Guest Editorial: Selected Papers from Semiconductor and Integrated Optoelectronics (SIOE) 2018.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2019, v. 13, n. 1, p. 1, doi. 10.1049/iet-opt.2018.5142
- Publication type:
- Article
Works matching IS 17518768 AND DT 2019 AND VI 13 AND IP 1
Results: 17
1
2
Restraining effect of film thickness on the behaviour of amplified spontaneous emission from methylammonium lead iodide perovskite.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2019, v. 13, n. 1, p. 2, doi. 10.1049/iet-opt.2018.5035
- By:
- Publication type:
- Article
3
Evaluating resonances in PCSEL structures based on modal indices.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2019, v. 13, n. 1, p. 17, doi. 10.1049/iet-opt.2018.5033
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- Publication type:
- Article
4
Impact of thermal annealing on internal device parameters of GaAs<sub>0.965</sub>Bi<sub>0.035</sub>/GaAs<sub>0.75</sub>P<sub>0.25</sub> quantum well lasers.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2019, v. 13, n. 1, p. 12, doi. 10.1049/iet-opt.2018.5031
- By:
- Publication type:
- Article
5
Physical modelling of InGaAs-InAlAs APD and PIN photodetectors for >25 Gb/s data rate applications.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2019, v. 13, n. 1, p. 40, doi. 10.1049/iet-opt.2018.5030
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- Publication type:
- Article
6
Ultrashort pulse generation in a semiconductor laser with strong coherent optical feedback.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2019, v. 13, n. 1, p. 36, doi. 10.1049/iet-opt.2018.5010
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- Publication type:
- Article
7
Generation of optical frequency combs using a photonic crystal cavity.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2019, v. 13, n. 1, p. 23, doi. 10.1049/iet-opt.2018.5026
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- Publication type:
- Article
8
Operating regimes of a controlled dual‐wavelength semiconductor laser system through four‐wave mixing‐ mediated by injection‐locking.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2019, v. 13, n. 1, p. 27, doi. 10.1049/iet-opt.2018.5019
- By:
- Publication type:
- Article
9
Ultrashort pulse generation in a semiconductor laser with strong coherent optical feedback.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2019, v. 13, n. 1, p. 36, doi. 10.1049/iet-opt.2018.5010
- By:
- Publication type:
- Article
10
Physical modelling of InGaAs–InAlAs APD and PIN photodetectors for >25 Gb/s data rate applications.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2019, v. 13, n. 1, p. 40, doi. 10.1049/iet-opt.2018.5030
- By:
- Publication type:
- Article
11
Thermodynamic processes on a semiconductor surface during in‐situ multi‐beam laser interference patterning.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2019, v. 13, n. 1, p. 7, doi. 10.1049/iet-opt.2018.5028
- By:
- Publication type:
- Article
12
Operating regimes of a controlled dual-wavelength semiconductor laser system through four-wave mixing-mediated by injection-locking.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2019, v. 13, n. 1, p. 27, doi. 10.1049/iet-opt.2018.5019
- By:
- Publication type:
- Article
13
Generation of optical frequency combs using a photonic crystal cavity.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2019, v. 13, n. 1, p. 23, doi. 10.1049/iet-opt.2018.5026
- By:
- Publication type:
- Article
14
Evaluating resonances in PCSEL structures based on modal indices.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2019, v. 13, n. 1, p. 17, doi. 10.1049/iet-opt.2018.5033
- By:
- Publication type:
- Article
15
Impact of thermal annealing on internal device parameters of GaAs<sub>0.965</sub>Bi<sub>0.035</sub>/GaAs<sub>0.75</sub>P<sub>0.25</sub> quantum well lasers.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2019, v. 13, n. 1, p. 12, doi. 10.1049/iet-opt.2018.5031
- By:
- Publication type:
- Article
16
Thermodynamic processes on a semiconductor surface during in-situ multibeam laser interference patterning.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2019, v. 13, n. 1, p. 7, doi. 10.1049/iet-opt.2018.5028
- By:
- Publication type:
- Article
17
Restraining effect of film thickness on the behaviour of amplified spontaneous emission from methylammonium lead iodide perovskite.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2019, v. 13, n. 1, p. 2, doi. 10.1049/iet-opt.2018.5035
- By:
- Publication type:
- Article