Works matching IS 18626254 AND DT 2013 AND VI 7 AND IP 10

Results: 38

Nanofunctional gallium oxide (Ga2O3) nanowires/nanostructures and their applications in nanodevices.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 781, doi. 10.1002/pssr.201307253
By:
- Kumar, Sudheer;
- Singh, R.
Publication type:
Article
Distribution of zinc-blende twins and wurtzite segments in GaAs nanowires probed by X-ray nanodiffraction.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 860, doi. 10.1002/pssr.201307246
By:
- Biermanns, Andreas;
- Carbone, Dina;
- Breuer, Steffen;
- Jacques, Vincent L. R.;
- Schulli, Tobias;
- Geelhaar, Lutz;
- Pietsch, Ullrich
Publication type:
Article
Properties and tailoring of the ubiquitous core-shell p-n junction in semiconductor nanowires by δ-doping.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 894, doi. 10.1002/pssr.201307139
By:
- Zervos, Matthew
Publication type:
Article
Information for authors: Phys. Status Solidi RRL 10/2013.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 924, doi. 10.1002/pssr.201370463
Publication type:
Article
Equivalent circuit model of a nanogenerator based on a piezoelectric nanowire-polymer composite.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 915, doi. 10.1002/pssr.201308017
By:
- Graton, Olivier;
- Poulin‐Vittrant, Guylaine;
- Dahiya, Abhishek Singh;
- Camara, Nicolas;
- Hue, Louis‐Pascal Tran Huu;
- Lethiecq, Marc
Publication type:
Article
Quantum efficiency of InAs/InP nanowire heterostructures grown on silicon substrates.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 878, doi. 10.1002/pssr.201307242
By:
- Anufriev, Roman;
- Chauvin, Nicolas;
- Khmissi, Hammadi;
- Naji, Khalid;
- Patriarche, Gilles;
- Gendry, Michel;
- Bru‐Chevallier, Catherine
Publication type:
Article
Contents: Phys. Status Solidi RRL 10/2013.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 685, doi. 10.1002/pssr.201370461
Publication type:
Article
Built-in elastic strain and localization effects on GaAs luminescence of MOVPE-grown GaAs-AlGaAs core-shell nanowires.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 874, doi. 10.1002/pssr.201308046
By:
- Prete, Paola;
- Miccoli, Ilio;
- Marzo, Fabio;
- Lovergine, Nico
Publication type:
Article
On the single-particle-reduced entropy of a gated nanowire system in the Coulomb blockade regime.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 907, doi. 10.1002/pssr.201307235
By:
- Castelo, José María;
- Indlekofer, Klaus Michael;
- Malindretos, Joerg
Publication type:
Article
Thermoelectricity in semiconductor nanowires.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 767, doi. 10.1002/pssr.201307239
By:
- Kim, Jungwon;
- Bahk, Je‐Hyeong;
- Hwang, Junphil;
- Kim, Hoon;
- Park, Hwanjoo;
- Kim, Woochul
Publication type:
Article
Advances in semiconductor nanowire growth on graphene.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 713, doi. 10.1002/pssr.201308010
By:
- Mazid Munshi, A.;
- Weman, Helge
Publication type:
Article
Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 911, doi. 10.1002/pssr.201308014
By:
- Ullah, A. R.;
- Joyce, H. J.;
- Burke, A. M.;
- Wong‐Leung, J.;
- Tan, H. H.;
- Jagadish, C.;
- Micolich, A. P.
Publication type:
Article
Magnetotransport and thermopower of single Bi0.92Sb0.08 nanowires.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 898, doi. 10.1002/pssr.201308004
By:
- Heiderich, Sonja;
- Toellner, William;
- Boehnert, Tim;
- Gluschke, Jan Goeran;
- Zastrow, Sebastian;
- Schumacher, Christian;
- Pippel, Eckhard;
- Nielsch, Kornelius
Publication type:
Article
High aspect ratio semiconducting nanostructure random networks: highly versatile materials for multiple applications.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 919, doi. 10.1002/pssr.201308047
By:
- Ternon, Céline;
- Serre, Pauline;
- Rey, Germain;
- Holtzinger, Claire;
- Periwal, Priyanka;
- Martin, Mickaël;
- Baron, Thierry;
- Stambouli, Valérie;
- Langlet, Michel
Publication type:
Article
Intense intra-3d luminescence and waveguide properties of single Co-doped ZnO nanowires.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 886, doi. 10.1002/pssr.201307230
By:
- Geburt, Sebastian;
- Röder, Robert;
- Kaiser, Uwe;
- Chen, Limei;
- Chu, Manh‐Hung;
- Segura‐Ruiz, Jaime;
- Martínez‐Criado, Gema;
- Heimbrodt, Wolfram;
- Ronning, Carsten
Publication type:
Article
Cu particle seeded InP-InAs axial nanowire heterostructures.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 850, doi. 10.1002/pssr.201307241
By:
- Hillerich, Karla;
- Ghidini, Dario S.;
- Dick, Kimberly A.;
- Deppert, Knut;
- Johansson, Jonas
Publication type:
Article
Recent and forthcoming publications in pss: Phys. Status Solidi RRL 10/2013.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 696, doi. 10.1002/pssr.201370462
Publication type:
Article
First principles studies of structural, electrical and magnetic properties of semiconductor nanowires.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 739, doi. 10.1002/pssr.201307234
By:
- Galicka, Marta;
- Buczko, Ryszard;
- Kacman, Perla;
- Lima, Erika N.;
- Schmidt, Tome M.;
- Shtrikman, Hadas
Publication type:
Article
Study of radial growth in patterned self-catalyzed GaAs nanowire arrays by gas source molecular beam epitaxy.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 845, doi. 10.1002/pssr.201307142
By:
- Gibson, Sandra;
- LaPierre, Ray
Publication type:
Article
Atomistic simulation of phonon and alloy limited hole mobility in Si1- xGe x nanowires.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 903, doi. 10.1002/pssr.201307124
By:
- Mehrotra, Saumitra;
- Long, Pengyu;
- Povolotskyi, Michael;
- Klimeck, Gerhard
Publication type:
Article
Issue Information: Phys. Status Solidi RRL 10/2013.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. n/a, doi. 10.1002/pssr.201370459
Publication type:
Article
Zincblende-to-wurtzite interface improvement by group III loading in Au-seeded GaAs nanowires.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 855, doi. 10.1002/pssr.201307251
By:
- Jacobsson, Daniel;
- Lehmann, Sebastian;
- Dick, Kimberly A.
Publication type:
Article
Radial composition of single InGaN nanowires: a combined study by EDX, Raman spectroscopy, and X-ray diffraction.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 864, doi. 10.1002/pssr.201307244
By:
- Gómez‐Gómez, M.;
- Garro, N.;
- Segura‐Ruiz, J.;
- Martínez‐Criado, G.;
- Chu, M. H.;
- Cantarero, A.;
- Denker, C.;
- Malindretos, J.;
- Rizzi, A.
Publication type:
Article
Thermal conductivity of silicon nanowires: From fundamentals to phononic engineering.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 754, doi. 10.1002/pssr.201307188
By:
- Zhang, Gang;
- Zhang, Yong‐Wei
Publication type:
Article
Vibrational properties of semiconductor nanowires and nanowire heterostructures: ensembles and single nanowires.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 727, doi. 10.1002/pssr.201308015
By:
- Cros, Ana
Publication type:
Article
A RHEED investigation of self-assembled GaN nanowire nucleation dynamics on bare Si and on Si covered with a thin AlN buffer layer.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 835, doi. 10.1002/pssr.201307255
By:
- Hestroffer, Karine;
- Daudin, Bruno
Publication type:
Article
Self-induced growth of GaN nanowires by molecular beam epitaxy: A critical review of the formation mechanisms.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 699, doi. 10.1002/pssr.201307237
By:
- Consonni, V.
Publication type:
Article
Back Cover: Structural and optical properties of Al x Ga1- xN nanowires (Phys. Status Solidi RRL 10/2013).
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. n/a, doi. 10.1002/pssr.201370458
By:
- Pierret, A.;
- Bougerol, C.;
- Hertog, M. den;
- Gayral, B.;
- Kociak, M.;
- Renevier, H.;
- Daudin, B.
Publication type:
Article
Influence of surface roughness on Ge nanowire growth by MBE.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 831, doi. 10.1002/pssr.201307248
By:
- Bansen, Roman;
- Schmidtbauer, Jan;
- Juda, Uta;
- Markurt, Toni;
- Teubner, Thomas;
- Heimburger, Robert;
- Boeck, Torsten
Publication type:
Article
III-V nanowire photovoltaics: Review of design for high efficiency.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 815, doi. 10.1002/pssr.201307109
By:
- LaPierre, R. R.;
- Chia, A. C. E.;
- Gibson, S. J.;
- Haapamaki, C. M.;
- Boulanger, J.;
- Yee, R.;
- Kuyanov, P.;
- Zhang, J.;
- Tajik, N.;
- Jewell, N.;
- Rahman, K. M. A.
Publication type:
Article
Structural and optical properties of Al x Ga1- xN nanowires.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 868, doi. 10.1002/pssr.201308009
By:
- Pierret, A.;
- Bougerol, C.;
- Hertog, M. den;
- Gayral, B.;
- Kociak, M.;
- Renevier, H.;
- Daudin, B.
Publication type:
Article
Focus on Semiconductor Nanowires.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 683, doi. 10.1002/pssr.201370460
By:
- Jagadish, Chennupati;
- Geelhaar, Lutz;
- Gradečak, Silvija
Publication type:
Article
Interface defects and impurities at the growth zone of Au-catalyzed GaAs nanowire from first principles.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 882, doi. 10.1002/pssr.201307210
By:
- Sakong, Sung;
- Du, Yaojun A.;
- Kratzer, Peter
Publication type:
Article
Group III nitride core-shell nano- and microrods for optoelectronic applications.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 800, doi. 10.1002/pssr.201307250
By:
- Mandl, Martin;
- Wang, Xue;
- Schimpke, Tilman;
- Kölper, Christopher;
- Binder, Michael;
- Ledig, Johannes;
- Waag, Andreas;
- Kong, Xiang;
- Trampert, Achim;
- Bertram, Frank;
- Christen, Jürgen;
- Barbagini, Francesca;
- Calleja, Enrique;
- Strassburg, Martin
Publication type:
Article
Electrical transport in C-doped GaAs nanowires: surface effects.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 890, doi. 10.1002/pssr.201307162
By:
- Casadei, Alberto;
- Schwender, Jil;
- Russo‐Averchi, Eleonora;
- Rüffer, Daniel;
- Heiss, Martin;
- Alarcó‐Lladó, Esther;
- Jabeen, Fauzia;
- Ramezani, Mohammad;
- Nielsch, Kornelius;
- Morral, Anna Fontcuberta i
Publication type:
Article
Cover Picture: III-V nanowire photovoltaics: Review of design for high efficiency (Phys. Status Solidi RRL 10/2013).
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. n/a, doi. 10.1002/pssr.201370457
By:
- LaPierre, R. R.;
- Chia, A. C. E.;
- Gibson, S. J.;
- Haapamaki, C. M.;
- Boulanger, J.;
- Yee, R.;
- Kuyanov, P.;
- Zhang, J.;
- Tajik, N.;
- Jewell, N.;
- Rahman, K. M. A.
Publication type:
Article
Silicon nanowires - a versatile technology platform.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 793, doi. 10.1002/pssr.201307247
By:
- Mikolajick, Thomas;
- Heinzig, André;
- Trommer, Jens;
- Pregl, Sebastian;
- Grube, Matthias;
- Cuniberti, Gianaurelio;
- Weber, Walter M.
Publication type:
Article
Si substrate preparation for the VS and VLS growth of InAs nanowires.
Published in:
Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 840, doi. 10.1002/pssr.201307229
By:
- Rieger, Torsten;
- Grützmacher, Detlev;
- Lepsa, Mihail Ion
Publication type:
Article

Works matching IS 18626254 AND DT 2013 AND VI 7 AND IP 10

Nanofunctional gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) nanowires/nanostructures and their applications in nanodevices.

Distribution of zinc-blende twins and wurtzite segments in GaAs nanowires probed by X-ray nanodiffraction.

Properties and tailoring of the ubiquitous core-shell p-n junction in semiconductor nanowires by δ-doping.

Information for authors: Phys. Status Solidi RRL 10/2013.

Equivalent circuit model of a nanogenerator based on a piezoelectric nanowire-polymer composite.

Quantum efficiency of InAs/InP nanowire heterostructures grown on silicon substrates.

Contents: Phys. Status Solidi RRL 10/2013.

Built-in elastic strain and localization effects on GaAs luminescence of MOVPE-grown GaAs-AlGaAs core-shell nanowires.

On the single-particle-reduced entropy of a gated nanowire system in the Coulomb blockade regime.

Thermoelectricity in semiconductor nanowires.

Advances in semiconductor nanowire growth on graphene.

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors.

Magnetotransport and thermopower of single Bi<sub>0.92</sub>Sb<sub>0.08</sub> nanowires.

High aspect ratio semiconducting nanostructure random networks: highly versatile materials for multiple applications.

Intense intra-3d luminescence and waveguide properties of single Co-doped ZnO nanowires.

Cu particle seeded InP-InAs axial nanowire heterostructures.

Recent and forthcoming publications in pss: Phys. Status Solidi RRL 10/2013.

First principles studies of structural, electrical and magnetic properties of semiconductor nanowires.

Study of radial growth in patterned self-catalyzed GaAs nanowire arrays by gas source molecular beam epitaxy.

Atomistic simulation of phonon and alloy limited hole mobility in Si<sub>1- x</sub>Ge <sub>x</sub> nanowires.

Issue Information: Phys. Status Solidi RRL 10/2013.

Zincblende-to-wurtzite interface improvement by group III loading in Au-seeded GaAs nanowires.

Radial composition of single InGaN nanowires: a combined study by EDX, Raman spectroscopy, and X-ray diffraction.

Thermal conductivity of silicon nanowires: From fundamentals to phononic engineering.

Vibrational properties of semiconductor nanowires and nanowire heterostructures: ensembles and single nanowires.

A RHEED investigation of self-assembled GaN nanowire nucleation dynamics on bare Si and on Si covered with a thin AlN buffer layer.

Self-induced growth of GaN nanowires by molecular beam epitaxy: A critical review of the formation mechanisms.

Back Cover: Structural and optical properties of Al <sub>x</sub> Ga<sub>1- x</sub>N nanowires (Phys. Status Solidi RRL 10/2013).

Influence of surface roughness on Ge nanowire growth by MBE.

III-V nanowire photovoltaics: Review of design for high efficiency.

Structural and optical properties of Al <sub>x</sub> Ga<sub>1- x</sub>N nanowires.

Focus on Semiconductor Nanowires.

Interface defects and impurities at the growth zone of Au-catalyzed GaAs nanowire from first principles.

Group III nitride core-shell nano- and microrods for optoelectronic applications.

Electrical transport in C-doped GaAs nanowires: surface effects.

Cover Picture: III-V nanowire photovoltaics: Review of design for high efficiency (Phys. Status Solidi RRL 10/2013).

Silicon nanowires - a versatile technology platform.

Si substrate preparation for the VS and VLS growth of InAs nanowires.