Works in Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, Vol 18, Issue 1
Results: 20
Peculiarities of the exciton scattering in double semiconductor quantum wells with disordered layers.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 110
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Morphology and optical constants of nanographite films created by thermal vacuum deposition.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 106
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Thin-film solar converters based on the p-Cu<sub>1.8</sub>S/n-CdTe surface-barrier structure.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 101
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Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100).
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 97
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On the origin of radiation-induced metastability in vitreous chalcogenide semiconductors: The role of intrinsic and impurity-related destruction-polymerization transformations.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 90
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Vibrational states of hexagonal ZnO doped with Co.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 86
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Electron transport in crossed electric and magnetic fields under the condition of the electron streaming in GaN.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 79
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Analysis of conditions for synthesis of CdS:Mn nanoparticles.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 74
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Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 71
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Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si<sub>1-x</sub>C<sub>x</sub>:H films.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 63
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Spectral parameters of electron in multi-shell open semiconductor nanotube.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 57
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Changes in electrophysical properties of heavily doped n-Ge <As> single crystals under the influence of thermoannealings.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 53
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Micro-Raman study of nanocomposite porous films with silver nanoparticles prepared using pulsed laser deposition.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 46
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Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 40
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Nonlinear-optical processes at streamer discharge in semiconductors.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 36
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Au/GaAs photovoltaic structures with single-wall carbon nanotubes on the microrelief interface.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 31
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Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 26
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Zinc oxide nanoparticles fabricated in the porous silica matrix by the sublimation method.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 20
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Electronic structure of PbSnS<sub>3</sub> and PbGeS<sub>3</sub> semiconductor compounds with the mixed cation coordination.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 12
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Theory of high-field electron transport in the heterostructures Al<sub>x</sub>Ga<sub>1-x</sub>As/GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As with delta-doped barriers. Effect of real-space transfer.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 1
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