Works in Physica Status Solidi. A: Applications & Materials Science, 2012, Vol 209, Issue 1


Results: 51
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    Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells.

    Published in:
    Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 1, p. 17, doi. 10.1002/pssa.201100188
    By:
    • Valdueza-Felip, Sirona;
    • Rigutti, Lorenzo;
    • Naranjo, Fernando B.;
    • Lacroix, Bertrand;
    • Fernández, Susana;
    • Ruterana, Pierre;
    • Julien, François H.;
    • González-Herráez, Miguel;
    • Monroy, Eva
    Publication type:
    Article
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    InN grown by migration enhanced afterglow (MEAglow).

    Published in:
    Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 1, p. 41, doi. 10.1002/pssa.201100102
    By:
    • Butcher, Kenneth Scott A.;
    • Alexandrov, Dimiter;
    • Terziyska, Penka;
    • Georgiev, Vasil;
    • Georgieva, Dimka;
    • Binsted, Peter W.
    Publication type:
    Article
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    Simple models for InGaN alloys.

    Published in:
    Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 1, p. 79, doi. 10.1002/pssa.201100147
    By:
    • Elfituri, Fathi;
    • Hourahine, Ben
    Publication type:
    Article
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    Taming transport in InN.

    Published in:
    Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 1, p. 83, doi. 10.1002/pssa.201100069
    By:
    • Ager, Joel W.;
    • Miller, Nate R.
    Publication type:
    Article
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    Mechanism of surface proton transfer doping in pentacene based organic thin-film transistors.

    Published in:
    Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 1, p. 181, doi. 10.1002/pssa.201127595
    By:
    • Ausserlechner, Simon J.;
    • Gruber, Manfred;
    • Hetzel, Reinhold;
    • Flesch, Heinz-Georg;
    • Ladinig, Lukas;
    • Hauser, Lucas;
    • Haase, Anja;
    • Buchner, Michael;
    • Resel, Roland;
    • Schürrer, Ferdinand;
    • Stadlober, Barbara;
    • Trimmel, Gregor;
    • Zojer, Karin;
    • Zojer, Egbert
    Publication type:
    Article
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    GaN-based p-i-n X-ray detection.

    Published in:
    Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 1, p. 204, doi. 10.1002/pssa.201127446
    By:
    • Yao, Changsheng;
    • Fu, Kai;
    • Wang, Guo;
    • Yu, Guohao;
    • Lu, Min
    Publication type:
    Article
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