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- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 429
- Publication type:
- Article
Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 424
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- Article
Stacking Faults in the single crystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 421
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- Article
Two-dimensional modeling the static parameters for a submicron field-effect transistor.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 417
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- Article
Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 412
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- Article
Thin silicon solar cells with SiO<sub>X</sub>/SiN<sub>X</sub> Bragg mirror rear surface reflector.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 406
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- Article
Photothermal analysis of heterogeneous semiconductor structures under a pulse laser irradiation.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 403
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- Publication type:
- Article
Stimulated emission of Cr<sup>2+</sup> ions in ZnS:Cr thin-film electroluminescent structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 362
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- Article
Analysis of properties of optical carriers after long-term storage.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 399
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- Publication type:
- Article
Investigation of singularities inherent to Mueller matrix images of biological crystals: diagnostics of their birefringent structure.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 379
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- Article
Fine structure of NQR spectra in GaSe.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 370
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- Article
Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si-Fz.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 375
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- Publication type:
- Article
Wavelet analysis for Mueller matrix images of biological crystal networks.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 391, doi. 10.15407/spqeo12.04.391
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- Publication type:
- Article
Influence of polarization of semiconductor lattice on its optical vibration spectrum.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 366
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- Publication type:
- Article
Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge<sub>1-X</sub>Si<sub>X</sub> heterostructure.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 357
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- Publication type:
- Article
Electron-electron drag in crystals with a multi-valley band. Magnetoresistivity and Hall-effect.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 349
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- Article
The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 343
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- Article
Local plasmons contribution into photocurrent of Au/GaAs surface barrier structure with Au nanoparticles on interface.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 315
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- Publication type:
- Article
Comparison of electron transport in polar materials for the models of low-density and high-density electron gas. Application to bulk GaN.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 328
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- Publication type:
- Article
Synthesis and luminescent properties of SrTiO<sub>3</sub>:Pr<sup>3+</sup> phosphors prepared by sol-gel method.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 321
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- Publication type:
- Article
A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 339
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- Publication type:
- Article
On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 324
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- Article