Works in Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, Vol 10, Issue 2

Results: 16

Organic iso-type pentacene -- lead phthalocyanine heterostructures.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 81, doi. 10.15407/spqeo10.02.081

By:

Vertsimakha, Ya. I.;
Lutsyk, P. M.

Publication type:

Article

Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 76, doi. 10.15407/spqeo10.02.076

By:

Lysiuk, V. O.;
Staschuk, V. S.;
Kluy, M. I.;
Vakulenko, O. V.;
Poperenko, L. V.

Publication type:

Article

Investigation of light polarization in CdS in the presence of two-photon absorption.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 72, doi. 10.15407/spqeo10.02.072

By:

Kulish, M. R.;
Lisitsa, M. P.;
Malysh, N. I.

Publication type:

Article

Characterization of nanoscaled films on flat and grating substrates as some elements of plasmonics.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 62, doi. 10.15407/spqeo10.02.062

By:

Dmitruk, N. L.;
Mayeva, O. I.;
Korovin, A. V.;
Mamykin, S. V.;
Sosnova, M. V.;
Yastrubchak, O. B.

Publication type:

Article

Isothermal growth kinetics of CdxHg1-xTe LPE layers.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 29, doi. 10.15407/spqeo10.02.029

By:

Moskvin, P. P.;
Khodakovsky, V. V.

Publication type:

Article

Out-of-plane optical transmittance of 2D photonic macroporous silicon structures.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 51, doi. 10.15407/spqeo10.02.051

By:

Karachevtseva, L. A.;
Glushko, A. E.;
Ivanov, V. I.;
Lytvynenko, O. O.;
Onishchenko, V. F.;
Parshin, K. A.;
Stronska, O. J.

Publication type:

Article

Charge characteristics of the MOS structures with oxide films containing Si nanocrystals.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 46, doi. 10.15407/spqeo10.02.046

By:

Begun, E. V.;
Bratus, O. L.;
Evtukh, A. A.;
Kaganovich, E. B.;
Manoilov, E. G.

Publication type:

Article

Influence of some physico-chemical factors on properties of electrodes that decompose water catalytically.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 40, doi. 10.15407/spqeo10.02.040

By:

Primachenko, V. E.;
Serba, O. A.;
Chernobai, V. A.;
Venger, E. F.

Publication type:

Article

Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic temperatures.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 34, doi. 10.15407/spqeo10.02.034

By:

Lysenko, V. S.;
Tyagulsky, I. P.;
Osiyuk, I. N.;
Nazarov, A. N.

Publication type:

Article

Frequency-dependent dielectric coefficients of TlInS2 amorphous films.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 58, doi. 10.15407/spqeo10.02.058

By:

Mustafaeva, S. N.;
Asadov, M. M.;
Qahramanov, K. Sh.

Publication type:

Article

The influence of irradiation by electrons and γ-quanta on photoelectrical and optical properties of epitaxial Pb1-xMnxTe film.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 26, doi. 10.15407/spqeo10.02.026

By:

Abbasov, Sh. M.;
Nuruyev, I. R.;
Tagiyev, T. B.;
Agaverdiyeva, G. T.;
Kerimova, T. I.;
Ismayilova, G. T.

Publication type:

Article

Boron, aluminum, nitrogen, and oxygen impurities in silicon carbide.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 21, doi. 10.15407/spqeo10.02.021

By:

Vlaskina, S. I.;
Vlaskin, V. I.;
Podlasov, S. A.;
Rodionov, V. E.;
Svechnikov, G. S.

Publication type:

Article

Flexible electroluminescent panels.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 16, doi. 10.15407/spqeo10.02.016

By:

V. I. Vlaskin;
Vlaskina, S. I.;
Koval, O. Yu.;
Rodionov, V. E.;
Svechnikov, G. S.

Publication type:

Article

Investigation of the direct/indirect exciton transition in the double quantum well system based on Cd1-yMgyTe/ Cd1-xMnxTe in applied magnetic field.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 11, doi. 10.15407/spqeo10.02.011

By:

Lev, S. B.;
Sugakov, V. I.;
Vertsimakha, G. V.

Publication type:

Article

Laser-induced incandescence in aqueous carbon black suspensions: the role of particle vaporization.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 6, doi. 10.15407/spqeo10.02.006

By:

Rulik, Ju. Ju.;
Mikhailenko, N. M.;
Zelensky, S. E.;
Kolesnik, A. S.

Publication type:

Article

Investigation of electron-phonon interaction in bulk and nanostructured semiconductors.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 1, doi. 10.15407/spqeo10.02.001

By:

Yaremko, A. M.;
Yukhymchuk, V. O.;
Dzhagan, V. M.;
Valakh, M. Ya.;
Azhniuk, Yu. M.;
Baran, J.;
Ratajczak, H.;
Drozd, M.

Publication type:

Article

Works in Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, Vol 10, Issue 2

Organic iso-type pentacene -- lead phthalocyanine heterostructures.

Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate.

Investigation of light polarization in CdS in the presence of two-photon absorption.

Characterization of nanoscaled films on flat and grating substrates as some elements of plasmonics.

Isothermal growth kinetics of Cd<sub>x</sub>Hg<sub>1-x</sub>Te LPE layers.

Out-of-plane optical transmittance of 2D photonic macroporous silicon structures.

Charge characteristics of the MOS structures with oxide films containing Si nanocrystals.

Influence of some physico-chemical factors on properties of electrodes that decompose water catalytically.

Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic temperatures.

Frequency-dependent dielectric coefficients of TlInS<sub>2</sub> amorphous films.

The influence of irradiation by electrons and γ-quanta on photoelectrical and optical properties of epitaxial Pb<sub>1-x</sub>Mn<sub>x</sub>Te film.

Boron, aluminum, nitrogen, and oxygen impurities in silicon carbide.

Flexible electroluminescent panels.

Investigation of the direct/indirect exciton transition in the double quantum well system based on Cd<sub>1-y</sub>Mg<sub>y</sub>Te/ Cd<sub>1-x</sub>Mn<sub>x</sub>Te in applied magnetic field.

Laser-induced incandescence in aqueous carbon black suspensions: the role of particle vaporization.

Investigation of electron-phonon interaction in bulk and nanostructured semiconductors.