Works in Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, Vol 8, Issue 1
Results: 20
Review of the monograph.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 114
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Cd<sub>1-x</sub>Zn<sub>x</sub>Te high-resistive single crystals growth from a vapor phase.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 110, doi. 10.15407/spqeo8.01.110
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Filter for TV and video cameras.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 106, doi. 10.15407/spqeo8.01.106
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Quadric hologram-based self-conjugation of vortex beams.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 100, doi. 10.15407/spqeo8.01.100
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Novel SnO<sub>2</sub> based optical sensor for detection of low ammonia concentrations in water at room temperatures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 95, doi. 10.15407/spqeo8.01.095
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Modification of electroluminescence and charge trapping in germanium implanted metal-oxide silicon light-emitting diodes with plasma treatment.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 90, doi. 10.15407/spqeo8.01.090
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Synthesis of highly doped Nd:YAG powder by SOL-GEL method.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 87, doi. 10.15407/spqeo8.01.087
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Silicon photodiode & preamplifier characteristic properties under background radiation conditions.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 83, doi. 10.15407/spqeo8.01.083
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Photoconverters with microrelief p-n junction on a basis of p-Al<sub>x</sub>Ga<sub>1-x</sub>As -- p-GaAs -- n-GaAs -- n+-GaAs heterojunction.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 79, doi. 10.15407/spqeo8.01.079
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Experimental study and theoretical analysis of photoelectric characteristics of Al<sub>x</sub>Ga<sub>1-x</sub>As--p-GaAs--n -GaAs -based photoconverters with relief interfaces.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 72, doi. 10.15407/spqeo8.01.072
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Theory of two-dimensional photonic crystals with lamellar cylindrical pores.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 64, doi. 10.15407/spqeo8.01.064
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The nature of red emission in porous silicon.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 60, doi. 10.15407/spqeo8.01.060
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Effect of internal electrical field on compositional dependence of p-n junction depth in ion milled p-Cd<sub>x</sub>Hg<sub>1-x</sub>Te.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 53, doi. 10.15407/spqeo8.01.053
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Investigation of the effect of external factors (heating, exposition to radiation) on the electrophysical parameters of barrier heterostructures p-AlGaAs--p-GaAs-n-GaAs.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 46, doi. 10.15407/spqeo8.01.046
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Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 36
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Investigation of the physical properties of multicomponent solid solutions Hg<sub>1-x-y-z</sub>A<sub>x</sub>B<sub>y</sub>C<sub>z</sub>Te.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 30, doi. 10.15407/spqeo8.01.030
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Application of the method of projective representations to the analysis of exciton-phonon transitions in enantiomorphous tetragonal crystals ZnP<sub>2</sub> and CdP<sub>2</sub>.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 19, doi. 10.15407/spqeo8.01.019
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The local atomic structures in Si<sub>1-x</sub>Ge<sub>x</sub> and Si<sub>1-x</sub>Sn<sub>x</sub> random solid solutions.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 1, doi. 10.15407/spqeo8.01.001
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Momentum relaxation of hot electrons during radiative intraband indirect transitions in ZnS:Cr.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 25
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Spin ballistic transport and quantum interference in mesoscopic loop structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 6, doi. 10.15407/spqeo8.01.006
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