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WiMAX class AB and class E power amplifier design using equivalent capacitance concept.
- Published in:
- International Journal of RF & Microwave Computer-Aided Engineering, 2008, v. 18, n. 6, p. 543, doi. 10.1002/mmce.20330
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- Article
From device characterization to system level analysis of dual band PA design in SiGe technology.
- Published in:
- International Journal of RF & Microwave Computer-Aided Engineering, 2008, v. 18, n. 6, p. 552, doi. 10.1002/mmce.20331
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- Article
Design approach to improve linearity and power performance of microwave FETs.
- Published in:
- International Journal of RF & Microwave Computer-Aided Engineering, 2008, v. 18, n. 6, p. 527, doi. 10.1002/mmce.20328
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- Article
Special issue on microwave power amplifier modeling, design, and system aspects.
- Published in:
- International Journal of RF & Microwave Computer-Aided Engineering, 2008, v. 18, n. 6, p. 505, doi. 10.1002/mmce.20325
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- Publication type:
- Article
Dynamic biasing in SiGe HBT for wideband step envelope tracking power amplifiers.
- Published in:
- International Journal of RF & Microwave Computer-Aided Engineering, 2008, v. 18, n. 6, p. 564, doi. 10.1002/mmce.20332
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- Publication type:
- Article
Nonquasi-static large-signal model of GaN FETs through an equivalent voltage approach.
- Published in:
- International Journal of RF & Microwave Computer-Aided Engineering, 2008, v. 18, n. 6, p. 507, doi. 10.1002/mmce.20326
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- Publication type:
- Article
Study of the influence of bias and matching networks on the distortion and memory of FET-based power amplifiers.
- Published in:
- International Journal of RF & Microwave Computer-Aided Engineering, 2008, v. 18, n. 6, p. 517, doi. 10.1002/mmce.20327
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- Publication type:
- Article
An active load-pull setup for broadband signals using digital baseband processing for the active loop.
- Published in:
- International Journal of RF & Microwave Computer-Aided Engineering, 2008, v. 18, n. 6, p. 574, doi. 10.1002/mmce.20333
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- Publication type:
- Article
Wide-band hybrid power amplifier design using GaN FETs.
- Published in:
- International Journal of RF & Microwave Computer-Aided Engineering, 2008, v. 18, n. 6, p. 536, doi. 10.1002/mmce.20329
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- Publication type:
- Article