Physical insight into turn‐on transient of silicon carbide gate turn‐off thyristor.
- Published in:
- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 7, p. 878, doi. 10.1049/pel2.12706
- By:
- Publication type:
- Article
Works matching IS 17554535 AND DT 2024 AND VI 17 AND IP 7
Results: 7
1
2
A seven‐level switched‐capacitor based transformerless inverter with modified PWM strategy to enhance the performance of grid‐connected PV systems.
- Published in:
- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 7, p. 855, doi. 10.1049/pel2.12701
- By:
- Publication type:
- Article
3
Investigations of 4H‐SiC trench MOSFET with integrated high‐K deep trench and gate dielectric.
- Published in:
- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 7, p. 869, doi. 10.1049/pel2.12700
- By:
- Publication type:
- Article
4
On performance evaluation of high‐power, high‐bandwidth current measurement technologies for SiC switching devices.
- Published in:
- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 7, p. 834, doi. 10.1049/pel2.12699
- By:
- Publication type:
- Article
5
Second‐harmonic current reduction of dual active bridge with triple‐phase shift in two‐stage single‐phase inverter system.
- Published in:
- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 7, p. 824, doi. 10.1049/pel2.12695
- By:
- Publication type:
- Article
6
A high step‐up high step‐down coupled inductor based bidirectional DC–DC converter with low voltage stress on switches.
- Published in:
- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 7, p. 802, doi. 10.1049/pel2.12694
- By:
- Publication type:
- Article
7
Design and validation of a novel semiconductor area optimised 3300 V SiC half bridge for MMC.
- Published in:
- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 7, p. 789, doi. 10.1049/pel2.12693
- By:
- Publication type:
- Article