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Preparation and characterization of methylammonium tin iodide layers as photovoltaic absorbers (Phys. Status Solidi A 4∕2016).
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 841, doi. 10.1002/pssa.201670622
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- Publication type:
- Article
Issue Information.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 842, doi. 10.1002/pssa.201670623
- Publication type:
- Article
Contents.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 843, doi. 10.1002/pssa.201670625
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- Article
Recent and forthcoming publications in pss.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 849, doi. 10.1002/pssa.201670626
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- Article
Compound Semiconductors.
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- 2016
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- Publication type:
- Other
Growth and impurity characterization of AlN on (0001) sapphire grown by spatially pulsed MOCVD.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 851, doi. 10.1002/pssa.201532571
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- Article
Uniform growth of III-nitrides on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 856, doi. 10.1002/pssa.201532708
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- Publication type:
- Article
Toward reliable MIS- and MOS-gate structures for GaN lateral power devices.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 861, doi. 10.1002/pssa.201532873
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- Publication type:
- Article
Off-state drain leakage reduction by post metallization annealing for Al<sub>2</sub>O<sub>3</sub>/GaN/AlGaN/GaN MOSHEMTs on Si.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 868, doi. 10.1002/pssa.201532730
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- Publication type:
- Article
Above 2000 V breakdown voltage at 600 K GaN-on-silicon high electron mobility transistors.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 873, doi. 10.1002/pssa.201532572
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- Publication type:
- Article
High breakdown voltage p-n diodes on GaN on sapphire by MOCVD.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 878, doi. 10.1002/pssa.201532554
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- Publication type:
- Article
Direct observation of nanometer-scale gate leakage paths in AlGaN/GaN and InAlN/AlN/GaN HEMT structures.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 883, doi. 10.1002/pssa.201532547
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- Publication type:
- Article
GaN HEMTs with quaternary In<sub>0.05</sub>Al<sub>0.75</sub>Ga<sub>0.2</sub>N Schottky barrier layer.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 889, doi. 10.1002/pssa.201532566
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- Publication type:
- Article
Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate process.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 893, doi. 10.1002/pssa.201532570
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- Publication type:
- Article
Atomistic study of band structure and transport in extremely thin channel InP MOSFETs.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 898, doi. 10.1002/pssa.201532727
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- Publication type:
- Article
Performance projection of III-nitride heterojunction nanowire tunneling field-effect transistors.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 905, doi. 10.1002/pssa.201532564
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- Publication type:
- Article
SciFab -a wafer-level heterointegrated InP DHBT/SiGe BiCMOS foundry process for mm-wave applications.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 909, doi. 10.1002/pssa.201532549
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- Publication type:
- Article
Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 917, doi. 10.1002/pssa.201532732
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- Publication type:
- Article
Charge-layer design considerations in SAGCM InGaAs/InAlAs avalanche photodiodes.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 925, doi. 10.1002/pssa.201532556
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- Publication type:
- Article
Study of electro-optic effect in asymmetrically ramped AlInGaAs multiple quantum well structures.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 930, doi. 10.1002/pssa.201532559
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- Publication type:
- Article
InGaN/GaN core/shell nanowires for visible to ultraviolet range photodetection.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 936, doi. 10.1002/pssa.201532573
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- Publication type:
- Article
Analysis of luminescent coupling effects in n series-connected multijunction solar cells.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 941, doi. 10.1002/pssa.201532686
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- Publication type:
- Article
Effect of quantum well shape and width on deep ultraviolet emission in AlGaN nanowire LEDs.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 947, doi. 10.1002/pssa.201532735
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- Publication type:
- Article
Estimation of roughness-induced scattering losses in III-nitride laser diodes with a photoelectrochemically etched current aperture.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 953, doi. 10.1002/pssa.201532540
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- Publication type:
- Article
InAs/GaAs quantum dot lasers with GaP strain-compensation layers grown by molecular beam epitaxy.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 958, doi. 10.1002/pssa.201532555
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- Publication type:
- Article
Q factor improvement by capsule-shaped metallic cavity structure for subwavelength lasers.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 965, doi. 10.1002/pssa.201532561
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- Publication type:
- Article
56 Gb/s L-band InGaAlAs ridge waveguide electroabsorption modulated laser with integrated SOA.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 970, doi. 10.1002/pssa.201532568
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- Publication type:
- Article
Preparation and characterization of methylammonium tin iodide layers as photovoltaic absorbers.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 975, doi. 10.1002/pssa.201532594
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- Publication type:
- Article
Fabrication of graphene-based 3D structures by stereolithography.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 982, doi. 10.1002/pssa.201532761
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- Publication type:
- Article
Improvement of thermoelectric performance of α-In<sub>2</sub>Se<sub>3</sub> upon S incorporation.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 986, doi. 10.1002/pssa.201532743
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- Publication type:
- Article
Flower-like TiO<sub>2</sub> with highly exposed {001} facets used as scattering layers for dye-sensitized solar cells.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 994, doi. 10.1002/pssa.201532461
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- Publication type:
- Article
Synthesis of wide bandgap Ga<sub>2</sub>O<sub>3</sub> ( E<sub>g</sub> ∼ 4.6-4.7 eV) thin films on sapphire by low pressure chemical vapor deposition.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 1002, doi. 10.1002/pssa.201532711
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- Publication type:
- Article
Effects of silicon doping on the performance of tin oxide thin film transistors.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 1010, doi. 10.1002/pssa.201532774
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- Publication type:
- Article
CrSi(O,N)-based cermet-like material for high-ohmic thin film resistor applications.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 1016, doi. 10.1002/pssa.201532669
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- Publication type:
- Article
Length-dependent broadband electric properties of PMMA composites filled with carbon nanotubes.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 1025, doi. 10.1002/pssa.201532289
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- Publication type:
- Article
Improved Schottky contacts to InGaN alloys by a photoelectrochemical treatment.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 1034, doi. 10.1002/pssa.201532717
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- Publication type:
- Article
Source and effects of sodium in solution-processed kesterite solar cells.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 1039, doi. 10.1002/pssa.201532619
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- Publication type:
- Article
A hybrid memristor-CMOS XOR gate for nonvolatile logic computation.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 1050, doi. 10.1002/pssa.201532872
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- Publication type:
- Article
Transmission electron microscopy study for investigating high-temperature reliability of Ti<sub>10</sub> W<sub>90</sub>-based and Ta-based diffusion barriers up to 600°C.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 1055, doi. 10.1002/pssa.201532654
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- Publication type:
- Article
Optical vortex pulse illumination to create chiral monocrystalline silicon nanostructures.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 1063, doi. 10.1002/pssa.201532661
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- Publication type:
- Article
Commercial alumina templates as base to fabricate 123-type high- T<sub>c</sub> superconductor nanowires.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 1069, doi. 10.1002/pssa.201532475
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- Publication type:
- Article
Influence of BaO-CaO-SiO<sub>2</sub> on dielectric properties and reliability of BaTiO<sub>3</sub>-based ceramics.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 1077, doi. 10.1002/pssa.201532706
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- Publication type:
- Article
Light-controlled resistive switching in laser-assisted annealed Ba<sub>0.8</sub>Sr<sub>0.2</sub>TiO<sub>3</sub> thin films.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 1082, doi. 10.1002/pssa.201532636
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- Publication type:
- Article
Thermoelectric enhancement in the two-dimensional electron gas of AlGaN/GaN heterostructures.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 1088, doi. 10.1002/pssa.201532653
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- Publication type:
- Article
Information for authors.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 1093, doi. 10.1002/pssa.201670628
- Publication type:
- Article
Estimation of roughness-induced scattering losses in III-nitride laser diodes with a photoelectrochemically etched current aperture (Phys. Status Solidi A 4∕2016).
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 1096, doi. 10.1002/pssa.201670624
- By:
- Publication type:
- Article