Works matching IS 16136810 AND DT 2020 AND VI 16 AND IP 42


Results: 29
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    In Situ Oxygen Doping of Monolayer MoS<sub>2</sub> for Novel Electronics.

    Published in:
    Small, 2020, v. 16, n. 42, p. 1, doi. 10.1002/smll.202004276
    By:
    • Tang, Jian;
    • Wei, Zheng;
    • Wang, Qinqin;
    • Wang, Yu;
    • Han, Bo;
    • Li, Xiaomei;
    • Huang, Biying;
    • Liao, Mengzhou;
    • Liu, Jieying;
    • Li, Na;
    • Zhao, Yanchong;
    • Shen, Cheng;
    • Guo, Yutuo;
    • Bai, Xuedong;
    • Gao, Peng;
    • Yang, Wei;
    • Chen, Lan;
    • Wu, Kehui;
    • Yang, Rong;
    • Shi, Dongxia
    Publication type:
    Article
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    Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices.

    Published in:
    Small, 2020, v. 16, n. 42, p. 1, doi. 10.1002/smll.202003964
    By:
    • Lin, Chih‐Yang;
    • Chen, Jia;
    • Chen, Po‐Hsun;
    • Chang, Ting‐Chang;
    • Wu, Yuting;
    • Eshraghian, Jason K.;
    • Moon, John;
    • Yoo, Sangmin;
    • Wang, Yu‐Hsun;
    • Chen, Wen‐Chung;
    • Wang, Zhi‐Yang;
    • Huang, Hui‐Chun;
    • Li, Yi;
    • Miao, Xiangshui;
    • Lu, Wei D.;
    • Sze, Simon M.
    Publication type:
    Article
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