Works matching IS 1616301X AND DT 2024 AND VI 34 AND IP 15

Results: 25

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes (Adv. Funct. Mater. 15/2024).
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202470085
By:
- Völkel, Lukas;
- Braun, Dennis;
- Belete, Melkamu;
- Kataria, Satender;
- Wahlbrink, Thorsten;
- Ran, Ke;
- Kistermann, Kevin;
- Mayer, Joachim;
- Menzel, Stephan;
- Daus, Alwin;
- Lemme, Max C.
Publication type:
Article
Masthead: (Adv. Funct. Mater. 15/2024).
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202470084
Publication type:
Article
Neural Architecture Search with In‐Memory Multiply–Accumulate and In‐Memory Rank Based on Coating Layer Optimized C‐Doped Ge2Sb2Te5 Phase Change Memory (Adv. Funct. Mater. 15/2024).
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202300458
By:
- Yan, Longhao;
- Wu, Qingyu;
- Li, Xi;
- Xie, Chenchen;
- Zhou, Xilin;
- Li, Yuqi;
- Shi, Daijing;
- Yu, Lianfeng;
- Zhang, Teng;
- Tao, Yaoyu;
- Yan, Bonan;
- Zhong, Min;
- Song, Zhitang;
- Yang, Yuchao;
- Huang, Ru
Publication type:
Article
Two‐Dimensional Memtransistors for Non‐Von Neumann Computing: Progress and Challenges (Adv. Funct. Mater. 15/2024).
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202470082
By:
- Wali, Akshay;
- Das, Saptarshi
Publication type:
Article
Materials for Memristors.
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202314512
By:
- Lanza, Mario;
- Tian, He
Publication type:
Article
Ultralow Off‐State Current and Multilevel Resistance State in Van der Waals Heterostructure Memristors.
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202309642
By:
- Liu, Xinling;
- Zhang, Chi;
- Li, Enlong;
- Gao, Caifang;
- Wang, Ruixue;
- Liu, Yu;
- Liu, Fucai;
- Shi, Wu;
- Yuan, Yahua;
- Sun, Jian;
- Lin, Yen‐Fu;
- Chu, Junhao;
- Li, Wenwu
Publication type:
Article
Wafer‐Scale Memristor Array Based on Aligned Grain Boundaries of 2D Molybdenum Ditelluride for Application to Artificial Synapses.
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202309455
By:
- Yang, Jihoon;
- Yoon, Aram;
- Lee, Donghyun;
- Song, Seunguk;
- Jung, IL John;
- Lim, Dong‐Hyeok;
- Jeong, Hongsik;
- Lee, Zonghoon;
- Lanza, Mario;
- Kwon, Soon‐Yong
Publication type:
Article
Observation of Magnon Spin Transport in BiFeO3 Thin Films.
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202308944
By:
- Liang, Yuhan;
- Jiang, Dingsong;
- Chai, Yahong;
- Wang, Yue;
- Chen, Hetian;
- Ma, Jing;
- Yu, Pu;
- Yi, Di;
- Nan, Tianxiang
Publication type:
Article
Two‐Dimensional Memtransistors for Non‐Von Neumann Computing: Progress and Challenges.
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202308129
By:
- Wali, Akshay;
- Das, Saptarshi
Publication type:
Article
Brain‐Inspired Organic Electronics: Merging Neuromorphic Computing and Bioelectronics Using Conductive Polymers.
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202307729
By:
- Krauhausen, Imke;
- Coen, Charles‐Théophile;
- Spolaor, Simone;
- Gkoupidenis, Paschalis;
- van de Burgt, Yoeri
Publication type:
Article
Unidirectional Neuromorphic Resistive Memory Integrated with Piezoelectric Nanogenerator for Self‐Power Electronics.
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202305869
By:
- Khan, Muhammad Umair;
- Abbas, Yawar;
- Rezeq, Moh'd;
- Alazzam, Anas;
- Mohammad, Baker
Publication type:
Article
All‐In‐One Optoelectronic Neuristor Based on Full‐vdW Two‐Terminal Ferroelectric p–n Heterojunction.
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202305822
By:
- Ci, Wenjuan;
- Xue, Wuhong;
- Wang, Peng;
- Yin, Wenhui;
- Wang, Xiaoling;
- Shi, Lei;
- Zhou, Peng;
- Xu, Xiaohong
Publication type:
Article
A Novel Physical Unclonable Function Based on Silver Nanowire Networks.
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202304758
By:
- Liu, Yanming;
- Jian, Ming;
- Liu, Xianzhu;
- Peng, Songang;
- Li, Hao;
- Ding, Liming;
- Tian, He;
- Ren, Tian‐Ling
Publication type:
Article
Multilevel Encoding Physically Unclonable Functions Based on The Multispecies Structure in Diamonds.
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202304648
By:
- Guo, Hao;
- Qin, Yue;
- Wang, Zhibin;
- Ma, Yuxing;
- Wen, Huanfei;
- Li, Zhonghao;
- Ma, Zongmin;
- Li, Xin;
- Tang, Jun;
- Liu, Jun
Publication type:
Article
Highly Nonlinear Memory Selectors with Ultrathin MoS2/WSe2/MoS2 Heterojunction.
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202304242
By:
- Chen, Hongye;
- Wan, Tianqing;
- Zhou, Yue;
- Yan, Jianmin;
- Chen, Changsheng;
- Xu, Zhihang;
- Zhang, Songge;
- Zhu, Ye;
- Yu, Hongyu;
- Chai, Yang
Publication type:
Article
Parallel Photoelectron Storage and Visual Preprocessing Based on Nanowire Defect Engineering for Image Degradation.
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202304119
By:
- Li, Zhexin;
- Zheng, Yiqiang;
- Li, Linlin;
- Liu, Lingchen;
- Lou, Zheng;
- Wang, Lili
Publication type:
Article
Acceptor Functionalization via Green Chemistry Enables High‐Performance n‐Type Organic Electrochemical Transistors for Biosensing, Memory Applications.
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202304103
By:
- Wang, Yazhou;
- Koklu, Anil;
- Zhong, Yizhou;
- Chang, Tianrui;
- Guo, Keying;
- Zhao, Chao;
- Castillo, Tania Cecilia Hidalgo;
- Bu, Zhonggao;
- Xiao, Chengyi;
- Yue, Wan;
- Ma, Wei;
- Inal, Sahika
Publication type:
Article
Polarization‐Sensitive Optoelectronic Synapse Based on 3D Graphene/MoS2 Heterostructure.
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202302288
By:
- Li, Yuning;
- Zhang, Yang;
- Wang, Yuqiang;
- Sun, Jingye;
- You, Qing;
- Zhu, Mingqiang;
- Li, Linan;
- Deng, Tao
Publication type:
Article
Self‐Assembly of Janus Graphene Oxide via Chemical Breakdown for Scalable High‐Performance Memristors.
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202302073
By:
- Hui, Fei;
- Zhang, Conghui;
- Yu, Huanhuan;
- Han, Tingting;
- Weber, Jonas;
- Shen, Yaqing;
- Xiao, Yiping;
- Li, Xiaohong;
- Zhang, Zhijun;
- Liu, Peisong
Publication type:
Article
Neural Architecture Search with In‐Memory Multiply–Accumulate and In‐Memory Rank Based on Coating Layer Optimized C‐Doped Ge2Sb2Te5 Phase Change Memory.
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202300458
By:
- Yan, Longhao;
- Wu, Qingyu;
- Li, Xi;
- Xie, Chenchen;
- Zhou, Xilin;
- Li, Yuqi;
- Shi, Daijing;
- Yu, Lianfeng;
- Zhang, Teng;
- Tao, Yaoyu;
- Yan, Bonan;
- Zhong, Min;
- Song, Zhitang;
- Yang, Yuchao;
- Huang, Ru
Publication type:
Article
Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes.
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202300428
By:
- Völkel, Lukas;
- Braun, Dennis;
- Belete, Melkamu;
- Kataria, Satender;
- Wahlbrink, Thorsten;
- Ran, Ke;
- Kistermann, Kevin;
- Mayer, Joachim;
- Menzel, Stephan;
- Daus, Alwin;
- Lemme, Max C.
Publication type:
Article
Stopping Voltage‐Dependent PCM and RRAM‐Based Neuromorphic Characteristics of Germanium Telluride.
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202214615
By:
- Abbas, Yawar;
- Ansari, Sumayya M.;
- Taha, Inas;
- Abunahla, Heba;
- Khan, Muhammad Umair;
- Rezeq, Moh'd;
- Aldosari, Haila M.;
- Mohammad, Baker
Publication type:
Article
Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS2 Memristors.
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202214250
By:
- Huang, Yifu;
- Gu, Yuqian;
- Mohan, Sivasakthya;
- Dolocan, Andrei;
- Ignacio, Nicholas D.;
- Kutagulla, Shanmukh;
- Matthews, Kevin;
- Londoño‐Calderon, Alejandra;
- Chang, Yao‐Feng;
- Chen, Ying‐Chen;
- Warner, Jamie H.;
- Pettes, Michael T.;
- Lee, Jack C.;
- Akinwande, Deji
Publication type:
Article
High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors.
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202213816
By:
- Pazos, Sebastian;
- Becker, Thales;
- Villena, Marco Antonio;
- Zheng, Wenwen;
- Shen, Yaqing;
- Yuan, Yue;
- Alharbi, Osamah;
- Zhu, Kaichen;
- Roldán, Juan Bautista;
- Wirth, Gilson;
- Palumbo, Felix;
- Lanza, Mario
Publication type:
Article
Oxygen Incorporated MoS2 for Rectification‐Mediated Resistive Switching and Artificial Neural Network.
Published in:
Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202213348
By:
- Xiong, Xuya;
- Wu, Fan;
- Ouyang, Yi;
- Liu, Yanming;
- Wang, Zegao;
- Tian, He;
- Dong, Mingdong
Publication type:
Article

Works matching IS 1616301X AND DT 2024 AND VI 34 AND IP 15

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes (Adv. Funct. Mater. 15/2024).

Masthead: (Adv. Funct. Mater. 15/2024).

Neural Architecture Search with In‐Memory Multiply–Accumulate and In‐Memory Rank Based on Coating Layer Optimized C‐Doped Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Phase Change Memory (Adv. Funct. Mater. 15/2024).

Two‐Dimensional Memtransistors for Non‐Von Neumann Computing: Progress and Challenges (Adv. Funct. Mater. 15/2024).

Materials for Memristors.

Ultralow Off‐State Current and Multilevel Resistance State in Van der Waals Heterostructure Memristors.

Wafer‐Scale Memristor Array Based on Aligned Grain Boundaries of 2D Molybdenum Ditelluride for Application to Artificial Synapses.

Observation of Magnon Spin Transport in BiFeO<sub>3</sub> Thin Films.

Two‐Dimensional Memtransistors for Non‐Von Neumann Computing: Progress and Challenges.

Brain‐Inspired Organic Electronics: Merging Neuromorphic Computing and Bioelectronics Using Conductive Polymers.

Unidirectional Neuromorphic Resistive Memory Integrated with Piezoelectric Nanogenerator for Self‐Power Electronics.

All‐In‐One Optoelectronic Neuristor Based on Full‐vdW Two‐Terminal Ferroelectric p–n Heterojunction.

A Novel Physical Unclonable Function Based on Silver Nanowire Networks.

Multilevel Encoding Physically Unclonable Functions Based on The Multispecies Structure in Diamonds.

Highly Nonlinear Memory Selectors with Ultrathin MoS<sub>2</sub>/WSe<sub>2</sub>/MoS<sub>2</sub> Heterojunction.

Parallel Photoelectron Storage and Visual Preprocessing Based on Nanowire Defect Engineering for Image Degradation.

Acceptor Functionalization via Green Chemistry Enables High‐Performance n‐Type Organic Electrochemical Transistors for Biosensing, Memory Applications.

Polarization‐Sensitive Optoelectronic Synapse Based on 3D Graphene/MoS<sub>2</sub> Heterostructure.

Self‐Assembly of Janus Graphene Oxide via Chemical Breakdown for Scalable High‐Performance Memristors.

Neural Architecture Search with In‐Memory Multiply–Accumulate and In‐Memory Rank Based on Coating Layer Optimized C‐Doped Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Phase Change Memory.

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes.

Stopping Voltage‐Dependent PCM and RRAM‐Based Neuromorphic Characteristics of Germanium Telluride.

Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS<sub>2</sub> Memristors.

High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors.

Oxygen Incorporated MoS<sub>2</sub> for Rectification‐Mediated Resistive Switching and Artificial Neural Network.