Works matching IS 18414834 AND DT 2022 AND VI 19 AND IP 10
Results: 10
Thermal stability and glass transition kinetics in GeTeSb glasses by using non-isothermal measurement.
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- Chalcogenide Letters, 2022, v. 19, n. 10, p. 735, doi. 10.15251/CL.2022.1910.735
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Structure of iron- doped lead sulphide (PbS) thin films made by SILAR technique for media room applications.
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- Chalcogenide Letters, 2022, v. 19, n. 10, p. 753, doi. 10.15251/CL.2022.1910.753
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Physical properties and electronic structure of chalcogenide perovskite BaZrS3 under pressure.
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- Chalcogenide Letters, 2022, v. 19, n. 10, p. 743, doi. 10.15251/CL.2022.1910.743
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Development of chitosan base PbBiS2 thin films for photovoltaic application.
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- Chalcogenide Letters, 2022, v. 19, n. 10, p. 725, doi. 10.15251/CL.2022.1910.725
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Effect of thulium oxide on structural, refractive index, and optical band gap of bismuth-boro-tellurite glass system.
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- Chalcogenide Letters, 2022, v. 19, n. 10, p. 715, doi. 10.15251/CL.2022.1910.715
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Spectroscopic ellipsometry and photovoltaic characteristics for n-CdS/p-Cu2ZnSnS4 heterojunction by annealing for solar cells.
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- Chalcogenide Letters, 2022, v. 19, n. 10, p. 701, doi. 10.15251/CL.2022.1910.701
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?halcogenide glassy semiconductors of the system As-Se-S doped by Te for X-ray imaging.
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- Chalcogenide Letters, 2022, v. 19, n. 10, p. 683, doi. 10.15251/CL.2022.1910.683
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Impact of the annealing temperature on the structural, morphology and optical properties of bilayer thin films In/Se prepared by thermal evaporation method.
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- Chalcogenide Letters, 2022, v. 19, n. 10, p. 673, doi. 10.15251/CL.2022.1910.673
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Study the properties of Cu2Se thin films for optoelectronic applications.
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- Chalcogenide Letters, 2022, v. 19, n. 10, p. 663, doi. 10.15251/CL.2022.1910.663
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Physical properties of Cu<sub>2</sub>MgSnS<sub>4</sub> thin films prepared by chemical spray pyrolysis technique: The effect of thiourea concentration.
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- Chalcogenide Letters, 2022, v. 19, n. 10, p. 691, doi. 10.15251/CL.2022.1910.691
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