Works matching IS 1616301X AND DT 2017 AND VI 27 AND IP 13

Results: 23
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    Monolayer W <sub>x</sub>Mo<sub>1−</sub><sub>x</sub>S<sub>2</sub> Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors.

    Published in:
    Advanced Functional Materials, 2017, v. 27, n. 13, p. n/a, doi. 10.1002/adfm.201606469
    By:
    • Liu, Xinke;
    • Wu, Jing;
    • Yu, Wenjie;
    • Chen, Le;
    • Huang, Zhonghui;
    • Jiang, He;
    • He, Jiazhu;
    • Liu, Qiang;
    • Lu, Youming;
    • Zhu, Deliang;
    • Liu, Wenjun;
    • Cao, Peijiang;
    • Han, Shun;
    • Xiong, Xinbo;
    • Xu, Wangying;
    • Ao, Jin‐Ping;
    • Ang, Kah‐Wee;
    • He, Zhubing
    Publication type:
    Article
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    High Current Density Electrical Breakdown of TiS<sub>3</sub> Nanoribbon-Based Field-Effect Transistors.

    Published in:
    Advanced Functional Materials, 2017, v. 27, n. 13, p. n/a, doi. 10.1002/adfm.201605647
    By:
    • Molina‐Mendoza, Aday J.;
    • Island, Joshua O.;
    • Paz, Wendel S.;
    • Clamagirand, Jose Manuel;
    • Ares, Jose Ramón;
    • Flores, Eduardo;
    • Leardini, Fabrice;
    • Sánchez, Carlos;
    • Agraït, Nicolás;
    • Rubio‐Bollinger, Gabino;
    • van der Zant, Herre S. J.;
    • Ferrer, Isabel J.;
    • Palacios, J. J.;
    • Castellanos‐Gomez, Andres
    Publication type:
    Article
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