Works in Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, Vol 11, Issue 4

Results: 16

Optical properties of diamond-like carbon films subjected to ultraviolet irradiation.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 396, doi. 10.15407/spqeo11.04.396

By:

Klyui, N. I.;
Litovchenko, V. G.;
Lukyanov, A. N.;
Klyui, A. N.

Publication type:

Article

Ordered carbon nanotubes and globular opals as a model of multiscaling photonic crystals.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 392, doi. 10.15407/spqeo11.04.392

By:

Dovbeshko, G.;
Fesenko, O.;
Moiseyenko, V.;
Gorelik, V.;
Boyko, V.;
Sobolev, V.

Publication type:

Article

Dynamics of acoustic emission in light-emitting A3B5 structures.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 385, doi. 10.15407/spqeo11.04.385

By:

Vlasenko, A. I.;
Lyashenko, O. V.;
Veleschuk, V. P.;
Kisseluk, M. P.

Publication type:

Article

Influence of H2S and H2 adsorption on characteristics of MIS structures with Si porous layers.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 381, doi. 10.15407/spqeo11.04.381

By:

Solntsev, V. S.;
Litovchenko, V. G.;
Gorbanyuk, T. I.;
Evtukh, A. A.

Publication type:

Article

Polar properties and local piezoelectric response of ferroelectric nanotubes.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 370, doi. 10.15407/spqeo11.04.370

By:

Morozovska, A. N.;
Svechnikov, G. S.;
Shishkin, E. I.;
Shur, V. Y.

Publication type:

Article

Strain effects on the valence band structure, optical transitions, and light gain spectra in zinc-blende GaN quantum wells.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 364, doi. 10.15407/spqeo11.04.364

By:

Lokot, L. O.

Publication type:

Article

Raman threshold and optical gain bandwidth in silica fibers.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 360, doi. 10.15407/spqeo11.04.360

By:

Felinskyi, G. S.;
Korotkov, P. A.

Publication type:

Article

Novel hysteresis effect in ultrathin epitaxial Gd2O3 high-k dielectric.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 324, doi. 10.15407/spqeo11.04.324

By:

Nazarov, A. N.;
Gomeniuk, Y. V.;
Gomeniuk, Y. Y.;
Lysenko, V. S.;
Gottlob, H. D. B.;
Schmidt, M.;
Lemme, M. C.;
Czernohorsky, M.;
Osten, H. J.

Publication type:

Article

Hall mobility of charge carriers in films of (PbX)1-x(Sm2x3)x semiconductors formed on porous silicon.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 356, doi. 10.15407/spqeo11.04.356

By:

Hasanov, H. A.;
Murguzov, M. I.

Publication type:

Article

Features of the super prism effect in multilayer dielectric coatings.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 345, doi. 10.15407/spqeo11.04.345

By:

Pervak, Yu. O.;
Onishchuk, V. M.;
Pervak, V. Yu.

Publication type:

Article

Effect of La3+ ions on the habit of KDP crystals.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 342, doi. 10.15407/spqeo11.04.342

By:

Javidi, S.;
Nia, M. Esmaeil;
Aliakbari, N.;
Taheri, F.

Publication type:

Article

Dielectric studies of dispersions of carbon nanotubes in liquid crystals 5CB.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 337

By:

Kovalchuk, A.;
Dolgov, L.;
Yaroshchuk, O.

Publication type:

Article

Factor of interfacial potential for the surface plasmon-polariton resonance sensor response.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 329, doi. 10.15407/spqeo11.04.329

By:

Lopatynskyi, A. M.;
Lopatynska, O. G.;
Guiver, M. D.;
Poperenko, L. V.;
Chegel, V. I.

Publication type:

Article

Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO2 matrix.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 352, doi. 10.15407/spqeo11.04.352

By:

Khatsevich, I.;
Melnik, V.;
Popov, V.;
Romanyuk, B.;
Fedulov, V.

Publication type:

Article

Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 98, doi. 10.15407/spqeo11.04.319

By:

Nazarov, A. N.;
Osiyuk, I. N.;
Tiagulskyi, S. I.;
Lysenko, V. S.;
Tyagulskyy, I. P.;
Torbin, V. N.;
Omelchuk, V. V.;
Nazarova, T. M.;
Rebohle, L.;
Skorupa, W.

Publication type:

Article

Microwave induced structural-impurity ordering of transition region in Ta2O5 stacks on Si.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 311, doi. 10.15407/spqeo11.04.311

By:

Kolyadina, E. Yu.;
Konakova, R. V.;
Matveeva, L. A.;
Mitin, V. F.;
Shynkarenko, V. V.;
Atanassova, E.

Publication type:

Article

Works in Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, Vol 11, Issue 4

Optical properties of diamond-like carbon films subjected to ultraviolet irradiation.

Ordered carbon nanotubes and globular opals as a model of multiscaling photonic crystals.

Dynamics of acoustic emission in light-emitting A<sub>3</sub>B<sub>5</sub> structures.

Influence of H<sub>2</sub>S and H<sub>2</sub> adsorption on characteristics of MIS structures with Si porous layers.

Polar properties and local piezoelectric response of ferroelectric nanotubes.

Strain effects on the valence band structure, optical transitions, and light gain spectra in zinc-blende GaN quantum wells.

Raman threshold and optical gain bandwidth in silica fibers.

Novel hysteresis effect in ultrathin epitaxial Gd<sub>2</sub>O<sub>3</sub> high-k dielectric.

Hall mobility of charge carriers in films of (PbX)<sub>1-x</sub>(Sm<sub>2</sub>x<sub>3</sub>)<sub>x</sub> semiconductors formed on porous silicon.

Features of the super prism effect in multilayer dielectric coatings.

Effect of La<sup>3+</sup> ions on the habit of KDP crystals.

Dielectric studies of dispersions of carbon nanotubes in liquid crystals 5CB.

Factor of interfacial potential for the surface plasmon-polariton resonance sensor response.

Effect of low-temperature treatments on photoluminescence enhancement of ion-beam synthesized Si nanocrystals in SiO<sub>2</sub> matrix.

Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions.

Microwave induced structural-impurity ordering of transition region in Ta<sub>2</sub>O<sub>5</sub> stacks on Si.