Works matching IS 18414834 AND DT 2023 AND VI 20 AND IP 3

Results: 6

Study and modeling of a CdS/PbS betavoltaic cell by Monte Carlo simulation.

Published in:

Chalcogenide Letters, 2023, v. 20, n. 3, p. 227, doi. 10.15251/CL.2023.203.227

By:

Moughli, H.;
Azeddine, B.;
Tiouti, Z.;
Rajczyk, M.

Publication type:

Article

Effects of pressure on structural, mechanical, and electronic properties of chalcopyrite compound CuAlS2.

Published in:

Chalcogenide Letters, 2023, v. 20, n. 3, p. 215, doi. 10.15251/CL.2023.203.215

By:

Geng, J.;
Wu, J.

Publication type:

Article

Determining the majority charge carrier, optical and structural properties of electrochemically deposited lead tin sulfide (PbSnS) thin films.

Published in:

Chalcogenide Letters, 2023, v. 20, n. 3, p. 205, doi. 10.15251/CL.2023.203.205

By:

Nkrumah, I.;
Ampong, F. K.;
Britwum, A.;
Paal, M.;
Kwakye-Awuah, B.;
Nkum, R. K.;
Boakye, F.

Publication type:

Article

Preparation and analysis of Ag2Se1-xTe x thin film structure on the physical properties at various temperatures by thermal evaporation.

Published in:

Chalcogenide Letters, 2023, v. 20, n. 3, p. 197, doi. 10.15251/CL.2023.203.197

By:

Ali, Hiba M.;
Khudayer, I.

Publication type:

Article

Physical properties of Mg doped ZnS thin films via spray pyrolysis.

Published in:

Chalcogenide Letters, 2023, v. 20, n. 3, p. 187, doi. 10.15251/CL.2023.203.187

By:

Ali, R. S.;
Rasheed, H. S.;
Abdulameer, N. D.;
Habubi, N. F.;
Chiad, S. S.

Publication type:

Article

Voltage and frequency controlled Ge/SeO2 thin film transistors designed as rectifiers, negative capacitance and negative conductance sources.

Published in:

Chalcogenide Letters, 2023, v. 20, n. 3, p. 177, doi. 10.15251/CL.2023.203.177

By:

Qasrawi, A. F.;
Khanfar, Hazem K.

Publication type:

Article

Works matching IS 18414834 AND DT 2023 AND VI 20 AND IP 3

Study and modeling of a CdS/PbS betavoltaic cell by Monte Carlo simulation.

Effects of pressure on structural, mechanical, and electronic properties of chalcopyrite compound CuAlS<sub>2</sub>.

Determining the majority charge carrier, optical and structural properties of electrochemically deposited lead tin sulfide (PbSnS) thin films.

Preparation and analysis of Ag<sub>2</sub>Se<sub>1-x</sub>Te <sub>x</sub> thin film structure on the physical properties at various temperatures by thermal evaporation.

Physical properties of Mg doped ZnS thin films via spray pyrolysis.

Voltage and frequency controlled Ge/SeO<sub>2</sub> thin film transistors designed as rectifiers, negative capacitance and negative conductance sources.