Works in Physica Status Solidi. A: Applications & Materials Science, 2024, Vol 221, Issue 21

Results: 62

Masthead.

Published in:: Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202470042
Publication type:: Article

Cover Picture.

Published in:: Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202470041
Publication type:: Article

Nitride Semiconductors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400802

By:

Fujioka, Hiroshi;
Miyake, Hideto;
Hirayama, Hideki;
Yamada, Yoichi;
Funato, Mitsuru;
Katayama, Ryuji;
Kojima, Kazunobu;
Ichikawa, Shuhei;
Murotani, Hideaki;
Uemukai, Masahiro

Publication type:

Article

Design of Horizontally Stacked AlN and Dielectric Cores Transverse Quasi‐Phase‐Matched Channel Waveguide for Squeezed Light Generation.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400380

By:

Honda, Hiroto;
Noro, Ryosuke;
Uemukai, Masahiro;
Tanikawa, Tomoyuki;
Katayama, Ryuji

Publication type:

Article

Effects of Thermal Annealing on V‐Based Ohmic Contacts on n‐Type AlGaN with High Al Content.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400148

By:

Ebata, Kazuaki;
Hiroki, Masanobu;
Tateno, Kouta;
Kumakura, Kazuhide;
Taniyasu, Yoshitaka

Publication type:

Article

Optimization of the Al Composition of the p‐AlGaN Electron Blocking Layer in GaInN/GaN Multiquantum‐Shell Nanowire LEDs.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400116

By:

Hattori, Yuta;
Lu, Weifang;
Inaba, Soma;
Shima, Ayaka;
Ii, Shiori;
Takahashi, Mizuki;
Yamanaka, Yuki;
Kubota, Kosei;
Kamiyama, Satoshi;
Takeuchi, Tetsuya;
Iwaya, Motoaki

Publication type:

Article

Highly Collimated Light Emission of Deep‐Ultraviolet Light‐Emitting Diodes Using Fresnel Zone Plate Nanodiffraction Patterns.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400081

By:

Wei, Lingjie;
Inoue, Shin‐ichiro

Publication type:

Article

Suppression of Enhanced Magnesium Diffusion During High‐Pressure Annealing of Implanted GaN.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400080

By:

Jacobs, Alan G.;
Feigelson, Boris N.;
Lundh, James S.;
Spencer, Joseph A.;
Freitas, Jaime A.;
Gunning, Brendan P.;
Kaplar, Robert J.;
Zhang, Yuhao;
Tadjer, Marko J.;
Hobart, Karl D.;
Anderson, Travis J.

Publication type:

Article

Hybridly Packaged White Light Emitting Diode Composed of Fluorescent SiC and Nitride‐Based Near‐Ultraviolet Light Emitting Diode.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400118

By:

Mizuno, Taisei;
Akiyoshi, Syota;
Iwaya, Motoaki;
Takeuchi, Tetsuya;
Kamiyama, Satoshi;
Ou, Yiyu;
Ou, Haiyan

Publication type:

Article

Homoepitaxial Regrowth of AlGaN on AlGaN Templates Prepared via Chemical Mechanical Polishing and Its Application to UV‐B Laser Diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400113

By:

Yamada, Ryoya;
Kondo, Ryosuke;
Miyake, Rintaro;
Nishibayasi, Toma;
Matsubara, Eri;
Imoto, Yoshinori;
Iwayama, Sho;
Takeuchi, Tetsuya;
Kamiyama, Satoshi;
Miyake, Hideto;
Iwaya, Motoaki

Publication type:

Article

GaInN‐Based Blue LED with a PEDOT/PSS Hole Transport Layer.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400090

By:

Kato, Yuma;
Iwaya, Motoaki;
Takeuchi, Tetsuya;
Kamiyama, Satoshi

Publication type:

Article

Evidence‐Based Understanding of Lateral Hole Transport During OFF‐State Stress Completing Dynamic GaN‐on‐Si Buffer Charging Model.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400089

By:

Butej, Boris;
Wieland, Dominik;
Pogany, Dionyz;
Gharib, Amgad;
Pobegen, Gregor;
Ostermaier, Clemens;
Koller, Christian

Publication type:

Article

An Approach Toward Broader Emission Bands in Semipolar InGaN Quantum Wells on Convex Lens‐Shaped GaN Microstructures via Lower‐Temperature Growth.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400110

By:

Fukushige, Shogo;
Matsuda, Yoshinobu;
Funato, Mitsuru;
Kawakami, Yoichi

Publication type:

Article

Fabrication of Ultralow‐Bevel Angle Mesa Structures for Vertical GaN Devices.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400079

By:

Tarenko, Jarosław;
Kamiński, Maciej;
Taube, Andrzej;
Ekielski, Marek;
Kruszka, Renata;
Zadura, Magdalena;
Szerling, Anna;
Prystawko, Paweł;
Boćkowski, Michał;
Król, Krystian;
Jankowska‐Śliwińska, Joanna;
Komorowska, Katarzyna;
Grzegory, Izabella

Publication type:

Article

Light Emission Characteristics in Nitride Semiconductor Nanowires Fabricated by Top‐down Method.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400078

By:

Tateno, Kouta;
Takiguchi, Masato;
Ebata, Kazuaki;
Sasaki, Satoshi;
Kumakura, Kazuhide;
Taniyasu, Yoshitaka

Publication type:

Article

Vertical GaN Trench‐MOSFETs Fabricated on Ammonothermally Grown Bulk GaN Substrates.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400077

By:

Kamiński, Maciej;
Taube, Andrzej;
Tarenko, Jaroslaw;
Sadowski, Oskar;
Brzozowski, Ernest;
Wierzbicka, Justyna;
Zadura, Magdalena;
Ekielski, Marek;
Kosiel, Kamil;
Jankowska‐Śliwińska, Joanna;
Abendroth, Kamil;
Szerling, Anna;
Prystawko, Paweł;
Boćkowski, Michał;
Grzegory, Izabella

Publication type:

Article

Low‐Resistivity Ti/Al/TiN/Au Ohmic Contacts to Ga‐ and N‐Face n‐GaN for Vertical Power Devices.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400076

By:

Sadowski, Oskar;
Kamiński, Maciej;
Taube, Andrzej;
Tarenko, Jarosław;
Guziewicz, Marek;
Wzorek, Marek;
Maleszyk, Justyna;
Jóźwik, Iwona;
Szerling, Anna;
Prystawko, Paweł;
Boćkowski, Michał;
Grzegory, Izabella

Publication type:

Article

Optimization of Two‐Zone Step‐Etched Junction Termination Structures for Vertical GaN Power Devices.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400075

By:

Taube, Andrzej;
Kamiński, Maciej

Publication type:

Article

Advancing Neutron Detection: Fabrication, Characterization, and Performance Evaluation of Self‐Powered PIN BGaN/GaN Superlattice‐Based Neutron Detectors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400074

By:

Srivastava, Ashutosh;
Mballo, Adama;
Sundaram, Suresh;
Ottapilakkal, Vishnu;
Vuong, Phuong;
Karrakchou, Soufiane;
Kumar, Mritunjay;
Li, Xiaohang;
Halfaya, Yacine;
Gautier, Simon;
Voss, Paul L.;
Salvestrini, Jean Paul;
Ougazzaden, Abdallah

Publication type:

Article

Effect of Ultra‐Thin AlGaN Regrown Layer on the Electrical Properties of ZrO2/AlGaN/GaN Structures.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400073

By:

Nezu, Toi;
Maeda, Shogo;
Baratov, Ali;
Terai, Suguru;
Sekiyama, Kishi;
Nagase, Itsuki;
Kuzuhara, Masaaki;
Yamamoto, Akio;
Asubar, Joel T.

Publication type:

Article

Dynamical Behavior of a Stacked Blue Laser Diode Consisting of Two Active Regions with Wide InGaN Quantum Wells and Two Tunnel Junctions.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400071

By:

Tepaβ, Jannina;
Uhlig, Lukas;
Hajdel, Mateusz;
Siekacz, Marcin;
Muziol, Grzegorz;
Schwarz, Ulrich Theodor

Publication type:

Article

High‐Resolution Spectroscopy of Blue High‐Power Laser Diodes with a Fabry–Pérot Interferometer.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400070

By:

Kunzmann, Dominic J.;
Kohlstedt, Raphael;
Uhlig, Lukas;
Schwarz, Ulrich T.

Publication type:

Article

Metal‐Organic Chemical Vapor Deposition Regrowth of Highly Doped n+ (In)GaN Source/Drain Layers for Radio Frequency Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400069

By:

Banerjee, Sourish;
Peralagu, Uthayasankaran;
Alian, Alireza;
Zhao, Ming;
Hahn, Herwig;
Minj, Albert;
Vanhove, Benjamin;
Vohra, Anurag;
Parvais, Bertrand;
Langer, Robert;
Collaert, Nadine

Publication type:

Article

Strain‐Engineered Unified SiNx Deposition for Device Passivation and Capacitance Dielectric in GaN Monolithic Microwave Integrated Circuit.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400068

By:

Sahu, Jyoti;
Parvez, Bazila;
Patil, Mahalaxmi;
S. J., Ranie;
Sahu, Arpit;
Basak, Subhajit;
Upadhyay, Bhanu;
Ganguly, Swaroop;
Saha, Dipankar

Publication type:

Article

Vertical GaN PIN Structure with Intrinsic AlGaN Drift Layer Grown Using Metal‐Organic Chemical Vapor Deposition.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400058

By:

Heo, Yunseok;
Jeong, Joocheol;
Mohan, Shyam;
Kim, Minho;
Park, Jooyong;
Lee, Joonhyuk;
Nam, Okhyun

Publication type:

Article

SiO2‐GaN Interface Improvement by Wet Cleaning and In Situ Annealing for GaN MOS Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400065

By:

Henn, Mirjam;
Ziegler, Johannes;
Huber, Christian;
Rodriguez‐Alvarez, Humberto;
Kaminski, Nando

Publication type:

Article

Gain Characteristics of Optically Pumped UVC Lasers with Wide AlGaN Single‐Quantum‐Well Active Regions.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400067

By:

Cardinali, Giulia;
Kölle, Sebastian;
Schulz, Alexander;
Susilo, Norman;
Hauer Vidal, Daniel;
Guttmann, Martin;
Blonski, Markus A.;
Römer, Friedhard;
Witzigmann, Bernd;
Nippert, Felix;
Wagner, Markus R.;
Wernicke, Tim;
Kneissl, Michael

Publication type:

Article

Microwave Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistor on Semi‐Insulating Mn‐Doped GaN Substrate.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400057

By:

Sugino, Tomoharu;
Osaki, Kenji;
Nonaka, Kentaro;
Sugiyama, Tomohiko;
Kuraoka, Yoshitaka;
Wakejima, Akio

Publication type:

Article

Estimation of Junction Temperature in Single 228 nm‐Band AlGaN Far‐Ultraviolet‐C Light‐Emitting Diode on c‐Sapphire Having 1.8 mW Power and 0.32% External Quantum Efficiency.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400064

By:

Ajmal Khan, Muhammad;
Muta, Mitsuhiro;
Fujimoto, Kohei;
Gonzalez Rojas, Javier;
Fredes, Pablo;
Gramsch, Ernesto;
Iwaisako, Yasushi;
Yaguchi, Hiroyuki;
Hirayama, Hideki

Publication type:

Article

Electrical Properties of N‐Polar GaN/AlGaN/AlN Grown via Metal‐Organic Vapor Phase Epitaxy.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400060

By:

Zazuli, Aina Hiyama;
Kowaki, Taketo;
Miyamoto, Minagi;
Hanasaku, Koki;
Inahara, Daisuke;
Fujii, Kai;
Kurai, Satoshi;
Okada, Narihito;
Yamada, Yoichi

Publication type:

Article

Localized Epitaxial Growth of 402 V Breakdown Voltage Quasi‐Vertical GaN‐on‐Si p‐n Diode on 200 mm‐Diameter Wafers.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400059

By:

Kaltsounis, Thomas;
El Amrani, Mohammed;
Plaza Arguello, David;
El Rammouz, Hala;
Maurya, Vishwajeet;
Lafossas, Matthieu;
Torrengo, Simona;
Haas, Helge;
Mendizabal, Laurent;
Gueugnot, Alain;
Mariolle, Denis;
Jalabert, Thomas;
Buckley, Julien;
Cordier, Yvon;
Charles, Matthew

Publication type:

Article

Growth Mechanism of N‐Polar GaN on Vicinal N‐Polar AlN Templates in Metal‐Organic Vapor Phase Epitaxy.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400055

By:

Miyamoto, Minagi;
Hanasaku, Koki;
Kowaki, Taketo;
Inahara, Daisuke;
Zazuli, Aina Hiyama;
Fujii, Kai;
Kimoto, Taisei;
Ninoki, Ryosuke;
Kurai, Satoshi;
Okada, Narihito;
Yamada, Yoichi

Publication type:

Article

Hole Generation in Polarization‐Doped AlxGa1–xN (x = 0.9–0.35)‐Graded Layer with Heavily Mg‐Doped Al0.35Ga0.65N Contact Layer for 275 nm Deep‐Ultraviolet Light‐Emitting Diode

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400054

By:

Takahata, Hayata;
Kachi, Tomoaki;
Hamashima, Naoki;
Oka, Ryunosuke;
Ishiguro, Hisanori;
Takeuchi, Tetsuya;
Kamiyama, Satoshi;
Iwaya, Motoaki;
Saito, Yoshiki;
Okuno, Koji

Publication type:

Article

Effect of the Twist Crystallinity of N‐Polar AlN Underlayer on the Electrical Properties of GaN/AlN Structures.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400053

By:

Kowaki, Taketo;
Hanasaku, Koki;
Miyamoto, Minagi;
Zazuli, Aina Hiyama;
Inahara, Daisuke;
Fujii, Kai;
Kimoto, Taisei;
Ninoki, Ryosuke;
Kurai, Satoshi;
Okada, Narihito;
Yamada, Yoichi

Publication type:

Article

Comparative Analysis of Ni/Ag and Ni/Au Contacts on GaN/AlGaN/GaN Platform.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400046

By:

Zhang, Yuanlei;
Zhang, Xuanming;
Sun, Zhiwei;
Wang, Weisheng;
Ling, Maoqing;
Kong, Zhijie;
Liang, Ye;
Yan, Jiudun;
Liu, Wen

Publication type:

Article

Elimination of V‐Shaped Pits in Thick InGaN Layers via Ammonia‐Assisted Face‐to‐Face Annealing.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400052

By:

Nakata, Atsuto;
Sasaki, Ayano;
Kurai, Satoshi;
Okada, Narihito;
Yamada, Yoichi

Publication type:

Article

Metal‐Organic Chemical Vapor Deposition Grown Low‐Temperature Aluminum Nitride Gate Dielectric for Gallium Nitride on Si High Electron Mobility Transistor.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400050

By:

Venugopalarao, Anirudh;
Kanta, Shantveer;
Chandrasekar, Hareesh;
Gowrisankar, Aniruddhan;
Rengarajan, Muralidharan R.;
Nath, Digbijoy N.;
Raghavan, Srinivasan

Publication type:

Article

High‐Performance and Temperature‐Stable InGaN Single‐Quantum‐Well Red Light‐Emitting Diodes via Selective Hydrogen Passivation.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400048

By:

Altinkaya, Cesur;
Kirilenko, Pavel;
Iida, Daisuke;
Ohkawa, Kazuhiro

Publication type:

Article

Enhanced Performance of GaN HEMTs in X‐band Applications Using SixN/Si3N4 Bilayer Passivation Technique.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400047

By:

Li, Shiming;
Wu, Mei;
Yang, Ling;
Hou, Bin;
Zhang, Meng;
Chang, Qingyuan;
Ma, Xiaohua;
Hao, Yue

Publication type:

Article

Simulation Study of Aluminum Nitride TrenchFETs with Polarization‐Induced Doping.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400045

By:

Faber, Samuel;
Römer, Friedhard;
Witzigmann, Bernd

Publication type:

Article

Fabrication Process of MicroLED Film for Achieving Vertical Current Injection Using Transfer Technology.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400051

By:

Kanda, Ryota;
Kitade, Taiki;
Nishikawa, Atsushi;
Loesing, Alexander;
Sekiguchi, Hiroto

Publication type:

Article

Enhancing the Forward Gate Bias Robustness in p‐GaN Gate High‐Electron‐Mobility Transistors through Doping Profile Engineering.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400043

By:

Borga, Matteo;
Posthuma, Niels;
Vohra, Anurag;
Bakeroot, Benoit;
Decoutere, Stefaan

Publication type:

Article

Signatures of Mesoscopic Transport in Single Non‐Intentionally Doped GaN‐Nanowire Field‐Effect Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400040

By:

Hergert, Hannes;
Zscherp, Mario F.;
Klement, Philip;
Schörmann, Jörg;
Chatterjee, Sangam;
Klar, Peter J.;
Elm, Matthias T.

Publication type:

Article

Impact of Carbon Doping on Vertical Leakage Current in AlGaN‐Based Buffer Layer Grown on Silicon Substrate.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400035

By:

Kaneko, Ryoma;
Yoshida, Hisashi;
Yoshioka, Akira;
Hikosaka, Toshiki;
Nunoue, Shinya

Publication type:

Article

Performance Enhancement of Multiple Quantum Shell Nanowire‐Based Micro‐Light Emitting Diodes with Underlying GaInN/GaN Superlattices.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400029

By:

Inaba, Soma;
Lu, Weifang;
Shima, Ayaka;
Ii, Shiori;
Takahashi, Mizuki;
Yamanaka, Yuki;
Hattori, Yuta;
Kubota, Kosei;
Huang, Kai;
Iwaya, Motoaki;
Takeuchi, Tetsuya;
Kamiyama, Satoshi

Publication type:

Article

High Efficiency of 5 μm‐Diameter Blue Micro‐Light‐Emitting Diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400027

By:

Deng, Chuhan;
Chen, Zhizhong;
Dong, Boyan;
Pan, Zuojian;
Zhang, Haodong;
Chen, Yian;
Li, Yuchen;
Wang, Daqi;
Hu, Ling;
Chen, Weihua;
Jiao, Fei;
Kang, Xiangning;
Yuan, Lin;
Zhu, Jianfeng;
Xia, Chenhui;
Wang, Qi;
Zhang, Guoyi;
Shen, Bo

Publication type:

Article

Characteristics of Stacked GaInN‐Based Red, Green, and Blue Full‐Color Monolithic μLED Arrays Connected via Tunnel Junctions.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400026

By:

Saito, Tatsunari;
Hasegawa, Naoki;
Suehiro, Yoshinobu;
Koide, Norikatsu;
Takeuchi, Tetsuya;
Kamiyama, Satoshi;
Iida, Daisuke;
Ohkawa, Kazuhiro;
Iwaya, Motoaki

Publication type:

Article

Device and Noise Performances of AlGaN/GaN High Electron Mobility Transistors with Various GaN Channel Layers Grown on AlN Buffer Layer.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400014

By:

Im, Ki‐Sik;
Kim, Minho;
Nam, Okhyun

Publication type:

Article

Effect of Polarization‐Charge Modulation on the Carrier‐Injection Efficiency of AlGaN‐Based Ultraviolet‐B Laser Diodes Using Polarization Doping in the p‐Type AlGaN Cladding Layer.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202300961

By:

Kondo, Ryosuke;
Matsubara, Eri;
Nishibayashi, Toma;
Yamada, Ryoya;
Imoto, Yoshinori;
Iwayama, Sho;
Takeuchi, Tetsuya;
Kamiyama, Satoshi;
Miyake, Hideto;
Iwaya, Motoaki

Publication type:

Article

Heavy Ge Doping in GaN via Pulsed Sputtering to Tailor the Optical Bandgap Energy.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202300990

By:

Naito, Aiko;
Ueno, Kohei;
Fujioka, Hiroshi

Publication type:

Article