Works matching IS 14381656 AND DT 2009 AND VI 11 AND IP 4
Results: 18
Reliability Aspects of Microsystems for Automotive Applications.
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- Advanced Engineering Materials, 2009, v. 11, n. 4, p. 316, doi. 10.1002/adem.200800290
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- Article
Dislocations as Active Components in Novel Silicon Devices.
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- Advanced Engineering Materials, 2009, v. 11, n. 4, p. 249, doi. 10.1002/adem.200800283
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- Article
Nonvolatile Memory Concepts Based on Resistive Switching in Inorganic Materials.
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- Advanced Engineering Materials, 2009, v. 11, n. 4, p. 235, doi. 10.1002/adem.200800294
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- Article
New Materials in Memory Development Sub 50 nm: Trends in Flash and DRAM.
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- Advanced Engineering Materials, 2009, v. 11, n. 4, p. 241, doi. 10.1002/adem.200800298
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- Article
Advanced Experimental and Simulation Approaches to Meet Reliability Challenges of New Electronics Systems.
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- Advanced Engineering Materials, 2009, v. 11, n. 4, p. 309, doi. 10.1002/adem.200800330
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- Article
Atomic Layer Deposition of High- k Oxides of the Group 4 Metals for Memory Applications.
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- Advanced Engineering Materials, 2009, v. 11, n. 4, p. 223, doi. 10.1002/adem.200800316
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- Article
C<sub>60</sub> Nanostructures for Applications in Information Technology.
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- Advanced Engineering Materials, 2009, v. 11, n. 4, p. 278, doi. 10.1002/adem.200800293
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- Article
Interface Reactions in Ultrathin Functional Dielectric Films.
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- Advanced Engineering Materials, 2009, v. 11, n. 4, p. 269, doi. 10.1002/adem.200800297
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- Article
Conductance Enhancement Mechanisms of Printable Nanoparticulate Indium Tin Oxide (ITO) Layers for Application in Organic Electronic Devices.
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- Advanced Engineering Materials, 2009, v. 11, n. 4, p. 295, doi. 10.1002/adem.200800292
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- Article
In-Situ Studies of ALD Growth of Hafnium Oxide Films.
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- Advanced Engineering Materials, 2009, v. 11, n. 4, p. 265, doi. 10.1002/adem.200800348
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- Article
Contents: (Adv. Eng. Mater. 4/2009).
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- Advanced Engineering Materials, 2009, v. 11, n. 4, p. 217, doi. 10.1002/adem.200990009
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- Article
Perovskite BaHfO<sub>3</sub> Dielectric Layers for Dynamic Random Access Memory Storage Capacitor Applications.
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- Advanced Engineering Materials, 2009, v. 11, n. 4, p. 259, doi. 10.1002/adem.200800296
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- Article
Atomic Layer Deposition of High- k Oxides of the Group 4 Metals for Memory Applications (Adv. Eng. Mater. 4/2009).
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- Advanced Engineering Materials, 2009, v. 11, n. 4, p. n/a, doi. 10.1002/adem.200990008
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- Article
Editorial.
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- Advanced Engineering Materials, 2009, v. 11, n. 4, p. 215, doi. 10.1002/adem.200900004
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- Article
The Role of Strain in New Semiconductor Devices.
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- Advanced Engineering Materials, 2009, v. 11, n. 4, p. 275, doi. 10.1002/adem.200800343
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- Article
Energy Level Alignment and Interactions at Potential Contacts for Spin Injection into Organic Semiconductors.
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- Advanced Engineering Materials, 2009, v. 11, n. 4, p. 285, doi. 10.1002/adem.200800240
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- Article
High-Reliability Connection Products for Packaging Technology in Microelectronics.
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- Advanced Engineering Materials, 2009, v. 11, n. 4, p. 302, doi. 10.1002/adem.200800336
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- Publication type:
- Article
Dewetting of an Organic Semiconductor Thin Film Observed in Real-time.
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- Advanced Engineering Materials, 2009, v. 11, n. 4, p. 291, doi. 10.1002/adem.200800289
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- Article