Works matching IS 14381656 AND DT 2002 AND VI 4 AND IP 8
Results: 28
Dependence of the Strains and Residual Mechanical Stresses on the Performances Presented by a-Si:H Thin Film Position Sensors.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 612, doi. 10.1002/1527-2648(20020806)4:8<612::AID-ADEM612>3.0.CO;2-U
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Stress Effects in Laser-Pulsed Chromium Films Tracked by Nanosecond Transmission Electron Microscopy.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 623, doi. 10.1002/1527-2648(20020806)4:8<623::AID-ADEM623>3.0.CO;2-M
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Application of Positron Annihilation Lifetime Technique for γ-Irradiation Stresses Study in Chalcogenide Vitreous Semiconductors.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 571, doi. 10.1002/1527-2648(20020806)4:8<571::AID-ADEM571>3.0.CO;2-E
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Influence of Annealing Treatment on the Physical Properties of c-BN Films Deposited by IBAD Technique.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 616, doi. 10.1002/1527-2648(20020806)4:8<616::AID-ADEM616>3.0.CO;2-E
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Contents: Adv. Eng. Mater. 8/2002.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 524, doi. 10.1002/1527-2648(20020806)4:8<524::AID-ADEM524>3.0.CO;2-M
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Analysis of Strain and Stress in Ceramic, Polymer and Metal Matrix Composites by Raman Spectroscopy.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 535, doi. 10.1002/1527-2648(20020806)4:8<535::AID-ADEM535>3.0.CO;2-E
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Electronic Speckle Pattern Interferometry for Micromechanical Measurements.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 546, doi. 10.1002/1527-2648(20020806)4:8<546::AID-ADEM546>3.0.CO;2-6
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Stresses in Multilayer Systems: Test of the sin<sup>2</sup>Ψ Method.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 557, doi. 10.1002/1527-2648(20020806)4:8<557::AID-ADEM557>3.0.CO;2-Z
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Electrical and Structural Properties of Oxygen-Containing Silicon Annealed at 670-720 K Under High Stress.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 600, doi. 10.1002/1527-2648(20020806)4:8<600::AID-ADEM600>3.0.CO;2-5
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Elastic Deformations in Thin Freestanding Ferroelectric Films.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 604, doi. 10.1002/1527-2648(20020806)4:8<604::AID-ADEM604>3.0.CO;2-Q
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Residual Stress in Copper Containing a High Concentration of Krypton Precipitates.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 592, doi. 10.1002/1527-2648(20020806)4:8<592::AID-ADEM592>3.0.CO;2-2
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Spectroscopic Signatures of the Alloy-Alloy Interface in InGaAs-GaAs(001) Stepped Quantum Wells: a Frequency- and Time-Resolved Study.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 574, doi. 10.1002/1527-2648(20020806)4:8<574::AID-ADEM574>3.0.CO;2-2
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Stiffness Constants and Strain Energy Densities of fcc and bcc Cubic Overlayers.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 619, doi. 10.1002/1527-2648(20020806)4:8<619::AID-ADEM619>3.0.CO;2-2
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Stress Imposing During Microcrystals Characterization at Cryogenic Temperatures.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 589, doi. 10.1002/1527-2648(20020806)4:8<589::AID-ADEM589>3.0.CO;2-F
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Influence of the Strain on the Electrical Resistance of Zinc Oxide Doped Thin Film Deposited on Polymer Substrates.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 610, doi. 10.1002/1527-2648(20020806)4:8<610::AID-ADEM610>3.0.CO;2-1
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Many-Body Ab Initio Potentials in Simulations of Grain Boundary Sliding and Decohesion in Metals.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 580, doi. 10.1002/1527-2648(20020806)4:8<580::AID-ADEM580>3.0.CO;2-E
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Determination of Deformation Induced by Thin Film Residual Stress in Structures of Millimeter Size.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 625, doi. 10.1002/1527-2648(20020806)4:8<625::AID-ADEM625>3.0.CO;2-E
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Influence of Annealing on the Residual Stress in Sputter-Deposited Platinum Films.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 607, doi. 10.1002/1527-2648(20020806)4:8<607::AID-ADEM607>3.0.CO;2-E
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Analysis of Resistance to Thermal Stress in Ceramic Oxide Nuclear Materials.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 584, doi. 10.1002/1527-2648(20020806)4:8<584::AID-ADEM584>3.0.CO;2-Z
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The Influence of Strain on Point Defect Dynamics.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 629, doi. 10.1002/1527-2648(20020806)4:8<629::AID-ADEM629>3.0.CO;2-Z
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Elastic Anisotropy Effect on the Stability of a Subgrain Boundary Defect in a C16 Crystal.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 595, doi. 10.1002/1527-2648(20020806)4:8<595::AID-ADEM595>3.0.CO;2-R
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Investigations of a New Nanostructured Si-Material by Spectral Response and Electron Paramagnetic Resonance.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 577, doi. 10.1002/1527-2648(20020806)4:8<577::AID-ADEM577>3.0.CO;2-R
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In-situ Stress Monitoring with a Laser-Fibre System.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 550, doi. 10.1002/1527-2648(20020806)4:8<550::AID-ADEM550>3.0.CO;2-Q
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Estimation of Biaxial Residual Stress in Welded Steel Tubes by Barkhausen Noise Measurements.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 561, doi. 10.1002/1527-2648(20020806)4:8<561::AID-ADEM561>3.0.CO;2-I
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Raman Mapping Devoted to the Phase Transformation and Strain Analysis in Si Micro-Indentation.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 543, doi. 10.1002/1527-2648(20020806)4:8<543::AID-ADEM543>3.0.CO;2-I
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X-ray Diffraction Study of Thin Film Elastic Properties.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 554, doi. 10.1002/1527-2648(20020806)4:8<554::AID-ADEM554>3.0.CO;2-A
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Modelling of Residual Stress Development in Electronic Materials and Devices.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 565, doi. 10.1002/1527-2648(20020806)4:8<565::AID-ADEM565>3.0.CO;2-2
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Spin-Dependent Recombination in Strained Si Under Fields of 1-30 MHz Range.
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- Advanced Engineering Materials, 2002, v. 4, n. 8, p. 598, doi. 10.1002/1527-2648(20020806)4:8<598::AID-ADEM598>3.0.CO;2-F
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