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Masthead.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202370034
- Publication type:
- Article
Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202370036
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- Publication type:
- Article
Characterization of Lateral and Longitudinal Mode Competition in Blue InGaN Broad‐Ridge Laser Diodes.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200751
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- Publication type:
- Article
DC and Pulse I–V Characteristics of Strain‐Engineered AlGaInN/GaN HEMTs fabricated on Single‐Crystal AlN Substrate.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200733
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- Publication type:
- Article
Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5 GHz.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202370033
- By:
- Publication type:
- Article
Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202370036
- By:
- Publication type:
- Article
Comparative Performance Evaluation for 1.2–10kV Conventional and Superjunction GaN Current Aperture Vertical Electron Transistors.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202300305
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- Publication type:
- Article
Bright Emission at Reverse Bias After Trailing Edge of Driving Pulse in Wide InGaN Quantum Wells.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202300042
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- Publication type:
- Article
Nitride Semiconductors.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202300484
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- Publication type:
- Article
Si‐Doping Effects in AlGaN Channel Layer on Performance of N‐Polar AlGaN/AlN FETs.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200872
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- Publication type:
- Article
Performance and Degradation of Commercial Ultraviolet‐C Light‐Emitting Diodes for Disinfection Purposes.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200900
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- Publication type:
- Article
Investigation of Electrical Properties of N‐Polar AlGaN/AlN Heterostructure Field‐Effect Transistors.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200871
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- Publication type:
- Article
Metal–Organic Chemical Vapor Deposition‐Grown AlScN for Microelectromechanical‐Based Acoustic Filter Applications.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200849
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- Publication type:
- Article
Novel Codoping Moiety to Achieve Enhanced P‐Type Doping in GaN by Ion Implantation.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200848
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- Publication type:
- Article
Effect of Poly‐Crystallinity on the Magnetoelectric Behavior of TiN/AlN/Ni MEMS Cantilevers Investigated by Finite Element Methods.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200839
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- Publication type:
- Article
Electrical Characteristics of Gated Anode Diodes Based on Normally Off Recessed‐Gate GaN High‐Electron‐Mobility Transistors for Rectenna Applications.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200837
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- Publication type:
- Article
Electrothermal Performance of AlGaN/GaN Lateral Transistors with >10 μm Thick GaN Buffer on 200 mm Diameter‐Engineered Substrates.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200843
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- Publication type:
- Article
Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200841
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- Publication type:
- Article
Fabrication of Low On‐Resistance and Normally Off AlGaN/GaN Metal Oxide Semiconductor Heterojunction Field‐Effect Transistors with AlGaN Back Barrier by the Selective Area Regrowth Technique.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200840
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- Publication type:
- Article
Highly Sensitive Hydrogen Sulfide Sensor Based on GaN/GaInN Heterostructure.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200847
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- Publication type:
- Article
Submicrometer‐Thick Step‐Graded AlGaN Buffer on Silicon with a High‐Buffer Breakdown Field.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200846
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- Publication type:
- Article
Low‐Temperature Electrical Transport Properties of Molecular Beam Epitaxy‐Grown Mg‐Doped GaN Subjected to a High‐Temperature Annealing Process.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200769
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- Publication type:
- Article
Realization of Low Dislocation Density AlN on Patterned Sapphire Substrate by Hydride Vapor‐Phase Epitaxy for Deep Ultraviolet Light‐Emitting Diodes.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200835
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- Publication type:
- Article
A Combination of Ion Implantation and High‐Temperature Annealing: Donor–Acceptor Pairs in Carbon‐Implanted AlN.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200485
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- Publication type:
- Article
Vertical GaN Transistor with Semi‐Insulating Channel.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200776
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- Publication type:
- Article
2.2 W/mm at 94 GHz in AlN/GaN/AlN High‐Electron‐Mobility Transistors on SiC.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200774
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- Publication type:
- Article
Performance of Ultraviolet‐B Laser Diodes on AlGaN Templates Prepared Using Different Fabrication Methods.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200836
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- Publication type:
- Article
High‐Resolution Investigation of a Grating‐Stabilized Laser with a Fabry–Pérot Interferometer.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200833
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- Publication type:
- Article
Development of High‐Reflectivity and Antireflection Dielectric Multilayer Mirrors for AlGaN‐Based Ultraviolet‐B Laser Diodes and their Device Applications.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200831
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- Publication type:
- Article
Compositional Mapping of the AlGaN Alloy Composition in Graded Buffer Structures Using Cathodoluminescence.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200830
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- Publication type:
- Article
Analysis of Mechanical Strain in AlGaN/GaN HFETs.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200683
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- Publication type:
- Article
Effect of GaN/AlGaN Buffer Thickness on the Electrothermal Performance of AlGaN/GaN High Electron Mobility Transistors on Engineered Substrates.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200828
- By:
- Publication type:
- Article
Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5 GHz.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202370033
- By:
- Publication type:
- Article
Avoiding Gallium Pollution in Close‐Coupled Showerhead Reactors, Alternative Process Routes.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200824
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- Publication type:
- Article
Defect Dynamics and Internal Quantum Efficiency Decay Resultant Ultraviolet C‐Band Light‐Emitting Diode Lifetime Performance.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200433
- By:
- Publication type:
- Article
Characterization of Lateral and Longitudinal Mode Competition in Blue InGaN Broad‐Ridge Laser Diodes.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200751
- By:
- Publication type:
- Article
Metal Stop Laser Drilling for Blind via Holes of GaN‐on‐GaN Devices.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200739
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- Publication type:
- Article
Suppression of Reverse Leakage in Enhancement‐Mode GaN High‐Electron‐Mobility Transistor by Extended PGaN Technology.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200692
- By:
- Publication type:
- Article
DC and Pulse I–V Characteristics of Strain‐Engineered AlGaInN/GaN HEMTs fabricated on Single‐Crystal AlN Substrate.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200733
- By:
- Publication type:
- Article
Extraction and Optimization of Compact Drain Current Model Parameters for GaN High‐Electron‐Mobility Transistors.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200495
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- Publication type:
- Article
Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200496
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- Publication type:
- Article
Suppression of Impact Ionization by Carbon Doping in the GaN Buffer Layer in InAlN/GaN‐Based High Electron Mobility Transistors.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200490
- By:
- Publication type:
- Article
A Combination of Ion Implantation and High‐Temperature Annealing: The Origin of the 265 nm Absorption in AlN.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200485
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- Publication type:
- Article
Highly Si‐Doped GaN Regrown by Metal–Organic Vapor‐Phase Epitaxy for Ohmic Contact Applied to Quaternary Barrier‐Based High‐Electron‐Mobility Transistors.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200476
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- Publication type:
- Article
Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200458
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- Publication type:
- Article