Works matching IS 17518768 AND DT 2014 AND VI 8 AND IP 2
Results: 20
Design optimisation of metallic sub‐wavelength nanowire lasers.
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- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 129, doi. 10.1049/iet-opt.2013.0059
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- Article
Feasibility of GaAs‐based metal strip surface plasmon nano‐lasers.
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- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 122, doi. 10.1049/iet-opt.2013.0069
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- Article
Simulated dynamics of optically pumped dilute nitride 1300 nm spin vertical‐cavity surface‐emitting lasers.
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- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 117, doi. 10.1049/iet-opt.2013.0044
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- Article
Optical tracking of drug release from porous silicon delivery vectors.
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- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 113, doi. 10.1049/iet-opt.2013.0080
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- Article
Generation of 140 fs pulse train with widely tunable repetition rate through cascaded fibre compression techniques.
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- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 108, doi. 10.1049/iet-opt.2013.0071
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- Publication type:
- Article
Factors influencing brightness and beam quality of conventional and distributed Bragg reflector tapered laser diodes in absence of self‐heating.
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- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 99, doi. 10.1049/iet-opt.2013.0082
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- Publication type:
- Article
Bistability of threshold in quantum dash‐in‐a‐well lasers.
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- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 94, doi. 10.1049/iet-opt.2013.0083
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- Publication type:
- Article
Effect of non‐pinned carrier density above threshold in InAs quantum dot and quantum dash lasers.
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- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 88, doi. 10.1049/iet-opt.2013.0055
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- Publication type:
- Article
Modelling of quantum dot intermediate band solar cells: effect of intermediate band linewidth broadening.
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- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 81, doi. 10.1049/iet-opt.2013.0068
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- Publication type:
- Article
Carrier extraction from GaSb quantum rings in GaAs solar cells using direct laser excitation.
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- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 76, doi. 10.1049/iet-opt.2013.0062
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- Publication type:
- Article
Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices.
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- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 71, doi. 10.1049/iet-opt.2013.0056
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- Publication type:
- Article
Development and characterisation of laser power converters for optical power transfer applications.
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- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 64, doi. 10.1049/iet-opt.2013.0066
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- Publication type:
- Article
Modelling the dynamics of a micro‐cavity switch.
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- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 58, doi. 10.1049/iet-opt.2013.0072
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- Publication type:
- Article
Analysis of frequency chirp of self‐injected nanostructure semiconductor lasers.
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- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 51, doi. 10.1049/iet-opt.2013.0078
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- Publication type:
- Article
Numerical simulation of a mode‐locked quantum dot external cavity laser.
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- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 44, doi. 10.1049/iet-opt.2013.0040
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- Publication type:
- Article
Theoretical study of line narrowing in a sub‐terahertz monolithic dual laser source with an integrated reflector.
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- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 40, doi. 10.1049/iet-opt.2013.0070
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- Publication type:
- Article
Efficient terahertz devices based on III–V semiconductor photoconductors.
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- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 33, doi. 10.1049/iet-opt.2013.0057
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- Publication type:
- Article
Low‐strain, quantum‐cascade‐laser active regions grown on metamorphic buffer layers for emission in the 3.0–4.0 μm wavelength region.
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- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 25, doi. 10.1049/iet-opt.2013.0060
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- Publication type:
- Article
Electrically pumped continuous‐wave 1.3‐µm InAs/GaAs quantum dot lasers monolithically grown on Si substrates.
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- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 20, doi. 10.1049/iet-opt.2013.0093
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- Article
Editorial: Semiconductor lasers and integrated optoelectronics.
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- 2014
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- Publication type:
- Editorial