Works in Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, Vol 23, Issue 3
Results: 14
Study of structural, electrical and optical properties of MoRe<sub>0.001</sub>Se<sub>1.999</sub> single crystal.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 267, doi. 10.15407/spqeo23.03.267
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Determination of temperature dependence of electron effective mass in 4H-SiC from reverse current-voltage characteristics of 4H-SiC Schottky barrier diodes.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 271, doi. 10.15407/spqeo23.03.271
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Recombination statistics of non-equilibrium carriers in the model of semiconductor with donor-acceptor pairs possessing variable recombination activity.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 290, doi. 10.15407/spqeo23.03.290
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Energy of interaction between polarons and spatial configuration of bipolaron in two-dimensional systems.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 282, doi. 10.15407/spqeo23.03.282
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Polarization holography in azobenzene polymeric films prepared using the new chemical method.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 323, doi. 10.15407/spqeo23.03.323
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Changes in impurity radiative recombination and surface morphology induced by treatment of GaP in weak magnetic field.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 302, doi. 10.15407/spqeo23.03.302
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Studying the properties of Gd<sub>2</sub>O<sub>3</sub>--WO<sub>3</sub>--CaO--SiO<sub>2</sub>--B<sub>2</sub>O<sub>3</sub> glasses doped with Tb<sup>3+</sup>.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 276, doi. 10.15407/spqeo23.03.276
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Software controlling the LED bar graph displays.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 329, doi. 10.15407/spqeo23.03.329
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- Article
Determination of crystallization conditions of Ge/GaAs heterostructures in scanning LPE method.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 294, doi. 10.15407/spqeo23.03.294
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High-coherent oscillations in IR spectra of macroporous silicon with nanocoatings.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 316, doi. 10.15407/spqeo23.03.316
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Structural and impedance studies of copper-enriched (Cu<sub>0.75</sub>Ag<sub>0.25</sub>)<sub>7</sub>SiS<sub>5</sub>I-based ceramics.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 260, doi. 10.15407/spqeo23.03.260
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Comparative characteristics of TiO<sub>2</sub>(Er<sub>2</sub>O<sub>3</sub>, Dy<sub>2</sub>O<sub>3</sub>)/por-SiC/SiC heterostructures (Review).
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 253, doi. 10.15407/spqeo23.03.253
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Width of the surface plasmon resonance line in spherical metal nanoparticles.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 308, doi. 10.15407/spqeo23.03.308
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The advancement of silicon-on-insulator (SOI) devices and their basic properties.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 3, p. 227, doi. 10.15407/spqeo23.03.227
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