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Vertical GaN bipolar devices: Gaining competitive advantage from photon recycling.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600489
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- Publication type:
- Article
Time-resolved spectroscopy of luminescence in a wide gap Si-doped β-Ga<sub>2</sub>O<sub>3</sub>.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600670
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- Publication type:
- Article
AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600555
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- Publication type:
- Article
Dynamic characteristics of 20-layer stacked QD-SOA with strain compensation technique by ultrafast signals using optical frequency comb.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600557
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- Publication type:
- Article
Dynamic characteristics of 20-layer stacked QD-SOA with strain compensation technique by ultrafast signals using optical frequency comb (Phys. Status Solidi A 3∕2017).
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201770114
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- Publication type:
- Article
The improvement of stable resistive switching in Al/ZnO/Al heterostructures by integration of amorphous carbon layers (Phys. Status Solidi A 3∕2017).
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201770116
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- Publication type:
- Article
Issue Information.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201770115
- Publication type:
- Article
Compound Semiconductors.
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- 2017
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- Publication type:
- Other
Contents.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201770117
- Publication type:
- Article
Information for authors.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201770119
- Publication type:
- Article
Effects of polysilane-doped spiro-OMeTAD hole transport layers on photovoltaic properties.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600591
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- Publication type:
- Article
The impact of interface and border traps on current-voltage, capacitance-voltage, and split-CV mobility measurements in InGaAs MOSFETs.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600592
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- Publication type:
- Article
Effect of thickness and microstructure of TiO<sub>2</sub> shell on photocatalytic performance of magnetic separable Fe<sub>3</sub>O<sub>4</sub>/SiO<sub>2</sub>/mTiO<sub>2</sub> core-shell composites.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600665
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- Publication type:
- Article
Pentacene memory transistors with a monolayer of ligand-removed semiconductor colloidal nanodots used as a charge-trapping layer.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600545
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- Publication type:
- Article
Comparative study on noise characteristics of As and Sb-based high electron mobility transistors.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600599
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- Publication type:
- Article
The improvement of stable resistive switching in Al/ZnO/Al heterostructures by integration of amorphous carbon layers.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600739
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- Publication type:
- Article
A novel nanoscale-crossbar resistive switching memory using a copper chemical displacement technique.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600595
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- Publication type:
- Article
Fabrication of Ag dispersed ZnO films by molecular precursor method and application in GaInN blue LED.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600598
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- Publication type:
- Article
Experimental demonstration of strain detection using resonant tunneling delta-sigma modulation sensors.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600548
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- Publication type:
- Article
Room temperature ultraviolet light-emitting ZnO vertical nanowires prepared by electrochemical growth.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600473
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- Publication type:
- Article
Fabrication of InGaN/GaN MQW nano-LEDs by hydrogen-environment anisotropic thermal etching.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600613
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- Publication type:
- Article
Neutral beam etching for device isolation in AlGaN/GaN HEMTs.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600617
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- Publication type:
- Article
Influence of the Al content of the AlGaN buffer layer in AlGaN/GaN high-electron-mobility transistor structures on a Si substrate.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600618
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- Publication type:
- Article
Electro-mechanical properties of inkjet-printed graphene oxide nanosheets.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600492
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- Publication type:
- Article
Design of power integrated circuits in full AlGaN/GaN MIS-HEMT configuration for power conversion.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600562
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- Publication type:
- Article
Epitaxial lateral overgrowth of Ga <sub>x</sub>In<sub>1 − x</sub>P toward direct Ga <sub>x</sub>In<sub>1 − x</sub>P/Si heterojunction.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600631
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- Publication type:
- Article
Annealing effects on the properties of InGaAsN/GaAsSb type-II quantum well diodes grown on InP substrates.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600510
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- Publication type:
- Article
Fabrication of Ag nanostructures by the systematic control of annealing temperature and duration on GaN (0001) via the solid state dewetting.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600702
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- Publication type:
- Article
Analysis of the losses of industrial-type PERC solar cells.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600708
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- Publication type:
- Article
Structural and electrical properties of InAs/GaSb superlattices grown by metalorganic vapor phase epitaxy for midwavelength infrared detectors.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600582
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- Publication type:
- Article
Improvement of 1.0 eV GaInNAsSb solar cell performance upon optimal annealing.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600586
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- Publication type:
- Article
Asymmetric contact in tin bismuth oxide thin film transistors.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600589
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- Publication type:
- Article
Mid-infrared optical and electrical properties of indium tin oxide films.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600467
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- Publication type:
- Article
Chemical lift-off process for nitride LEDs from an Eco-GaN template using an AlN/strip-patterned-SiO<sub>2</sub> sacrificial layer.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600657
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- Publication type:
- Article
Highly efficient organic photovoltaic cells fabricated by electrospray deposition using a non-halogenated solution.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600536
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- Publication type:
- Article
Optimization of the source field-plate design for low dynamic R<sub>DS-ON</sub> dispersion of AlGaN/GaN MIS-HEMTs.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600601
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- Publication type:
- Article
Improvement of m-plane ZnO films formed on buffer layers on sapphire substrates by mist chemical vapor deposition.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600603
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- Publication type:
- Article
Structural, electrical, and optical properties of polycrystalline NbO<sub>2</sub> thin films grown on glass substrates by solid phase crystallization.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600604
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- Publication type:
- Article
Incident light angle dependence of microwalled silicon solar cell efficiency for fracture transfer printing applications.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600724
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- Publication type:
- Article
Effect of micromorphology on transport properties of Nb-doped anatase TiO<sub>2</sub> films: A transmission electron microscopy study.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600606
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- Publication type:
- Article
ITO/nano-Ag plasmonic window applied for efficiency improvement of near-ultraviolet light emitting diodes.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600609
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- Publication type:
- Article
Trapping mechanisms in insulated-gate GaN power devices: Understanding and characterization techniques.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600607
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- Publication type:
- Article