Works matching IS 17518768 AND DT 2013 AND VI 7 AND IP 1
Results: 5
Design of silicon‐based two‐dimensional photonic integrated circuits: XOR gate.
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- IET Optoelectronics (Wiley-Blackwell), 2013, v. 7, n. 1, p. 25, doi. 10.1049/iet-opt.2012.0016
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- Article
Segmented superluminescent diode with linear power–current characteristics and adjustable radiation pattern.
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- IET Optoelectronics (Wiley-Blackwell), 2013, v. 7, n. 1, p. 20, doi. 10.1049/iet-opt.2012.0061
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- Article
Performance enhancement of asymmetric filtered 40 Gb/s carrier suppressed return to zero‐differential phase shift keying receiver in a 50 GHz grid.
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- IET Optoelectronics (Wiley-Blackwell), 2013, v. 7, n. 1, p. 14, doi. 10.1049/iet-opt.2012.0018
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- Article
Tamm states of one‐dimensional metal‐dielectric photonic crystal.
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- IET Optoelectronics (Wiley-Blackwell), 2013, v. 7, n. 1, p. 9, doi. 10.1049/iet-opt.2012.0064
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- Article
Modelling of free space optical link for ground‐to‐train communications using a Gaussian source.
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- IET Optoelectronics (Wiley-Blackwell), 2013, v. 7, n. 1, p. 1, doi. 10.1049/iet-opt.2012.0047
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- Article