Works matching IS 1616301X AND DT 2024 AND VI 34 AND IP 15

Results: 25

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes (Adv. Funct. Mater. 15/2024).

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202470085

By:

Völkel, Lukas;
Braun, Dennis;
Belete, Melkamu;
Kataria, Satender;
Wahlbrink, Thorsten;
Ran, Ke;
Kistermann, Kevin;
Mayer, Joachim;
Menzel, Stephan;
Daus, Alwin;
Lemme, Max C.

Publication type:

Article

Masthead: (Adv. Funct. Mater. 15/2024).

Published in:: Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202470084
Publication type:: Article

Neural Architecture Search with In‐Memory Multiply–Accumulate and In‐Memory Rank Based on Coating Layer Optimized C‐Doped Ge2Sb2Te5 Phase Change Memory (Adv. Funct. Mater. 15/2024).

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202300458

By:

Yan, Longhao;
Wu, Qingyu;
Li, Xi;
Xie, Chenchen;
Zhou, Xilin;
Li, Yuqi;
Shi, Daijing;
Yu, Lianfeng;
Zhang, Teng;
Tao, Yaoyu;
Yan, Bonan;
Zhong, Min;
Song, Zhitang;
Yang, Yuchao;
Huang, Ru

Publication type:

Article

Two‐Dimensional Memtransistors for Non‐Von Neumann Computing: Progress and Challenges (Adv. Funct. Mater. 15/2024).

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202470082

By:

Wali, Akshay;
Das, Saptarshi

Publication type:

Article

Materials for Memristors.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202314512

By:

Lanza, Mario;
Tian, He

Publication type:

Article

Ultralow Off‐State Current and Multilevel Resistance State in Van der Waals Heterostructure Memristors.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202309642

By:

Liu, Xinling;
Zhang, Chi;
Li, Enlong;
Gao, Caifang;
Wang, Ruixue;
Liu, Yu;
Liu, Fucai;
Shi, Wu;
Yuan, Yahua;
Sun, Jian;
Lin, Yen‐Fu;
Chu, Junhao;
Li, Wenwu

Publication type:

Article

Wafer‐Scale Memristor Array Based on Aligned Grain Boundaries of 2D Molybdenum Ditelluride for Application to Artificial Synapses.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202309455

By:

Yang, Jihoon;
Yoon, Aram;
Lee, Donghyun;
Song, Seunguk;
Jung, IL John;
Lim, Dong‐Hyeok;
Jeong, Hongsik;
Lee, Zonghoon;
Lanza, Mario;
Kwon, Soon‐Yong

Publication type:

Article

Observation of Magnon Spin Transport in BiFeO3 Thin Films.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202308944

By:

Liang, Yuhan;
Jiang, Dingsong;
Chai, Yahong;
Wang, Yue;
Chen, Hetian;
Ma, Jing;
Yu, Pu;
Yi, Di;
Nan, Tianxiang

Publication type:

Article

Two‐Dimensional Memtransistors for Non‐Von Neumann Computing: Progress and Challenges.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202308129

By:

Wali, Akshay;
Das, Saptarshi

Publication type:

Article

Brain‐Inspired Organic Electronics: Merging Neuromorphic Computing and Bioelectronics Using Conductive Polymers.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202307729

By:

Krauhausen, Imke;
Coen, Charles‐Théophile;
Spolaor, Simone;
Gkoupidenis, Paschalis;
van de Burgt, Yoeri

Publication type:

Article

Unidirectional Neuromorphic Resistive Memory Integrated with Piezoelectric Nanogenerator for Self‐Power Electronics.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202305869

By:

Khan, Muhammad Umair;
Abbas, Yawar;
Rezeq, Moh'd;
Alazzam, Anas;
Mohammad, Baker

Publication type:

Article

All‐In‐One Optoelectronic Neuristor Based on Full‐vdW Two‐Terminal Ferroelectric p–n Heterojunction.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202305822

By:

Ci, Wenjuan;
Xue, Wuhong;
Wang, Peng;
Yin, Wenhui;
Wang, Xiaoling;
Shi, Lei;
Zhou, Peng;
Xu, Xiaohong

Publication type:

Article

A Novel Physical Unclonable Function Based on Silver Nanowire Networks.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202304758

By:

Liu, Yanming;
Jian, Ming;
Liu, Xianzhu;
Peng, Songang;
Li, Hao;
Ding, Liming;
Tian, He;
Ren, Tian‐Ling

Publication type:

Article

Multilevel Encoding Physically Unclonable Functions Based on The Multispecies Structure in Diamonds.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202304648

By:

Guo, Hao;
Qin, Yue;
Wang, Zhibin;
Ma, Yuxing;
Wen, Huanfei;
Li, Zhonghao;
Ma, Zongmin;
Li, Xin;
Tang, Jun;
Liu, Jun

Publication type:

Article

Highly Nonlinear Memory Selectors with Ultrathin MoS2/WSe2/MoS2 Heterojunction.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202304242

By:

Chen, Hongye;
Wan, Tianqing;
Zhou, Yue;
Yan, Jianmin;
Chen, Changsheng;
Xu, Zhihang;
Zhang, Songge;
Zhu, Ye;
Yu, Hongyu;
Chai, Yang

Publication type:

Article

Parallel Photoelectron Storage and Visual Preprocessing Based on Nanowire Defect Engineering for Image Degradation.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202304119

By:

Li, Zhexin;
Zheng, Yiqiang;
Li, Linlin;
Liu, Lingchen;
Lou, Zheng;
Wang, Lili

Publication type:

Article

Acceptor Functionalization via Green Chemistry Enables High‐Performance n‐Type Organic Electrochemical Transistors for Biosensing, Memory Applications.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202304103

By:

Wang, Yazhou;
Koklu, Anil;
Zhong, Yizhou;
Chang, Tianrui;
Guo, Keying;
Zhao, Chao;
Castillo, Tania Cecilia Hidalgo;
Bu, Zhonggao;
Xiao, Chengyi;
Yue, Wan;
Ma, Wei;
Inal, Sahika

Publication type:

Article

Polarization‐Sensitive Optoelectronic Synapse Based on 3D Graphene/MoS2 Heterostructure.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202302288

By:

Li, Yuning;
Zhang, Yang;
Wang, Yuqiang;
Sun, Jingye;
You, Qing;
Zhu, Mingqiang;
Li, Linan;
Deng, Tao

Publication type:

Article

Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS2 Memristors.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202214250

By:

Huang, Yifu;
Gu, Yuqian;
Mohan, Sivasakthya;
Dolocan, Andrei;
Ignacio, Nicholas D.;
Kutagulla, Shanmukh;
Matthews, Kevin;
Londoño‐Calderon, Alejandra;
Chang, Yao‐Feng;
Chen, Ying‐Chen;
Warner, Jamie H.;
Pettes, Michael T.;
Lee, Jack C.;
Akinwande, Deji

Publication type:

Article

Neural Architecture Search with In‐Memory Multiply–Accumulate and In‐Memory Rank Based on Coating Layer Optimized C‐Doped Ge2Sb2Te5 Phase Change Memory.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202300458

By:

Yan, Longhao;
Wu, Qingyu;
Li, Xi;
Xie, Chenchen;
Zhou, Xilin;
Li, Yuqi;
Shi, Daijing;
Yu, Lianfeng;
Zhang, Teng;
Tao, Yaoyu;
Yan, Bonan;
Zhong, Min;
Song, Zhitang;
Yang, Yuchao;
Huang, Ru

Publication type:

Article

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202300428

By:

Völkel, Lukas;
Braun, Dennis;
Belete, Melkamu;
Kataria, Satender;
Wahlbrink, Thorsten;
Ran, Ke;
Kistermann, Kevin;
Mayer, Joachim;
Menzel, Stephan;
Daus, Alwin;
Lemme, Max C.

Publication type:

Article

Self‐Assembly of Janus Graphene Oxide via Chemical Breakdown for Scalable High‐Performance Memristors.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202302073

By:

Hui, Fei;
Zhang, Conghui;
Yu, Huanhuan;
Han, Tingting;
Weber, Jonas;
Shen, Yaqing;
Xiao, Yiping;
Li, Xiaohong;
Zhang, Zhijun;
Liu, Peisong

Publication type:

Article

Oxygen Incorporated MoS2 for Rectification‐Mediated Resistive Switching and Artificial Neural Network.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202213348

By:

Xiong, Xuya;
Wu, Fan;
Ouyang, Yi;
Liu, Yanming;
Wang, Zegao;
Tian, He;
Dong, Mingdong

Publication type:

Article

Stopping Voltage‐Dependent PCM and RRAM‐Based Neuromorphic Characteristics of Germanium Telluride.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202214615

By:

Abbas, Yawar;
Ansari, Sumayya M.;
Taha, Inas;
Abunahla, Heba;
Khan, Muhammad Umair;
Rezeq, Moh'd;
Aldosari, Haila M.;
Mohammad, Baker

Publication type:

Article

High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202213816

By:

Pazos, Sebastian;
Becker, Thales;
Villena, Marco Antonio;
Zheng, Wenwen;
Shen, Yaqing;
Yuan, Yue;
Alharbi, Osamah;
Zhu, Kaichen;
Roldán, Juan Bautista;
Wirth, Gilson;
Palumbo, Felix;
Lanza, Mario

Publication type:

Article

Works matching IS 1616301X AND DT 2024 AND VI 34 AND IP 15

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes (Adv. Funct. Mater. 15/2024).

Masthead: (Adv. Funct. Mater. 15/2024).

Neural Architecture Search with In‐Memory Multiply–Accumulate and In‐Memory Rank Based on Coating Layer Optimized C‐Doped Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Phase Change Memory (Adv. Funct. Mater. 15/2024).

Two‐Dimensional Memtransistors for Non‐Von Neumann Computing: Progress and Challenges (Adv. Funct. Mater. 15/2024).

Materials for Memristors.

Ultralow Off‐State Current and Multilevel Resistance State in Van der Waals Heterostructure Memristors.

Wafer‐Scale Memristor Array Based on Aligned Grain Boundaries of 2D Molybdenum Ditelluride for Application to Artificial Synapses.

Observation of Magnon Spin Transport in BiFeO<sub>3</sub> Thin Films.

Two‐Dimensional Memtransistors for Non‐Von Neumann Computing: Progress and Challenges.

Brain‐Inspired Organic Electronics: Merging Neuromorphic Computing and Bioelectronics Using Conductive Polymers.

Unidirectional Neuromorphic Resistive Memory Integrated with Piezoelectric Nanogenerator for Self‐Power Electronics.

All‐In‐One Optoelectronic Neuristor Based on Full‐vdW Two‐Terminal Ferroelectric p–n Heterojunction.

A Novel Physical Unclonable Function Based on Silver Nanowire Networks.

Multilevel Encoding Physically Unclonable Functions Based on The Multispecies Structure in Diamonds.

Highly Nonlinear Memory Selectors with Ultrathin MoS<sub>2</sub>/WSe<sub>2</sub>/MoS<sub>2</sub> Heterojunction.

Parallel Photoelectron Storage and Visual Preprocessing Based on Nanowire Defect Engineering for Image Degradation.

Acceptor Functionalization via Green Chemistry Enables High‐Performance n‐Type Organic Electrochemical Transistors for Biosensing, Memory Applications.

Polarization‐Sensitive Optoelectronic Synapse Based on 3D Graphene/MoS<sub>2</sub> Heterostructure.

Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS<sub>2</sub> Memristors.

Neural Architecture Search with In‐Memory Multiply–Accumulate and In‐Memory Rank Based on Coating Layer Optimized C‐Doped Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Phase Change Memory.

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes.

Self‐Assembly of Janus Graphene Oxide via Chemical Breakdown for Scalable High‐Performance Memristors.

Oxygen Incorporated MoS<sub>2</sub> for Rectification‐Mediated Resistive Switching and Artificial Neural Network.

Stopping Voltage‐Dependent PCM and RRAM‐Based Neuromorphic Characteristics of Germanium Telluride.

High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors.