Development and characterisation of laser power converters for optical power transfer applications.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 64, doi. 10.1049/iet-opt.2013.0066
- By:
- Publication type:
- Article
Works matching IS 17518768 AND DT 2014 AND VI 8 AND IP 2
Results: 20
1
2
Analysis of frequency chirp of self‐injected nanostructure semiconductor lasers.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 51, doi. 10.1049/iet-opt.2013.0078
- By:
- Publication type:
- Article
3
Design optimisation of metallic sub‐wavelength nanowire lasers.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 129, doi. 10.1049/iet-opt.2013.0059
- By:
- Publication type:
- Article
4
Feasibility of GaAs‐based metal strip surface plasmon nano‐lasers.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 122, doi. 10.1049/iet-opt.2013.0069
- By:
- Publication type:
- Article
5
Simulated dynamics of optically pumped dilute nitride 1300 nm spin vertical‐cavity surface‐emitting lasers.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 117, doi. 10.1049/iet-opt.2013.0044
- By:
- Publication type:
- Article
6
Optical tracking of drug release from porous silicon delivery vectors.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 113, doi. 10.1049/iet-opt.2013.0080
- By:
- Publication type:
- Article
7
Generation of 140 fs pulse train with widely tunable repetition rate through cascaded fibre compression techniques.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 108, doi. 10.1049/iet-opt.2013.0071
- By:
- Publication type:
- Article
8
Factors influencing brightness and beam quality of conventional and distributed Bragg reflector tapered laser diodes in absence of self‐heating.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 99, doi. 10.1049/iet-opt.2013.0082
- By:
- Publication type:
- Article
9
Bistability of threshold in quantum dash‐in‐a‐well lasers.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 94, doi. 10.1049/iet-opt.2013.0083
- By:
- Publication type:
- Article
10
Effect of non‐pinned carrier density above threshold in InAs quantum dot and quantum dash lasers.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 88, doi. 10.1049/iet-opt.2013.0055
- By:
- Publication type:
- Article
11
Modelling of quantum dot intermediate band solar cells: effect of intermediate band linewidth broadening.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 81, doi. 10.1049/iet-opt.2013.0068
- By:
- Publication type:
- Article
12
Carrier extraction from GaSb quantum rings in GaAs solar cells using direct laser excitation.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 76, doi. 10.1049/iet-opt.2013.0062
- By:
- Publication type:
- Article
13
Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 71, doi. 10.1049/iet-opt.2013.0056
- By:
- Publication type:
- Article
14
Modelling the dynamics of a micro‐cavity switch.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 58, doi. 10.1049/iet-opt.2013.0072
- By:
- Publication type:
- Article
15
Theoretical study of line narrowing in a sub‐terahertz monolithic dual laser source with an integrated reflector.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 40, doi. 10.1049/iet-opt.2013.0070
- By:
- Publication type:
- Article
16
Numerical simulation of a mode‐locked quantum dot external cavity laser.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 44, doi. 10.1049/iet-opt.2013.0040
- By:
- Publication type:
- Article
17
Efficient terahertz devices based on III–V semiconductor photoconductors.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 33, doi. 10.1049/iet-opt.2013.0057
- By:
- Publication type:
- Article
18
Low‐strain, quantum‐cascade‐laser active regions grown on metamorphic buffer layers for emission in the 3.0–4.0 μm wavelength region.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 25, doi. 10.1049/iet-opt.2013.0060
- By:
- Publication type:
- Article
19
Electrically pumped continuous‐wave 1.3‐µm InAs/GaAs quantum dot lasers monolithically grown on Si substrates.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 20, doi. 10.1049/iet-opt.2013.0093
- By:
- Publication type:
- Article
20
Editorial: Semiconductor lasers and integrated optoelectronics.
- Published in:
- 2014
- By:
- Publication type:
- Editorial