Works matching IS 1560-8034 AND VI 9 AND IP 1 AND DT 2006
Results: 17
Microwave irradiation of gallium arsenide.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 97, doi. 10.15407/spqeo9.01.097
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- Article
Electric field and carrier concentration distributions in the semiconductor under photorefractive Gunn effect.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 93, doi. 10.15407/spqeo9.01.093
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Noise induced re-entrant transitions in exciton bistable system.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 88, doi. 10.15407/spqeo9.01.088
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- Article
Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 84, doi. 10.15407/spqeo9.01.084
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- Article
Dynamic electrophysical characterization of porous silicon humidity sensing.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 79, doi. 10.15407/spqeo9.01.079
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- Article
Absorption and photoluminescent spectra of dimethylaniline ethylene ketone dyes in isotropic solvents.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 73
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- Article
Simulation of radiation characteristics of pulse X-ray devices for non-destructive testing the semiconductor materials.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 68, doi. 10.15407/spqeo9.01.068
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New fast-relaxed liquid crystal materials for optical communication networks.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 63, doi. 10.15407/spqeo9.01.063
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- Article
Determination of parameters of cadmium telluride films on silicon by the methods of main angle and multiangular ellipsometry.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 55, doi. 10.15407/spqeo9.01.055
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An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 43, doi. 10.15407/spqeo9.01.043
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Investigation of the effective mass of electrons in solid solutions Hg<sub>1-x-y-z</sub>A<sub>x</sub>B<sub>y</sub>C<sub>z</sub>Te.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 29, doi. 10.15407/spqeo9.01.029
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Solid state doping of Cd<sub>x</sub>Hg<sub>1-x</sub>Te epitaxial layers with elements of V group.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 36, doi. 10.15407/spqeo9.01.036
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Diamond microcrystallites formation through the phase transition graphite→liquid→diamond.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 22, doi. 10.15407/spqeo9.01.022
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- Article
Photoresponse in Ge/Si nanostructures with quantum dots.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 32, doi. 10.15407/spqeo9.01.032
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Modelling of pyroelectric response in inhomogeneous ferroelectric-semiconductor films.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 14, doi. 10.15407/spqeo9.01.014
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- Article
Effect of chemical and radiofrequency plasma treatment on photoluminescence of SiO<sub>x</sub> films.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 9, doi. 10.15407/spqeo9.01.009
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- Article
Excitons and trions in spherical semiconductor quantum dots.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 1, doi. 10.15407/spqeo9.01.001
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- Article