Works matching IS 15094553 AND DT 2009 AND VI 2009 AND IP 4
Results: 20
Recommendations and Regulations of the European Commission Regarding the Pan-European eCall.
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- Journal of Telecommunications & Information Technology, 2009, v. 2009, n. 4, p. 138, doi. 10.26636/jtit.2009.4.1008
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Trends in Use of RF Spectrum.
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- Journal of Telecommunications & Information Technology, 2009, v. 2009, n. 4, p. 95, doi. 10.26636/jtit.2009.4.991
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The Influence of Meteorological Phenomena on Modern Satellite Systems.
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- Journal of Telecommunications & Information Technology, 2009, v. 2009, n. 4, p. 88, doi. 10.26636/jtit.2009.4.987
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Lateral Force Calibration Method Used for Calibration of Atomic Force Microscope.
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- Journal of Telecommunications & Information Technology, 2009, v. 2009, n. 4, p. 83, doi. 10.26636/jtit.2009.4.985
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LPT and SLPT Measurement Methods of Flat-Band Voltage (V<sub>FB</sub>) in MOS Devices.
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- Journal of Telecommunications & Information Technology, 2009, v. 2009, n. 4, p. 76, doi. 10.26636/jtit.2009.4.982
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- Article
Si-Based Electrodes for Potentiometric Measurements of Aqueous Solutions.
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- Journal of Telecommunications & Information Technology, 2009, v. 2009, n. 4, p. 71, doi. 10.26636/jtit.2009.4.976
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- Article
Modeling, Simulation and Calibration of Silicon Wet Etching.
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- Journal of Telecommunications & Information Technology, 2009, v. 2009, n. 4, p. 65, doi. 10.26636/jtit.2009.4.974
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Technology of MISFET with SiO<sub>2</sub>/BaTiO<sub>3</sub> System as a Gate Insulator.
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- Journal of Telecommunications & Information Technology, 2009, v. 2009, n. 4, p. 61, doi. 10.26636/jtit.2009.4.972
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- Article
Rare Earth Silicate Formation: A Route Towards High-k for the 22 nm Node and Beyond.
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- Journal of Telecommunications & Information Technology, 2009, v. 2009, n. 4, p. 51
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- Article
Analysis of the Dispersion of Electrical Parameters and Characteristics of FinFET Devices.
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- Journal of Telecommunications & Information Technology, 2009, v. 2009, n. 4, p. 45, doi. 10.26636/jtit.2009.4.960
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- Article
Variation Analysis of CMOS Technologies Using Surface-Potential MOSFET Model.
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- Journal of Telecommunications & Information Technology, 2009, v. 2009, n. 4, p. 37, doi. 10.26636/jtit.2009.4.959
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- Article
SOI Technology: An Opportunity for RF Designers?
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- Journal of Telecommunications & Information Technology, 2009, v. 2009, n. 4, p. 3, doi. 10.26636/jtit.2009.4.954
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- Article
Prospects and Development of Vertical Normally-off JFETs in SiC.
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- Journal of Telecommunications & Information Technology, 2009, v. 2009, n. 4, p. 25, doi. 10.26636/jtit.2009.4.958
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- Article
The Impact of Externally Applied Mechanical Stress on Analog and RF Performances of SOI MOSFETs.
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- Journal of Telecommunications & Information Technology, 2009, v. 2009, n. 4, p. 18, doi. 10.26636/jtit.2009.4.957
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- Article
ID-Based Digital Signatures with Security Enhanced Approach.
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- Journal of Telecommunications & Information Technology, 2009, v. 2009, n. 4, p. 146, doi. 10.26636/jtit.2009.4.1010
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- Article
Impact of Signaling System Performance on QoE in Next Generation Networks.
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- Journal of Telecommunications & Information Technology, 2009, v. 2009, n. 4, p. 124, doi. 10.26636/jtit.2009.4.1005
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- Article
A Microscopic Approach for THz Intersubband Challenges.
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- Journal of Telecommunications & Information Technology, 2009, v. 2009, n. 4, p. 118, doi. 10.26636/jtit.2009.4.1002
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- Article
Mathematical Foundations of Cognitive Radios.
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- Journal of Telecommunications & Information Technology, 2009, v. 2009, n. 4, p. 108, doi. 10.26636/jtit.2009.4.998
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- Article
Adaptive Resource Management and Flexible Radios for WiMAX.
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- Journal of Telecommunications & Information Technology, 2009, v. 2009, n. 4, p. 101, doi. 10.26636/jtit.2009.4.996
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- Article
Preface.
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- Journal of Telecommunications & Information Technology, 2009, v. 2009, n. 4, p. 1
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- Article