Works matching IS 1535864X AND DT 2008 AND VI 12 AND IP 2


Results: 10
    1

    45nm Transistor Reliability.

    Published in:
    Intel Technology Journal, 2008, v. 12, n. 2, p. 131
    By:
    • Hicks, Jeffrey;
    • Bergstrom, Daniel;
    • Hattendorf, Mike;
    • Jopling, Jason;
    • Maiz, Jose;
    • Sangwoo Pae;
    • Prasad, Chetan;
    • Wiedemer, Jami
    Publication type:
    Article
    2

    Flip-Chip Packaging Technology for Enabling 45nm Products.

    Published in:
    Intel Technology Journal, 2008, v. 12, n. 2, p. 145
    By:
    • Patel, Neha M.;
    • Wakharkar, Vijay;
    • Agrahram, Sairam;
    • Deshpande, Nitin;
    • Mengzhi Pang;
    • Tanikella, Ravindra;
    • Manepalli, Rahul;
    • Stover, Pat;
    • Jackson, James;
    • Mahajan, Ravi;
    • Tiwari, Prabhat
    Publication type:
    Article
    3
    4
    5
    6
    7

    45nm High-k+Metal Gate Strain-Enhanced Transistors.

    Published in:
    Intel Technology Journal, 2008, v. 12, n. 2, p. 77
    By:
    • Auth, Chris;
    • Buehler, Mark;
    • Cappellani, Annalisa;
    • Chi-Hing Choi;
    • Ding, Gary;
    • Weimin Han;
    • Joshi, Subhash;
    • McIntyre, Brian;
    • Prince, Matt;
    • Ranade, Pushkar;
    • Sandford, Justin;
    • Thomas, Christopher
    Publication type:
    Article
    8
    9

    Foreword.

    Published in:
    Intel Technology Journal, 2008, v. 12, n. 2, p. 77
    By:
    • Holt, Bill
    Publication type:
    Article
    10

    Preface.

    Published in:
    Intel Technology Journal, 2008, v. 12, n. 2, p. 77
    By:
    • Lin Chao
    Publication type:
    Article