Works matching IS 15608034 AND DT 2023 AND VI 26 AND IP 3
Results: 10
Comment on “Short-time dynamics of noise-induced escapes and transitions in overdamped systems” by Soskin et al., Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022. 25, No 3. P. 262–274.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 3, p. 352, doi. 10.15407/spqeo26.03.352
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SPR chromatic sensor with colorimetric registration for detection of gas molecules.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 3, p. 343, doi. 10.15407/spqeo26.03.343
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Detection of the explosive nitroaromatic compound simulants with chemosensory systems based on quartz crystal microbalance and chemiresistive sensor arrays.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 3, p. 332, doi. 10.15407/spqeo26.03.332
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Influence of perovskite thickness on the performance of silver-doped NaZnBr<sub>3</sub> perovskite solar cells using SCAPS software.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 3, p. 321, doi. 10.15407/spqeo26.03.321
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Transient response analysis of a resonant cavity enhanced light emitting diode.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 3, p. 315, doi. 10.15407/spqeo26.03.315
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Determination of scattering and Urbach absorption contributions to the light extinction in PTFE films by using graphical representation technique and numerical solution of the inverse problem.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 3, p. 303, doi. 10.15407/spqeo26.03.303
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Luminescent properties of the structures with embedded silicon nanoclusters: Influence of technology, doping and annealing (Review).
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 3, p. 278, doi. 10.15407/spqeo26.03.278
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Relationship between oxidation, stresses, morphology, local resistivity, and optical properties of TiO<sub>2</sub>, Gd<sub>2</sub>O<sub>3</sub>, Er<sub>2</sub>O<sub>3</sub>, SiO<sub>2</sub> thin films on SiC.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 3, p. 260, doi. 10.15407/spqeo26.03.260
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Role of ZnMn<sub>2</sub>O<sub>4</sub> phase in formation of varistor characteristics in ZnO:Mn ceramics.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 3, p. 255, doi. 10.15407/spqeo26.03.255
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Preparation and ionic conductivity of Ag<sub>8</sub>GeS<sub>6</sub>-based ceramic materials.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 3, p. 270, doi. 10.15407/spqeo26.03.270
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