INVESTIGATION OF Si RELATED DEEP ACCEPTOR LEVEL IN AS GROWN GaN BY DLTS.
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- Journal of Ovonic Research, 2017, v. 13, n. 1, p. 7
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Works matching IS 18422403 AND DT 2017 AND VI 13 AND IP 1
Results: 2
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FABRICATION OF SRAM MEMORY DEVICES USING Co-DOPED SnO<sub>2</sub> NANOPARTICLES.
- Published in:
- Journal of Ovonic Research, 2017, v. 13, n. 1, p. 1
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- Publication type:
- Article