Works matching IS 15094553 AND DT 2010 AND VI 2010 AND IP 1
Results: 12
Channel Identification Using Chaos for an Uplink/Downlink Multicarrier Code Division Multiple Access System.
- Published in:
- Journal of Telecommunications & Information Technology, 2010, v. 2010, n. 1, p. 48, doi. 10.26636/jtit.2010.1.1063
- By:
- Publication type:
- Article
Optimization of the Multi-Threaded Interval Algorithm for the Pareto-Set Computation.
- Published in:
- Journal of Telecommunications & Information Technology, 2010, v. 2010, n. 1, p. 70, doi. 10.26636/jtit.2010.1.1066
- By:
- Publication type:
- Article
Performance Comparison of Protection Strategies in WDM Mesh Networks.
- Published in:
- Journal of Telecommunications & Information Technology, 2010, v. 2010, n. 1, p. 62, doi. 10.26636/jtit.2010.1.1065
- By:
- Publication type:
- Article
Mobile Telematic Applications Based on Object Positioning.
- Published in:
- Journal of Telecommunications & Information Technology, 2010, v. 2010, n. 1, p. 55, doi. 10.26636/jtit.2010.1.1064
- By:
- Publication type:
- Article
Frequency Offset Compensation for OFDM Systems Using a Combined Autocorrelation and Wiener Filtering Scheme.
- Published in:
- Journal of Telecommunications & Information Technology, 2010, v. 2010, n. 1, p. 40, doi. 10.26636/jtit.2010.1.1062
- By:
- Publication type:
- Article
Multi-Domain Modeling and Simulations of the Heterogeneous Systems.
- Published in:
- Journal of Telecommunications & Information Technology, 2010, v. 2010, n. 1, p. 34, doi. 10.26636/jtit.2010.1.1061
- By:
- Publication type:
- Article
History of Semiconductors.
- Published in:
- Journal of Telecommunications & Information Technology, 2010, v. 2010, n. 1, p. 3, doi. 10.26636/jtit.2010.1.1015
- By:
- Publication type:
- Article
Large-Signal RF Modeling with the EKV3 MOSFET Model.
- Published in:
- Journal of Telecommunications & Information Technology, 2010, v. 2010, n. 1, p. 29, doi. 10.26636/jtit.2010.1.1060
- By:
- Publication type:
- Article
The Effect of High Temperature Annealing on Fluorine Distribution Profile and Electro-Physical Properties of Thin Gate Oxide Fluorinated by Silicon Dioxide RIE in CF<sub>4</sub> Plasma.
- Published in:
- Journal of Telecommunications & Information Technology, 2010, v. 2010, n. 1, p. 25, doi. 10.26636/jtit.2010.1.1059
- By:
- Publication type:
- Article
Novel Method of Improving Electrical Properties of Thin PECVD Oxide Films by Fluorination of Silicon Surface Region by RIE in RF CF<sub>4</sub> Plasma.
- Published in:
- Journal of Telecommunications & Information Technology, 2010, v. 2010, n. 1, p. 20, doi. 10.26636/jtit.2010.1.1058
- By:
- Publication type:
- Article
Charging Phenomena at the Interface Between High-k Dielectrics and SiO<sub>x</sub> Interlayers.
- Published in:
- Journal of Telecommunications & Information Technology, 2010, v. 2010, n. 1, p. 10, doi. 10.26636/jtit.2010.1.1023
- By:
- Publication type:
- Article
Preface.
- Published in:
- Journal of Telecommunications & Information Technology, 2010, v. 2010, n. 1, p. 10
- By:
- Publication type:
- Article