Works matching IS 17554535 AND DT 2020 AND VI 13 AND IP 3
Results: 23
Virtual synchronous generator strategy for suppressing output power fluctuation without additional energy storage.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 602, doi. 10.1049/iet-pel.2019.0660
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- Article
Hybrid full-bridge converter with wide output voltage for high-power applications.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 592, doi. 10.1049/iet-pel.2019.0793
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- Article
Coupled-inductor-based high-gain converter utilising magnetising inductance to achieve soft-switching with low voltage stress on devices.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 576, doi. 10.1049/iet-pel.2018.6147
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- Article
Second-order lead compensator-based quadrature PLL for sensorless interior permanent magnet synchronous motor control.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 568, doi. 10.1049/iet-pel.2019.0822
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- Article
Systematic design of linear quadratic regulator for digitally controlled grid-connected inverters.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 557, doi. 10.1049/iet-pel.2019.0514
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- Article
High-gain three-phase current-fed push-pull DC-DC converter.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 545, doi. 10.1049/iet-pel.2019.0843
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- Article
High efficiency wide input extreme output (WIEO) tapped inductor buck-boost converter for high power LED lighting.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 535, doi. 10.1049/iet-pel.2018.5785
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- Article
GaN-based split phase transformer-less PV inverter with auxiliary ZVT circuit.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 525, doi. 10.1049/iet-pel.2019.0498
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- Article
Modelling and optimisation of planar matrix transformer for high frequency regulated LLC converter.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 516, doi. 10.1049/iet-pel.2019.0397
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- Article
Family of DTMRC-based DC-DC converters with an RZP.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 505, doi. 10.1049/iet-pel.2019.0372
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- Article
Soft-switching DC-DC converter with controllable resonant tank featuring high efficiency and wide voltage gain range.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 495, doi. 10.1049/iet-pel.2019.0307
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- Article
All SiC PWM rectifier-based off-board ultrafast charger for heavy electric vehicles.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 483, doi. 10.1049/iet-pel.2019.0583
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- Article
High-frequency resonant operation of an integrated medium-voltage SiC MOSFET power module.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 475, doi. 10.1049/iet-pel.2019.0413
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- Article
Low-cost analogue active gate driver for SiC MOSFET to enable operation in higher parasitic environment.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 463, doi. 10.1049/iet-pel.2019.0589
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- Article
Temperature-dependent dynamic R<sub>DS,ON</sub> under different operating conditions in enhancement-mode GaN HEMTs.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 456, doi. 10.1049/iet-pel.2019.0540
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- Article
Review and analysis of SiC MOSFETs' ruggedness and reliability.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 445, doi. 10.1049/iet-pel.2019.0587
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- Article
Analytical model for predicting the junction temperature of chips considering the internal electrothermal coupling inside SiC metal-oxide-semiconductor field-effect transistor modules.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 436, doi. 10.1049/iet-pel.2019.0588
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- Article
Model parameter calibration method of SiC power MOSFETs behavioural model.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 426, doi. 10.1049/iet-pel.2019.0400
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- Article
High-temperature electrical performances and physics-based analysis of p-GaN HEMT device.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 420, doi. 10.1049/iet-pel.2019.0510
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- Article
Analysis of cascaded silicon carbide MOSFETs using a single gate driver for medium voltage applications.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 413, doi. 10.1049/iet-pel.2019.0573
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- Article
Hybrid 3.3 kV/450 A half-bridge IGBT power module with SiC Schottky barrier diodes.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 405, doi. 10.1049/iet-pel.2019.0412
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- Article
Recent advances and trend of HEV/EVoriented power semiconductors - an overview.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 394, doi. 10.1049/iet-pel.2019.0401
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Guest Editorial: WBG semiconductor power electronics for industrial and automotive applications.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 391, doi. 10.1049/iet-pel.2020.0051
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- Article