Works matching IS 17554535 AND DT 2024 AND VI 17 AND IP 12
Results: 10
An RC snubber design method to achieve optimized switching noise‐loss trade‐off of cascode GaN HEMTs.
- Published in:
- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 12, p. 1583, doi. 10.1049/pel2.12741
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- Article
Study on gate‐source voltage oscillation suppression in SiC MOSFETs based on LCR parallel branch.
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- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 12, p. 1507, doi. 10.1049/pel2.12714
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- Article
Investigation into active‐gate‐driving performance and potential closed‐loop controller implementations for silicon carbide MOSFET modules.
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- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 12, p. 1540, doi. 10.1049/pel2.12698
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- Article
A review of intentional electromagnetic interference in power electronics: Conducted and radiated susceptibility.
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- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 12, p. 1487, doi. 10.1049/pel2.12685
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- Article
A practical ball‐grid‐array transition modelling methodology for accurate and fast multi‐interposer package simulation.
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- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 12, p. 1607, doi. 10.1049/pel2.12667
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- Article
Far field radiated emissions prediction of a flyback adapter with curved cables utilizing electromagnetic simulation method.
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- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 12, p. 1552, doi. 10.1049/pel2.12655
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- Article
Common mode far field radiation mechanisms and prediction of a buck converter with cables based on common mode voltage mutation method.
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- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 12, p. 1567, doi. 10.1049/pel2.12652
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- Article
Magnetic integration of a symmetrical LCL filter in the grid‐tied inverter with reduced EMI noise.
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- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 12, p. 1526, doi. 10.1049/pel2.12643
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- Article
New resonant composite magnetic‐field probes with high detection sensitivity and electric‐field suppression ratio.
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- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 12, p. 1520, doi. 10.1049/pel2.12635
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- Publication type:
- Article
A remaining useful life prediction method of SiC MOSFET considering failure threshold uncertainty.
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- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 12, p. 1594, doi. 10.1049/pel2.12611
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- Article