R.;
Chia, A. C. E.;
Gibson, S. J.;
Haapamaki, C. M.;
Boulanger, J.;
Yee, R.;
Kuyanov, P.;
Zhang, J.;
Tajik, N.;
Jewell, N.;
Rahman, K. M. A.

Publication type:

Article

Si substrate preparation for the VS and VLS growth of InAs nanowires.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 840, doi. 10.1002/pssr.201307229

By:

Rieger, Torsten;
Grützmacher, Detlev;
Lepsa, Mihail Ion

Publication type:

Article

Thermal conductivity of silicon nanowires: From fundamentals to phononic engineering.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 754, doi. 10.1002/pssr.201307188

By:

Zhang, Gang;
Zhang, Yong‐Wei

Publication type:

Article

Magnetotransport and thermopower of single Bi0.92Sb0.08 nanowires.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 898, doi. 10.1002/pssr.201308004

By:

Heiderich, Sonja;
Toellner, William;
Boehnert, Tim;
Gluschke, Jan Goeran;
Zastrow, Sebastian;
Schumacher, Christian;
Pippel, Eckhard;
Nielsch, Kornelius

Publication type:

Article

Vibrational properties of semiconductor nanowires and nanowire heterostructures: ensembles and single nanowires.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 727, doi. 10.1002/pssr.201308015

By:

Cros, Ana

Publication type:

Article

Works matching IS 18626254 AND DT 2013 AND VI 7 AND IP 10

First principles studies of structural, electrical and magnetic properties of semiconductor nanowires.

Study of radial growth in patterned self-catalyzed GaAs nanowire arrays by gas source molecular beam epitaxy.

Zincblende-to-wurtzite interface improvement by group III loading in Au-seeded GaAs nanowires.

Contents: Phys. Status Solidi RRL 10/2013.

Radial composition of single InGaN nanowires: a combined study by EDX, Raman spectroscopy, and X-ray diffraction.

Quantum efficiency of InAs/InP nanowire heterostructures grown on silicon substrates.

Information for authors: Phys. Status Solidi RRL 10/2013.

Nanofunctional gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) nanowires/nanostructures and their applications in nanodevices.

On the single-particle-reduced entropy of a gated nanowire system in the Coulomb blockade regime.

Distribution of zinc-blende twins and wurtzite segments in GaAs nanowires probed by X-ray nanodiffraction.

Thermoelectricity in semiconductor nanowires.

Advances in semiconductor nanowire growth on graphene.

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors.

High aspect ratio semiconducting nanostructure random networks: highly versatile materials for multiple applications.

Intense intra-3d luminescence and waveguide properties of single Co-doped ZnO nanowires.

Cu particle seeded InP-InAs axial nanowire heterostructures.

Recent and forthcoming publications in pss: Phys. Status Solidi RRL 10/2013.

Atomistic simulation of phonon and alloy limited hole mobility in Si<sub>1- x</sub>Ge <sub>x</sub> nanowires.

Focus on Semiconductor Nanowires.

Properties and tailoring of the ubiquitous core-shell p-n junction in semiconductor nanowires by δ-doping.

Issue Information: Phys. Status Solidi RRL 10/2013.

Built-in elastic strain and localization effects on GaAs luminescence of MOVPE-grown GaAs-AlGaAs core-shell nanowires.

Equivalent circuit model of a nanogenerator based on a piezoelectric nanowire-polymer composite.

A RHEED investigation of self-assembled GaN nanowire nucleation dynamics on bare Si and on Si covered with a thin AlN buffer layer.

Group III nitride core-shell nano- and microrods for optoelectronic applications.

Self-induced growth of GaN nanowires by molecular beam epitaxy: A critical review of the formation mechanisms.

Back Cover: Structural and optical properties of Al <sub>x</sub> Ga<sub>1- x</sub>N nanowires (Phys. Status Solidi RRL 10/2013).

Influence of surface roughness on Ge nanowire growth by MBE.

III-V nanowire photovoltaics: Review of design for high efficiency.

Structural and optical properties of Al <sub>x</sub> Ga<sub>1- x</sub>N nanowires.

Interface defects and impurities at the growth zone of Au-catalyzed GaAs nanowire from first principles.

Electrical transport in C-doped GaAs nanowires: surface effects.

Silicon nanowires - a versatile technology platform.

Cover Picture: III-V nanowire photovoltaics: Review of design for high efficiency (Phys. Status Solidi RRL 10/2013).

Si substrate preparation for the VS and VLS growth of InAs nanowires.

Thermal conductivity of silicon nanowires: From fundamentals to phononic engineering.

Magnetotransport and thermopower of single Bi<sub>0.92</sub>Sb<sub>0.08</sub> nanowires.

Vibrational properties of semiconductor nanowires and nanowire heterostructures: ensembles and single nanowires.